STMicroelectronics STW57N65M5

Overview

STW57N65M5 from STMicroelectronics is an N-channel 650 V, 56 mΩ typ. (63 mΩ max), 42 A Power MOSFET based on MDmesh M5 vertical process technology in TO-220FP package. It delivers ultra-low R_DS(on), high avalanche ruggedness (960 mJ E_AS), and fast switching (t_d(v) = 73 ns, Q_g = 98 nC), enabling high-efficiency operation in industrial SMPS and PFC stages.

For engineers reviewing the STW57N65M5 datasheet, STW57N65M5 pinout, STW57N65M5 application, or STW57N65M5 equivalent, key selection criteria include its 650 V V_(BR)DSS, 42 A continuous drain current at T_C = 25 °C, 100% avalanche-tested reliability, and low gate charge for hard-switched topologies requiring minimal drive loss.

Technical Context

This device implements a high-voltage silicon power switch optimized for discontinuous and continuous conduction mode (DCM/CCM) PFC and main switch applications. Its MDmesh M5 structure achieves 56 mΩ typ. R_DS(on) at 650 V rating while maintaining low C_iss (4200 pF) and Crss (9 pF), supporting high-frequency operation up to 100 kHz with reduced switching losses.

The integrated body diode features 42 A continuous source-drain current, 1.5 V forward voltage at 42 A, and 418 ns reverse recovery time (T_J = 25 °C), enabling robust performance in bridge configurations without external anti-parallel diodes in many medium-power designs.

Key Specifications

Pinout & Package

STW57N65M5 is housed in a TO-220FP (Full-Pak) package with isolated tab, offering enhanced creepage/clearance versus standard TO-220 and simplified heatsinking without insulating pads. The plastic body provides 2.5 kV RMS insulation from leads to heatsink (t = 1 s).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP57N65M5, STW57N65M5 trades higher thermal resistance for built-in isolation and safer mechanical integration; versus IPP65R099C7, it delivers 40% lower R_DS(on) at the cost of +50% Q_g, making it preferable in high-current, thermally constrained industrial SMPS.

Availability

STW57N65M5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, motor drive inverters, and uninterruptible power supplies requiring stable component supply and long-term production continuity.

Supply support for STW57N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STW57N65M5 belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability 650 V power conversion in industrial and telecom infrastructure equipment.

FAQ

What is the maximum continuous drain current for STW57N65M5 at 100 °C case temperature?

The maximum continuous drain current is 26.5 A at T_C = 100 °C, as specified in Table 1 of DS8913 Rev 6. This derating reflects thermal limitations of the TO-220FP package, which has a junction-to-case thermal resistance of 3.1 °C/W. Operation above this current requires active cooling or reduced ambient temperature to maintain T_J ≤ 150 °C.

Does STW57N65M5 require a negative gate voltage for reliable turn-off in high-dV/dt environments?

No, STW57N65M5 does not require negative gate drive. Its gate threshold voltage is 3–5 V (typ. 4 V), and it is characterized for stable operation with 0 V to 10 V gate drive. The low Crss (9 pF) and high dV/dt immunity (15 V/ns) enable robust turn-off using standard 0–10 V gate drivers even in noisy inverter applications.

Can STW57N65M5 replace STP57N65M5 in an existing design without layout changes?

No - STW57N65M5 uses TO-220FP with isolated tab, while STP57N65M5 uses standard TO-220 with conductive tab. Direct replacement requires verifying heatsink isolation, adjusting mounting hardware, and revalidating thermal performance due to the higher R_thJC (3.1 vs. 0.5 °C/W). PCB footprint differs only in lead spacing; mechanical cutouts may need revision.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode at 150 °C junction temperature?

The typical reverse recovery charge is 12 μC at T_J = 150 °C, per Table 7 in DS8913 Rev 6. This represents a 50% increase over the 25 °C value (8 μC), reflecting increased minority carrier lifetime at elevated temperature. Designers must account for this in snubber sizing and EMI filtering for high-temperature operation.