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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW55NM60ND

Name: STW55NM60ND
Brand: STMicroelectronics
SKU: STW55NM60ND
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW55NM60ND

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW55NM60ND.pdf

Description:: MOSFET N-CH 600V 51A TO247-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,647

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Product details

Overview

STW55NM60ND from STMicroelectronics is a 600 V, 55 A N-channel SuperMESH™ III power MOSFET in TO-247 package, featuring 0.065 Ω R_DS(on) max at V_GS = 10 V, 100% avalanche-rated capability, and optimized for high-efficiency switch-mode power supplies and motor drives. It operates with gate threshold voltage of 2–4 V and supports continuous drain current up to 55 A at T_c = 25 °C.

For engineers reviewing the STW55NM60ND datasheet, STW55NM60ND pinout, STW55NM60ND application, or STW55NM60ND equivalent, key selection criteria include breakdown voltage rating, conduction loss at operating temperature, avalanche ruggedness, gate charge (Q_g = 120 nC), and thermal resistance (R_thJC = 0.45 °C/W).

Technical Context

This device employs ST's SuperMESH™ III process to achieve low on-resistance while maintaining high voltage blocking and robust avalanche performance. Its planar stripe gate structure ensures stable switching behavior and reduced gate oscillation under hard-switching conditions.

The MOSFET is designed for unclamped inductive switching (UIS) applications requiring repetitive avalanche energy handling up to 950 mJ at T_c = 25 °C. It features a fast intrinsic body diode with reverse recovery time (t_rr) of 180 ns and peak reverse recovery di/dt of 100 A/µs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports primary-side switching in offline SMPS up to 400 V DC bus with margin
R_DS(on) max	0.065 Ω @ V_GS = 10 V - enables <1.8 W conduction loss at 55 A, reducing heatsink requirements
I_D continuous	55 A @ T_c = 25 °C - suitable for medium-power industrial inverters and UPS systems
Q_g	120 nC - determines gate drive power and switching speed in hard-switched topologies
E_AS	950 mJ @ T_c = 25 °C - guarantees reliable operation during inductive load turn-off transients
R_thJC	0.45 °C/W - allows direct mounting to heatsink for thermal management in high-power designs

Pinout & Package

Supplied in TO-247 package with isolated tab (drain-connected), offering mechanical robustness and high thermal conductivity for high-current power stages.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink
Source	Reference node for gate control and current return	Low-inductance connection critical for minimizing switching noise and shoot-through risk
Gate	Control terminal for channel conduction	Requires 10 V drive for full enhancement; gate resistor selection affects dV/dt and EMI

Key Features

Feature	Design Value
100% Avalanche Tested	Guarantees UIS reliability without derating in flyback or resonant converters
Low Gate Charge (Q_g)	Reduces driver losses and enables higher PWM frequencies in PFC and LLC stages
Fully Characterized Body Diode	t_rr = 180 ns enables use in synchronous rectification and freewheeling without external diode
Enhanced dv/dt Ruggedness	Withstands >4.5 V/ns transient stress - improves immunity in noisy industrial environments

Applications

Industrial Motor Drives

Server & Telecom SMPS

Use Scenario: Three-phase inverter stage in 3–7.5 kW variable frequency drives for pumps and fans.

IC Role / Device Role / Timing Role: High-side/low-side switching element in IGBT/MOSFET half-bridge modules.

Use Value: Low R_DS(on) and avalanche rating reduce thermal stress during overload and braking events.

Use Scenario: Primary-side switch in 1–3 kW server PSUs using active clamp forward or LLC topology.

IC Role / Device Role / Timing Role: Main power switch handling 400 V DC input with high-frequency PWM control.

Use Value: Optimized Q_g/R_DS(on) ratio improves efficiency at 100–300 kHz switching, lowering cooling cost.

Uninterruptible Power Supplies

Induction Heating Systems

Use Scenario: Inverter bridge in online double-conversion UPS delivering clean 230 V AC output.

IC Role / Device Role / Timing Role: Bidirectional switching device in H-bridge configuration for battery backup mode.

Use Value: Repetitive avalanche capability ensures safe operation during short-circuit or overload faults.

Use Scenario: Half-bridge resonant inverter in domestic induction cooktops (2–3.5 kW).

IC Role / Device Role / Timing Role: Fast-switching power switch synchronized with zero-voltage switching (ZVS) control.

Use Value: Fast body diode recovery minimizes switching losses and prevents cross-conduction in ZVS transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R099C7	R_DS(on) = 0.099 Ω, 650 V, TO-220FP package, lower Q_g (72 nC)	Lower power density; limited to ≤30 A continuous due to package thermal limit	Preferred for space-constrained, lower-current (<25 A) designs where gate drive simplicity is prioritized
IXFH50N60P	R_DS(on) = 0.085 Ω, 600 V, TO-247, no avalanche rating specified	Lacks guaranteed UIS performance; requires external snubbers in inductive loads	Suitable for soft-switched or low-dV/dt applications where avalanche stress is absent

Compared with IPP60R099C7 and IXFH50N60P, STW55NM60ND delivers superior conduction efficiency at high current, verified avalanche ruggedness for harsh transients, and TO-247 thermal performance-making it optimal for industrial-grade 50–60 A switch-mode power conversion.

Availability

STW55NM60ND is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, and induction heating systems requiring stable component supply and long-term production continuity.

Supply support for STW55NM60ND includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STW55NM60ND belongs to ST's SuperMESH™ III power MOSFET product line, engineered specifically for high-efficiency, high-reliability hard-switched and resonant power conversion in industrial and telecom infrastructure.

FAQ

What is the maximum junction temperature for continuous operation?

The STW55NM60ND has a rated maximum junction temperature (T_j) of 150 °C. Derating is required above T_c = 25 °C per the thermal resistance curve in the datasheet; at T_c = 100 °C, the maximum continuous drain current drops to approximately 32 A to maintain T_j ≤ 150 °C.

Is the body diode suitable for synchronous rectification?

Yes-the body diode is fully characterized with t_rr = 180 ns and Q_rr = 380 nC, enabling controlled commutation in synchronous rectifier configurations. However, its forward voltage (V_SD ≈ 1.7 V) is higher than Schottky alternatives, so efficiency gains depend on operating frequency and load profile.

Does this MOSFET require a negative gate turn-off voltage?

No-STW55NM60ND is a standard-enhancement-mode N-channel device with V_GS(th) between 2 V and 4 V. A gate drive voltage of 0 V fully turns off the device; negative bias is not required or recommended, though small negative voltages (< −5 V) may be used to improve noise immunity in high-dV/dt environments.

Can STW55NM60ND replace STW55NF60 in existing designs?

Yes-with caution. STW55NM60ND replaces STW55NF60 with improved R_DS(on) (0.065 Ω vs. 0.075 Ω), lower Q_g (120 nC vs. 140 nC), and enhanced avalanche rating. Layout and gate drive must be verified, as faster switching may increase EMI; snubber tuning may be needed in legacy hard-switched circuits.

STW55NM60ND Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: FDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 51A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 25.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 190 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 5800 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 350W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW55NM60ND FAQ

1.How can I place an order for STW55NM60ND through Aetrix?

Please submit a Request for Quotation (RFQ) for STW55NM60ND on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW55NM60ND reliable?

The price and inventory of STW55NM60ND are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW55NM60ND is usually 5 days.

3.What payment methods are accepted for STW55NM60ND?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW55NM60ND transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW55NM60ND?

STW55NM60ND orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW55NM60ND order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW55NM60ND?

For technical support, including STW55NM60ND datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW55NM60ND requirements.

6.How does Aetrix verify that STW55NM60ND is sourced from the original manufacturer or authorized distributors?

All STW55NM60ND products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW55NM60ND meets industry standards.

7.What is the process for return or replacement of STW55NM60ND?

All STW55NM60ND units undergo pre-shipment inspection (PSI). If there is an issue with STW55NM60ND, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW55NM60ND part is unused and in its original packaging.

Return procedure for STW55NM60ND:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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