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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW56N65DM2

Name: STW56N65DM2
Brand: STMicroelectronics
SKU: STW56N65DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW56N65DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW56N65DM2.pdf

Description:: MOSFET N-CH 650V 48A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW56N65DM2 from STMicroelectronics is a high-voltage N-channel MDmesh™ DM2 Power MOSFET in TO-247 package, rated 650 V V_DS, 0.058 Ω typ. R_DS(on), 48 A continuous drain current, and featuring fast-recovery body diode with 135 ns trr at 25 °C. It is engineered for high-efficiency bridge topologies and ZVS phase-shift converters.

For engineers reviewing the STW56N65DM2 datasheet, STW56N65DM2 pinout, STW56N65DM2 application, or STW56N65DM2 equivalent, key selection criteria include avalanche ruggedness (1300 mJ E_AS), low gate charge (88 nC), dv/dt immunity (50 V/ns), and Zener-protected gate reliability in hard-switching SMPS designs.

Technical Context

This MOSFET employs ST's MDmesh™ DM2 silicon technology optimized for high-voltage switching with integrated fast-recovery body diode. Its low Q_rr (0.68 µC typ.) and trr (135 ns) minimize switching losses during commutation, while R_DS(on) of 0.058 Ω at V_GS = 10 V enables high-current conduction with low conduction loss.

The device delivers 360 W total dissipation at T_case = 25 °C and exhibits 0.35 °C/W junction-to-case thermal resistance. Its 50 V/ns dv/dt ruggedness and 100% avalanche testing ensure robust operation under transient overvoltage and inductive turn-off stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports primary-side switching in 400 V DC bus and 3-phase rectified systems
R_DS(on) max	0.065 Ω - limits conduction loss to ≤150 W at 48 A, enabling compact heatsink design
Q_g	88 nC - reduces gate drive power requirement and enables use with standard 1–2 A gate drivers
trr	135 ns @ 25 °C - minimizes reverse recovery loss in LLC and phase-shifted full-bridge topologies
E_AS	1300 mJ - withstands unclamped inductive switching events without failure in flyback or PFC stages
dv/dt ruggedness	50 V/ns - prevents spurious turn-on during high-slew-rate voltage transients in high-frequency converters
R_thj-case	0.35 °C/W - allows junction temperature rise of only 126 °C at 360 W dissipation, supporting 150 °C T_j operation

Pinout & Package

STW56N65DM2 uses the industry-standard TO-247 package with three terminals: Drain (pin 2), Source (pin 1), and Gate (pin 3). The metal tab is electrically connected to the Drain terminal and serves as the primary heat path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path and reference node for gate drive	Low-inductance connection point for source loop; ties directly to PCB ground plane or source rail
Pin 2 (Drain)	Main high-voltage power output node	Connected to metal tab; requires isolation from heatsink unless heatsink is referenced to high-voltage rail
Pin 3 (Gate)	Control input for channel conduction	High-impedance node sensitive to noise; requires local RC snubber and tight layout to suppress ringing

Key Features

Feature	Design Value
MDmesh™ DM2 silicon architecture	Combines ultra-low R_DS(on) and fast-recovery diode in single die-enables >98% efficiency in 100 kHz+ resonant converters
Zener-protected gate oxide	Withstands ±25 V gate-source voltage without degradation-eliminates need for external gate Zener clamping
100% avalanche tested	Guarantees single-pulse avalanche capability up to 1300 mJ-validates robustness in real-world overvoltage faults
Extremely low C_iss (4100 pF)	Reduces Miller effect and gate drive energy-supports clean switching at 500 kHz with minimal driver stress
High dv/dt immunity (50 V/ns)	Prevents false triggering during rapid voltage transitions in half-bridge leg cross-conduction scenarios

Applications

Industrial SMPS

Server & Telecom PSU

Use Scenario: 3 kW active clamp forward converter operating at 200 kHz with 400 V DC input.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 48 A peak current and 650 V blocking.

Use Value: Low Q_rr (0.68 µC) and trr (135 ns) reduce diode recovery loss by 40% vs. standard superjunction MOSFETs.

Use Scenario: 1U 2 kW redundant power supply using interleaved PFC + LLC resonant stage.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacement in LLC half-bridge output stage.

Use Value: Fast body diode enables zero-voltage switching during dead-time, improving light-load efficiency by 1.2%.

EV Onboard Charger

Renewable Energy Inverter

Use Scenario: Bidirectional AC/DC stage in 6.6 kW OBC with SiC-compatible gate drive.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge topology managing 48 A RMS current at 100 kHz.

Use Value: 50 V/ns dv/dt rating ensures stable operation despite fast SiC gate driver edge rates and layout parasitics.

Use Scenario: Three-phase string inverter DC link switching stage with 1000 V PV array input.

IC Role / Device Role / Timing Role: DC bus switch in boost pre-regulator handling 48 A continuous current at 650 V blocking.

Use Value: 1300 mJ E_AS withstands lightning-induced surges and grid fault transients without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH50N65X2	R_DS(on) = 0.065 Ω, Q_g = 72 nC, trr = 110 ns, no Zener gate protection	Lower gate charge improves high-frequency drive efficiency but lacks gate overvoltage protection	Select when gate drive is tightly regulated and layout minimizes overshoot; avoid in noisy industrial environments
IPP65R099C7	R_DS(on) = 0.099 Ω, Q_g = 62 nC, trr = 140 ns, integrated gate resistor	Higher R_DS(on) increases conduction loss; integrated resistor simplifies gate layout but limits drive flexibility	Prefer for cost-sensitive 1–2 kW designs where thermal margin allows higher on-resistance

Compared with IXFH50N65X2 and IPP65R099C7, STW56N65DM2 uniquely balances low R_DS(on), fast trr, and Zener gate protection-making it optimal for ruggedized 3–5 kW industrial SMPS where reliability under transient stress is critical.

Availability

STW56N65DM2 is available at Aetrix Electronics and suitable for industrial SMPS, server & telecom power supplies, EV onboard chargers, and renewable energy inverters requiring stable component supply and long-term production continuity.

Supply support for STW56N65DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STW56N65DM2 belongs to the MDmesh™ DM2 series-a family of high-voltage superjunction MOSFETs specifically developed for high-efficiency, high-frequency switched-mode power supplies and resonant converters.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW56N65DM2 supports 30 A continuous drain current at T_case = 100 °C, as specified in Table 2 of the official datasheet (DocID027142 Rev 2). This derating reflects thermal limitations of the TO-247 package and ensures safe operation within SOA boundaries under sustained load conditions.

Does STW56N65DM2 have an integrated body diode, and what are its key recovery parameters?

Yes, STW56N65DM2 integrates a fast-recovery body diode with trr = 135 ns and Q_rr = 0.68 µC at T_j = 25 °C, ISD = 48 A, di/dt = 100 A/µs, and VDD = 100 V. These values are measured per Figure 16 test circuit and enable efficient operation in hard- and soft-switching topologies without external diode supplementation.

Is STW56N65DM2 RoHS-compliant and halogen-free?

Yes, STW56N65DM2 is manufactured in ECOPACK®-compliant TO-247 packaging, meeting RoHS Directive 2011/65/EU and halogen-free requirements per IEC 61249-2-21. Full compliance documentation, including material declarations and test reports, is available via ST's official product page and ECOPACK® portal.

Can STW56N65DM2 be used in parallel configurations, and what layout considerations apply?

Yes, STW56N65DM2 supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. Critical layout practices include matched gate trace lengths with individual 10 Ω gate resistors, symmetrical source connections to minimize loop inductance, and uniform heatsinking to maintain ΔT_j < 5 °C between devices.

STW56N65DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 4100 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 360W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW56N65DM2 FAQ

1.How can I place an order for STW56N65DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW56N65DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW56N65DM2 reliable?

The price and inventory of STW56N65DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW56N65DM2 is usually 5 days.

3.What payment methods are accepted for STW56N65DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW56N65DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW56N65DM2?

STW56N65DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW56N65DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW56N65DM2?

For technical support, including STW56N65DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW56N65DM2 requirements.

6.How does Aetrix verify that STW56N65DM2 is sourced from the original manufacturer or authorized distributors?

All STW56N65DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW56N65DM2 meets industry standards.

7.What is the process for return or replacement of STW56N65DM2?

All STW56N65DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STW56N65DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW56N65DM2 part is unused and in its original packaging.

Return procedure for STW56N65DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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