Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW55NM60N

Name: STW55NM60N
Brand: STMicroelectronics
SKU: STW55NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STW55NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW55NM60N.pdf

Description:: MOSFET N-CH 600V 51A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,148

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STW55NM60N from STMicroelectronics is an N-channel 600 V, 51 A, 0.047 Ω R_DS(on) MDmesh™ II Power MOSFET in TO-247 package, designed for high-efficiency switching converters operating at high voltage and moderate current. It delivers low gate charge (190 nC), low input capacitance (5800 pF), and 100% avalanche tested ruggedness for reliable operation in hard-switched PFC and SMPS primary-side applications.

For engineers reviewing the STW55NM60N datasheet, STW55NM60N pinout, STW55NM60N application, or STW55NM60N equivalent, key selection criteria include its 600 V V_DSS, 0.047 Ω R_DS(on) @ 10 V, 190 nC total gate charge, 150 °C max junction temperature, and TO-247 thermal performance with 0.36 °C/W R_thj-case.

Technical Context

This MDmesh™ II device uses a proprietary vertical structure combined with strip layout to minimize conduction and switching losses simultaneously. Its 600 V breakdown voltage (V_(BR)DSS ≥ 600 V) and 150 °C T_j rating support continuous operation in industrial AC-DC front-ends and resonant LLC converters.

The MOSFET features fast switching dynamics (t_d(on) = 40 ns, t_f = 70 ns with R_G = 4.7 Ω) and optimized body diode recovery (t_rr = 600 ns, Q_rr = 15 µC at T_j = 25 °C), enabling reduced snubber losses and EMI in high-frequency topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports 400 VAC rectified bus with 50% safety margin for surge immunity
R_DS(on) max	0.060 Ω @ 10 V - enables <1.5 W conduction loss at 51 A DC, critical for thermal management
Q_g	190 nC - determines gate driver power requirement and switching speed trade-off
C_iss	5800 pF - impacts Miller effect and gate drive stability in high-dv/dt environments
E_AS	1600 mJ - quantifies unclamped inductive switching robustness without external snubbers
R_thj-case	0.36 °C/W - allows 350 W dissipation at 25 °C case temperature, defining heatsink sizing

Pinout & Package

TO-247 package: 3-terminal through-hole metal-can housing with isolated tab (drain-connected), optimized for high-power thermal transfer and mechanical robustness in industrial power modules.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-inductance connection point for source loop minimization in high-di/dt layouts
2 (Gate)	Control terminal for channel modulation	High-impedance input requiring low-ESR gate resistor to suppress ringing during fast transitions
3 (Drain)	Main high-voltage power terminal	Internally connected to metal tab - must be electrically isolated from heatsink unless referenced to system ground

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 1600 mJ, eliminating need for overvoltage clamping in flyback/LLC designs
Low gate charge (190 nC)	Reduces gate driver power loss and enables higher PWM frequencies without excessive driver heating
Low R_DS(on) (0.047 Ω typ)	Minimizes I²R conduction loss in 50–100 kHz PFC stages, improving full-load efficiency by >0.5%
MDmesh™ II vertical structure	Delivers best-in-class R_DS(on) × Q_g figure-of-merit (2.8 Ω·nC) for 600 V class devices

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: Primary-side switch in 1–3 kW active PFC boost stages operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch controlling energy transfer into boost inductor.

Use Value: 0.047 Ω R_DS(on) reduces conduction loss by ~30% vs legacy 600 V MOSFETs, enabling 96%+ efficiency at full load.

Use Scenario: Main switch in telecom rectifier half-bridge output stage handling 48 V/50 A output.

IC Role / Device Role / Timing Role: Synchronous rectification switch replacing Schottky diodes in secondary-side LLC resonant converters.

Use Value: Low Q_rr (15 µC) and fast t_rr (600 ns) minimize reverse recovery loss and EMI generation during zero-voltage switching transitions.

Solar Microinverters

Motor Drive Inverters

Use Scenario: DC-AC H-bridge switch in single-phase microinverter handling 250–450 V DC input.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 16–20 kHz SPWM inverter leg.

Use Value: 150 °C T_j rating and 0.36 °C/W R_thj-case allow sustained 51 A operation in compact sealed enclosures without forced air cooling.

Use Scenario: Inverter leg switch in 0.75–2.2 kW HVAC compressor drives operating at 4–8 kHz carrier frequency.

IC Role / Device Role / Timing Role: IGBT replacement in hard-switched three-phase inverter outputs.

Use Value: Avalanche ruggedness (1600 mJ) withstands motor inductive kickback without external protection, reducing BOM count and board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48NM60ND	600 V, 48 A, 0.065 Ω R_DS(on), 160 nC Q_g, DPAK package	Lower current rating and surface-mount packaging limit use to <1.5 kW designs with constrained PCB space	Select when footprint reduction and automated assembly outweigh peak current capability
IPP60R099C6	600 V, 58 A, 0.099 Ω R_DS(on), 110 nC Q_g, TO-220FP package	Higher R_DS(on) increases conduction loss but lower Q_g improves light-load efficiency in variable-speed drives	Select when optimizing for partial-load efficiency and cost-sensitive industrial inverters

Compared with STW48NM60ND and IPP60R099C6, STW55NM60N offers the lowest R_DS(on) × Q_g FoM among 600 V TO-247 MOSFETs, making it optimal for high-current, high-efficiency primary-side switching where thermal headroom is limited.

Availability

STW55NM60N is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and solar microinverters requiring stable component supply and long-term production continuity.

Supply support for STW55NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and automotive ICs with manufacturing across Europe and Asia.

This device belongs to ST's MDmesh™ II high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching converters in industrial and renewable energy systems.

FAQ

Is STW55NM60N suitable for synchronous rectification in LLC resonant converters?

Yes. Its low Q_rr (15 µC), fast t_rr (600 ns), and low R_DS(on) (0.047 Ω) enable efficient synchronous rectification in secondary-side LLC converters up to 300 kHz. The body diode's soft recovery characteristic reduces EMI and eliminates need for external snubbers in ZVS operation.

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current is 32 A at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits under real-world heatsink conditions and must be used for safe SOA design-not the 51 A rating at 25 °C.

Does STW55NM60N have lead-free packaging compliant with RoHS?

Yes. It is supplied in an ECOPACK®-compliant TO-247 package with lead-free second-level interconnect, meeting JEDEC JESD97 standards. The inner box label indicates the lead-free status, and soldering profiles follow standard Pb-free reflow guidelines.

Can STW55NM60N replace older STW55NF60 in existing designs?

No. STW55NF60 is a first-generation MDmesh™ device with higher R_DS(on) (0.065 Ω) and Q_g (220 nC). While pin-compatible, STW55NM60N's improved parameters require gate driver recalibration and layout review to manage faster switching edges and reduced Miller plateau time.

STW55NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 51A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 25.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 190 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 5800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 350W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW55NM60N FAQ

1.How can I place an order for STW55NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STW55NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW55NM60N reliable?

The price and inventory of STW55NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW55NM60N is usually 5 days.

3.What payment methods are accepted for STW55NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW55NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW55NM60N?

STW55NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW55NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW55NM60N?

For technical support, including STW55NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW55NM60N requirements.

6.How does Aetrix verify that STW55NM60N is sourced from the original manufacturer or authorized distributors?

All STW55NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW55NM60N meets industry standards.

7.What is the process for return or replacement of STW55NM60N?

All STW55NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STW55NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW55NM60N part is unused and in its original packaging.

Return procedure for STW55NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…