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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW56N65M2-4

Name: STW56N65M2-4
Brand: STMicroelectronics
SKU: STW56N65M2-4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW56N65M2-4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: STW56N65M2-4.pdf

Description:: MOSFET N-CH 650V 49A TO247-4L

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Product details

Overview

STW56N65M2-4 from STMicroelectronics is an N-channel 650 V, 49 A MDmesh M2 Power MOSFET in TO-247-4 package with 49 mΩ typical R_DS(on), 93 nC total gate charge, and Zener-protected gate, designed for high-efficiency hard-switched PFC and LLC resonant converters in industrial SMPS.

For engineers reviewing the STW56N65M2-4 datasheet, STW56N65M2-4 pinout, STW56N65M2-4 application, or STW56N65M2-4 equivalent, key selection criteria include avalanche ruggedness (1.3 J E_AS), low C_oss profile (160 pF), driver-source pin architecture, and 150 °C maximum junction temperature for continuous high-power operation.

Technical Context

This device employs ST's MDmesh M2 strip layout and optimized vertical structure to simultaneously reduce conduction loss and switching loss. Its extra driving source pin decouples gate drive return path from power source, minimizing common-source inductance and improving dv/dt immunity (50 V/ns MOSFET ruggedness).

The MOSFET features a Zener-protected gate (±25 V V_GS rating), 100% unclamped inductive avalanche tested performance (3.5 A I_AR), and a low 838 pF equivalent output capacitance (C_oss,eq) across 0–520 V, enabling fast, low-loss turn-off in high-frequency topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus designs with ≥30 % voltage margin for transient overvoltage handling
R_DS(on) typ.	49 mΩ at V_GS = 10 V, I_D = 24.5 A - enables <1.2 W conduction loss at 25 A continuous drain current
Q_g	93 nC - determines gate drive power requirement and influences minimum achievable switching frequency
C_oss,eq	838 pF - defines stored energy (E_OSS ≈ 0.5 × C_oss,eq × V_DS²) critical for ZVS implementation
E_AS	1.3 J - quantifies single-pulse avalanche robustness under unclamped inductive switching stress
T_J(max)	150 °C - sets thermal design boundary for heatsink sizing and derating curves up to 100 °C case temperature
dv/dt ruggedness	50 V/ns - ensures reliable operation during fast voltage transients without spurious turn-on

Pinout & Package

Package: TO-247-4 (ECOPACK® compliant), with isolated tab (Drain), Gate, Driver Source, and Power Source terminals. The 4-pin configuration separates signal and power return paths to suppress gate loop inductance.

Pin/Terminal	Circuit Role	Design Meaning
1 & Tab	Drain	Main high-voltage power terminal; electrically connected to metal tab for direct heatsink mounting and low-inductance thermal path
2	Power Source (S)	Source connection for main power current path; referenced to system ground or negative rail in half-bridge configurations
3	Driver Source (S_D)	Dedicated low-inductance gate drive return; isolates gate loop from power di/dt noise to prevent false triggering
4	Gate	Control input for MOSFET channel; requires 10 V drive for full enhancement; protected by integrated Zener clamp

Key Features

Feature	Design Value
Extra driving source pin	Reduces gate loop inductance by >50 % vs. 3-pin TO-247, enabling stable 500 kHz+ operation in hard-switched converters
Zener-protected gate	Integrated ±25 V gate-body clamp eliminates need for external gate protection components in noisy industrial environments
Optimized C_oss profile	160 pF C_oss + 838 pF C_oss,eq enables efficient zero-voltage switching in resonant topologies up to 300 kHz
100 % avalanche tested	Each unit validated for 3.5 A repetitive avalanche current and 1.3 J single-pulse energy per JEDEC JESD24-11
MDmesh M2 technology	Strip-based superjunction structure achieves 49 mΩ R_DS(on) × 650 V rating with <10 % R_DS(on) drift from 25 °C to 125 °C

Applications

Industrial Server PSU

Telecom Rectifier Module

Use Scenario: Primary-side switch in 3.5 kW active-clamp forward or LLC resonant converter operating at 200–300 kHz.

IC Role / Device Role / Timing Role: High-voltage, high-current synchronous rectification switch with ZVS capability enabled by low C_oss,eq.

Use Value: Achieves >96 % efficiency at full load with <1.5 K/W heatsink requirement due to 0.36 °C/W R_thJC and 49 mΩ R_DS(on).

Use Scenario: PFC boost switch in 2.5 kW telecom rectifier with 98 % THD compliance and 400 V DC output.

IC Role / Device Role / Timing Role: Fast-recovery, low-Q_rr (13.5 µC) MOSFET supporting discontinuous/transition-mode operation.

Use Value: Reduces diode recovery losses by 40 % vs. standard 650 V MOSFETs, lowering thermal stress on boost inductor and capacitor.

Solar Inverter DC-DC Stage

EV Onboard Charger (OBC)

Use Scenario: Isolated DC-DC stage in 5 kW string inverter using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-reliability primary switch rated for 150 °C junction operation under solar farm ambient conditions.

Use Value: Sustains 31 A continuous current at T_C = 100 °C with no derating penalty, enabling compact heatsink integration.

Use Scenario: Secondary-side synchronous rectifier in 11 kW bidirectional OBC with SiC primary stage.

IC Role / Device Role / Timing Role: Low-R_DS(on) N-channel switch replacing Schottky diodes to reduce conduction loss at 49 A peak current.

Use Value: Delivers 0.8 V forward drop (V_SD) at 49 A, cutting rectifier losses by >65 % versus 1.2 V Schottky solution.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7	650 V, 41 mΩ R_DS(on), 112 nC Q_g, TO-247-4, CoolMOS CFD7	Higher gate charge increases driver loss; lower R_DS(on) favors lower conduction loss at <20 A	Prefer when conduction loss dominates and gate drive capability supports higher Q_g
IXFH50N65X2	650 V, 50 mΩ R_DS(on), 72 nC Q_g, TO-247-3, HiPerFET X2	No driver-source pin; 3-pin package increases gate loop inductance; lower Q_g eases drive requirements	Prefer for cost-sensitive designs where dv/dt immunity is less critical and layout cannot accommodate 4-pin routing

Compared with IPW65R041CFD7 and IXFH50N65X2, STW56N65M2-4 uniquely balances low Q_g/C_oss ratio, driver-source isolation, and proven avalanche ruggedness-making it optimal for high-reliability, high-frequency industrial SMPS where layout-induced noise and transient stress are design constraints.

Availability

STW56N65M2-4 is available at Aetrix Electronics and suitable for industrial server PSUs, telecom rectifier modules, and solar inverter DC-DC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STW56N65M2-4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, microcontrollers, sensors, and analog solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M2 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies in industrial and telecom infrastructure.

FAQ

What is the purpose of the fourth pin (Driver Source) on the STW56N65M2-4?

The fourth pin is a dedicated Driver Source (S_D) terminal that provides a low-inductance return path for gate drive current, physically separating it from the main power source (S) pin. This minimizes common-source inductance, suppresses gate voltage ringing, and improves dv/dt immunity-critical for stable operation above 200 kHz in hard-switched topologies.

Does STW56N65M2-4 support zero-voltage switching (ZVS) in resonant converters?

Yes. With its low 838 pF equivalent output capacitance (C_oss,eq) and 160 pF measured C_oss, the device delivers predictable and low stored energy (E_OSS ≈ 0.11 mJ at 400 V), enabling reliable ZVS turn-on in LLC and phase-shifted full-bridge converters operating up to 300 kHz.

How does the avalanche rating of STW56N65M2-4 compare to standard 650 V MOSFETs?

It is fully rated for 1.3 J single-pulse avalanche energy (E_AS) and 3.5 A repetitive avalanche current (I_AR), verified per JEDEC JESD24-11. This exceeds typical 650 V MOSFETs (often 0.3–0.6 J E_AS) and ensures robustness against unclamped inductive switching events in PFC and flyback circuits.

Can STW56N65M2-4 replace a 3-pin TO-247 MOSFET in an existing design?

Yes, but layout modification is required: the Driver Source (Pin 3) must be routed separately from Power Source (Pin 2) to realize its noise-immunity benefit. If left unconnected or tied to Pin 2, performance reverts to standard 3-pin behavior-no damage occurs, but dv/dt ruggedness and switching stability degrade.

STW56N65M2-4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 62mOhm @ 24.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 93 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3900 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 358W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4

STW56N65M2-4 FAQ

1.How can I place an order for STW56N65M2-4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW56N65M2-4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW56N65M2-4 reliable?

The price and inventory of STW56N65M2-4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW56N65M2-4 is usually 5 days.

3.What payment methods are accepted for STW56N65M2-4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW56N65M2-4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW56N65M2-4?

STW56N65M2-4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW56N65M2-4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW56N65M2-4?

For technical support, including STW56N65M2-4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW56N65M2-4 requirements.

6.How does Aetrix verify that STW56N65M2-4 is sourced from the original manufacturer or authorized distributors?

All STW56N65M2-4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW56N65M2-4 meets industry standards.

7.What is the process for return or replacement of STW56N65M2-4?

All STW56N65M2-4 units undergo pre-shipment inspection (PSI). If there is an issue with STW56N65M2-4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW56N65M2-4 part is unused and in its original packaging.

Return procedure for STW56N65M2-4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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