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STMicroelectronics STW56N65M2

Part No.:
STW56N65M2
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixSTW56N65M2.pdf
Description:
MOSFET N-CH 650V 49A TO247
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:114

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Product details

Overview

STW56N65M2 from STMicroelectronics is an N-channel 650 V, 49 A MDmesh M2 Power MOSFET in TO-247 package with 49 mΩ typical RDS(on), 93 nC total gate charge, and 150 °C maximum junction temperature. It delivers low conduction loss and optimized switching performance for high-efficiency hard-switched and resonant converters in industrial SMPS and solar inverters.

For engineers reviewing the STW56N65M2 datasheet, STW56N65M2 pinout, STW56N65M2 application, or STW56N65M2 equivalent, key selection criteria include avalanche ruggedness (1.3 J EAS), Coss profile (160 pF at 100 V), dv/dt immunity (50 V/ns), and Zener-protected gate reliability under transient stress.

Technical Context

This MOSFET employs ST's MDmesh M2 strip layout and enhanced vertical structure to simultaneously reduce RDS(on) and output capacitance while maintaining robust avalanche capability. Its 838 pF Coss,eq (0–520 V) enables predictable energy storage during turn-off transitions in high-voltage clamped topologies.

The device integrates a Zener-protected gate oxide and passes 100% unclamped inductive switching (UIS) testing at IAR = 3.5 A. Its diode exhibits 554 ns trr and 13.5 µC Qrr at 25 °C, supporting moderate-frequency synchronous rectification where reverse recovery control is critical.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 650 V - Supports 400 V DC bus designs with ≥30 % voltage margin for surge and ringing.
RDS(on) typ. 49 mΩ at VGS = 10 V, ID = 24.5 A - Enables <1.2 W conduction loss at 25 A continuous drain current.
Qg 93 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers.
Coss,eq 838 pF (0–520 V) - Defines stored energy (E = ½·C·V² ≈ 115 µJ at 520 V), critical for snubberless ZVS design.
EAS 1.3 J (single-pulse, TJ = 25 °C) - Validates safe operation under worst-case inductive turn-off without external clamping.
tr/tf 27.5 ns / 13 ns - Supports >200 kHz switching in LLC and phase-shifted full-bridge topologies with low switching loss.
TJ max 150 °C - Allows derated operation up to 31 A continuous current at TC = 100 °C per SOA curve.

Pinout & Package

TO-247 package with isolated tab (drain-connected), 3-terminal configuration. Case-to-drain thermal path enables direct heatsink mounting with electrical isolation.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Control terminal; requires 10 V drive for full enhancement; Zener-protected against ±25 V transients.
2 (D, Tab) Drain (Metal Tab) Main high-side power terminal; electrically connected to package tab; must be insulated from heatsink unless referenced to system ground.
3 (S) Source Power return and gate reference node; defines local ground for gate driver; carries full load current and diode reverse recovery charge.

Key Features

Feature Design Value
MDmesh M2 technology Combines trench-assisted charge compensation with strip layout to achieve 49 mΩ/650 V - 22 % lower RDS(on) than prior-generation MDmesh devices.
Optimized Coss profile Coss = 160 pF at 100 V and Coss,eq = 838 pF over 0–520 V - Enables stable soft-switching behavior across wide input voltage range.
100 % avalanche tested Each unit validated for single-pulse UIS at IAR = 3.5 A and EAS = 1.3 J - Eliminates need for external avalanche protection in flyback and forward converters.
Zener-protected gate Integrated gate oxide Zener clamp limits VGS to ±25 V - Prevents gate oxide rupture during fast dv/dt events or layout-induced coupling.

Applications

Industrial Switch-Mode Power Supplies Solar DC-AC Inverters

Use Scenario: Primary-side switch in 3–5 kW telecom rectifiers and server PSUs operating at 100–200 kHz.

IC Role / Device Role / Timing Role: High-voltage hard-switched power switch handling 400 V DC input with tight duty-cycle control.

Use Value: 49 mΩ RDS(on) reduces conduction loss by ~1.5 W vs. comparable 62 mΩ parts, improving full-load efficiency by 0.4 %.

Use Scenario: DC-link switching stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: High-reliability 650 V switch in three-level NPC or T-type inverter legs.

Use Value: 50 V/ns dv/dt ruggedness ensures stable operation during fast grid fault transients without spurious turn-on.

Induction Heating Systems EV On-Board Chargers

Use Scenario: Half-bridge resonant switch in 3–8 kW domestic and commercial induction cooktops.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) power switch operating at 20–100 kHz with high di/dt stress.

Use Value: Low Qgd/Qg ratio (40/93 ≈ 0.43) improves ZVS margin and reduces dead-time sensitivity.

Use Scenario: Active clamp flyback or LLC primary switch in 3.3–6.6 kW bidirectional OBCs.

IC Role / Device Role / Timing Role: High-reliability 650 V switch managing bidirectional power flow and regenerative braking energy.

Use Value: 1.3 J EAS withstands repeated unclamped inductive spikes during AC/DC mode transitions without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXTH50N65X2 RDS(on) = 52 mΩ, Qg = 72 nC, Coss = 125 pF - Lower gate charge but higher on-resistance and no integrated Zener protection. Better suited for ultra-high-frequency (>500 kHz) resonant converters where gate drive loss dominates. Select when prioritizing switching speed over conduction loss and when external gate protection is acceptable.
IPP65R120CFD7 RDS(on) = 120 mΩ, Qg = 42 nC, Coss,eq = 420 pF - Higher RDS(on) but superior Coss linearity and co-packaged ultra-fast diode (trr = 35 ns). Preferred for PFC boost stages requiring low Qrr and minimal diode reverse recovery loss. Select for boost PFC or interleaved topologies where diode performance outweighs RDS(on) penalty.

Compared with IXTH50N65X2 and IPP65R120CFD7, STW56N65M2 offers the best balance of low RDS(on), robust avalanche rating, and integrated gate protection - making it optimal for cost-sensitive, high-reliability 650 V hard-switched industrial power stages.

Availability

STW56N65M2 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, solar DC-AC inverters, and EV on-board chargers requiring stable component supply and long-term production continuity.

Supply support for STW56N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STW56N65M2 belongs to the MDmesh M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability 600–650 V power conversion in industrial SMPS, UPS, and renewable energy systems.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STW56N65M2 supports 31 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS10775 Rev 2. This value is derived from SOA limitations and thermal resistance (RthJC = 0.35 °C/W), not ambient-rated derating. Operation above this current requires active cooling or pulse-width limitation.

Does STW56N65M2 include an integrated body diode, and what are its key recovery parameters?

Yes, STW56N65M2 features a monolithic source-drain diode with trr = 554 ns and Qrr = 13.5 µC at TJ = 25 °C, ISD = 49 A, and di/dt = 100 A/µs. At 150 °C, trr increases to 688 ns and Qrr to 18 µC. The diode is not ultra-fast but is fully characterized and rated for use in freewheeling and synchronous rectification roles.

Can STW56N65M2 be used in zero-voltage switching (ZVS) topologies without external snubbers?

Yes - its Coss,eq = 838 pF over 0–520 V provides predictable energy storage (≈115 µJ at 520 V), enabling reliable ZVS in LLC and phase-shifted full-bridge converters. However, ZVS initiation depends on circuit inductance and load; the device itself does not guarantee ZVS but provides the necessary Coss linearity and low Qgd to support it.

Is the TO-247 package lead-free and RoHS-compliant?

Yes, STW56N65M2 is supplied in an ECOPACK2-compliant TO-247 package, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. The device is halogen-free and qualifies for lead-free soldering processes with peak temperatures up to 260 °C, as confirmed in Section 4 of DS10775 Rev 2.

STW56N65M2 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
MDmesh™ M2
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
62mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
93 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
3900 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
358W (Tc)
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3

STW56N65M2 FAQ

1.How can I place an order for STW56N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW56N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW56N65M2 reliable?

The price and inventory of STW56N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW56N65M2 is usually 5 days.

3.What payment methods are accepted for STW56N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW56N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW56N65M2?

STW56N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW56N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW56N65M2?

For technical support, including STW56N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW56N65M2 requirements.

6.How does Aetrix verify that STW56N65M2 is sourced from the original manufacturer or authorized distributors?

All STW56N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW56N65M2 meets industry standards.

7.What is the process for return or replacement of STW56N65M2?

All STW56N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STW56N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW56N65M2 part is unused and in its original packaging.

Return procedure for STW56N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

STW56N65M2 Tags

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