STMicroelectronics STW56NM60N

Overview

STW56NM60N from STMicroelectronics is an N-channel 600 V, 45 A, 0.05 Ω R_DS(on) Power MOSFET in TO-247 package, built on MDmesh™ II vertical strip technology for ultra-low conduction and switching losses. It serves as a primary high-voltage switching device in offline SMPS, PFC stages, and industrial motor drives requiring high efficiency at 50–100 kHz operation.

For engineers reviewing the STW56NM60N datasheet, STW56NM60N pinout, STW56NM60N application, or STW56NM60N equivalent, key selection criteria include its 150 °C max junction temperature, 150 nC total gate charge, 4800 pF input capacitance, avalanche ruggedness, and TO-247 thermal resistance of 0.42 °C/W.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ II process, combining a vertical drift region with optimized strip layout to minimize both R_DS(on) and gate charge simultaneously. Its 600 V V_DSS, 0.05 Ω typical R_DS(on) at V_GS = 10 V, and 150 nC Q_g enable high-power density in hard-switched converters.

The device features 100% unclamped inductive avalanche testing, low C_iss/C_oss ratio (4800 pF / 320 pF), and fast source-drain diode recovery (trr < 200 ns under specified conditions), supporting reliable operation in continuous conduction mode (CCM) PFC and resonant topologies.

Key Specifications

Pinout & Package

STW56NM60N uses a standard 3-pin TO-247 package with drain-connected tab for direct heatsink mounting. Pin 1 is Gate, Pin 2 is Drain (tab), Pin 3 is Source - verified per STMicroelectronics mechanical drawing Doc ID 15723 Rev 2, Figure 8.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R099C7 and IXFH50N60P, STW56NM60N delivers superior power density via lower R_DS(on) and gate charge, enabling smaller heatsinks and faster switching in 1–3 kW industrial and renewable energy systems.

Availability

STW56NM60N is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, solar inverter DC-DC stages, and EV onboard charger HV sections requiring stable component supply across multi-year production cycles.

Supply support for STW56NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in offline AC-DC and DC-DC conversion systems up to 3 kW.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW56NM60N supports 28 A continuous drain current when the case temperature is maintained at 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-247 package and ensures safe operation within the 150 °C maximum junction temperature limit under realistic heatsink conditions.

Is the source-drain diode suitable for synchronous rectification?

No - the body diode has a typical forward voltage of 1.6 V at 45 A and uncharacterized reverse recovery behavior beyond trr and Qrr values. Its relatively high V_SD and lack of controlled soft-recovery make it unsuitable for synchronous rectification; external Schottky or MOSFET-based synchronous rectifiers are required for efficiency-critical outputs.

Does this MOSFET require negative gate drive for reliable turn-off?

No - the device operates reliably with 0 V to 10 V gate drive and does not require negative bias. Its gate threshold voltage range (2–4 V) and low gate leakage (<100 nA at ±20 V) ensure stable off-state under standard CMOS/TTL-compatible drivers; however, a –5 V to 0 V turn-off bias may improve noise immunity in high-dV/dt environments.

Can STW56NM60N replace STW48NM60 in existing designs?

Yes - it is a direct upgrade: same TO-247 package, identical pinout, and improved specs (lower R_DS(on) from 0.065 Ω to 0.05 Ω, lower Q_g from 165 nC to 150 nC). No layout or driver changes are needed, and thermal performance improves due to reduced conduction loss and identical R_thj-case.