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STMicroelectronics STW58N60DM2AG

Name: STW58N60DM2AG
Brand: STMicroelectronics
SKU: STW58N60DM2AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW58N60DM2AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW58N60DM2AG.pdf

Description:: MOSFET N-CH 600V 50A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW58N60DM2AG from STMicroelectronics is an AEC-Q101 qualified N-channel 600 V, 52 mΩ typ. (60 mΩ max.), 50 A automotive-grade Power MOSFET in TO-247 package, featuring fast-recovery body diode (trr = 140 ns @ TJ = 25 °C), ultra-low Qg (90 nC), and high dv/dt ruggedness (50 V/ns). It is engineered for ZVS phase-shift converters and full-bridge topologies in on-board chargers and traction inverters.

For engineers reviewing the STW58N60DM2AG datasheet, STW58N60DM2AG pinout, STW58N60DM2AG application, or STW58N60DM2AG equivalent, key selection criteria include RDS(on) temperature stability, avalanche energy rating (EAS = 800 mJ), body diode Qrr (0.7 µC), gate charge profile, and TO-247 thermal resistance (RthJC = 0.35 °C/W).

Technical Context

This MDmesh DM2-series device integrates a Zener-protected gate and optimized cell structure to achieve simultaneous low conduction loss and fast, soft reverse recovery-critical for minimizing switching losses in hard- and resonant-switched topologies. Its 50 V/ns MOSFET dv/dt ruggedness and 100% unclamped inductive avalanche testing ensure robustness under transient overvoltage conditions.

The device's Coss_eq of 325 pF (0–480 V) and Crss of 3.2 pF enable precise control of voltage-dependent output capacitance and reduced Miller effect, supporting stable operation at high frequencies up to 500 kHz in high-efficiency SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in bridge configurations with margin for transients.
R_DS(on) max	60 mΩ @ TC = 25 °C - Enables <1.5 W conduction loss at 50 A, reducing heatsink requirements.
Q_g	90 nC - Low gate drive power demand supports efficient 100–500 kHz switching with standard gate drivers.
t_rr	140 ns @ TJ = 25 °C - Fast, soft body diode recovery minimizes commutation loss and EMI in synchronous rectification.
E_AS	800 mJ - Rated single-pulse avalanche energy allows reliable operation during short-circuit events without derating.
R_thJC	0.35 °C/W - Enables direct mounting to heatsinks for high-power dissipation (up to 360 W at TC = 25 °C).
dv/dt ruggedness	50 V/ns - Sustains rapid voltage transients without spurious turn-on, critical in high-dV/dt half-bridge nodes.

Pinout & Package

TO-247 package: isolated metal tab (Drain), 3-pin through-hole outline with center-tab thermal path. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Low-impedance input for PWM control; requires <4.2 Ω intrinsic gate resistance for predictable switching timing.
Pin 2 (D / Tab)	Drain connection + thermal interface	Electrically connected to internal die drain; metal tab must be electrically isolated and thermally coupled to heatsink.
Pin 3 (S)	Source terminal	Reference node for gate drive; carries full load current (50 A continuous) and source-diode return path.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and charging systems per stress test requirements (HTOL, TC, UHAST).
Fast-recovery body diode	Qrr = 0.7 µC and trr = 140 ns enable zero-voltage switching in phase-shifted full-bridge converters.
Zener-protected gate	Integrated gate oxide protection withstands ±25 V V_GS transients without degradation or latch-up.
Extremely low Q_g and C_iss	90 nC total gate charge and 4100 pF input capacitance reduce driver power and improve gate control fidelity.
100% avalanche tested	Each unit undergoes unclamped inductive switching test at I_AR = 12 A, ensuring production-level ruggedness.

Applications

On-Board Charger (OBC)

Traction Inverter Half-Bridge

Use Scenario: 6.6 kW bidirectional OBC operating in dual-phase interleaved PFC + CLLC resonant DC/DC stage.

IC Role / Device Role / Timing Role: High-side switch in CLLC transformer primary leg, handling 50 A peak current at 200–350 kHz.

Use Value: Low Q_rr and soft recovery reduce dead-time losses and EMI generation during zero-current switching transitions.

Use Scenario: Traction inverter sub-module driving permanent magnet motor with field-weakening above base speed.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg, conducting 50 A RMS with 200 A pulsed capability.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during high-slew-rate shoot-through events in high-voltage battery systems.

Industrial UPS Inverter

High-Voltage Solar Microinverter

Use Scenario: 10 kVA online UPS with double-conversion topology using full-bridge inverter stage.

IC Role / Device Role / Timing Role: Output bridge switch operating at 16 kHz with 600 V DC link and active clamping.

Use Value: 800 mJ E_AS rating supports safe clamping of inductive kickback during grid-fault interruption.

Use Scenario: 1.2 kW string-connected microinverter with LLC resonant converter and 600 V PV input.

IC Role / Device Role / Timing Role: Primary-side switch in LLC half-bridge, switching at 300–500 kHz with ZVS.

Use Value: C_{oss_eq} = 325 pF enables predictable resonant tank behavior and tight frequency control across temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	R_DS(on) = 68 mΩ max., Q_g = 75 nC, trr = 160 ns, no AEC-Q101 certification	Lower current rating (44 A), suited for non-automotive 5–8 kW SMPS where qualification is not required	Select when cost sensitivity outweighs automotive compliance and 50 A current headroom.
IXFH50N60P3	R_DS(on) = 75 mΩ max., Q_g = 120 nC, trr = 220 ns, no integrated Zener gate protection	Higher switching loss due to elevated Q_g and slower diode; requires external gate clamp circuitry	Choose only if legacy design uses IXYS footprint and thermal constraints allow higher drive power.

Compared with STW48N60M2 and IXFH50N60P3, STW58N60DM2AG delivers superior automotive qualification, lower conduction loss, faster diode recovery, and built-in gate protection-making it the optimal choice for safety-critical, high-frequency, high-reliability 600 V power stages.

Availability

STW58N60DM2AG is available at Aetrix Electronics and suitable for on-board chargers, traction inverters, industrial UPS systems, and solar microinverters requiring stable component supply, long-term automotive-grade availability, and traceable sourcing.

Supply support for STW58N60DM2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, automotive ICs, and discrete devices with vertical manufacturing and rigorous AEC-Q101 validation.

This device belongs to the MDmesh DM2 series-a family of high-voltage silicon MOSFETs designed specifically for high-efficiency, high-frequency power conversion in automotive electrification and industrial energy systems.

FAQ

Is STW58N60DM2AG pin-compatible with earlier STW58N60DM2?

No. STW58N60DM2AG replaces STW58N60DM2 with enhanced gate protection and tighter R_DS(on) distribution but retains identical TO-247 pinout and mechanical footprint. Electrical differences-including improved Q_rr, lower C_iss, and updated avalanche test protocol-require verification in final layout and thermal design.

What is the maximum recommended gate resistor for 300 kHz switching?

A gate resistor of 4.7 Ω is validated per datasheet test conditions (VDD = 300 V, ID = 25 A) for controlled turn-on/off times (td(on) = 24 ns, td(off) = 130 ns). For 300 kHz operation, 4.7–10 Ω balances switching loss reduction and EMI suppression; values below 3.3 Ω risk excessive di/dt-induced ringing.

Does the body diode require external snubbing in ZVS applications?

No. The fast-recovery body diode (trr = 140 ns, Qrr = 0.7 µC) is characterized for soft, low-loss commutation in ZVS phase-shift converters. Snubbers are unnecessary when operating within rated dv/dt (≤50 V/ns) and di/dt (≤800 A/μs); however, PCB layout must minimize loop inductance to preserve soft switching behavior.

Can STW58N60DM2AG be paralleled for higher current capacity?

Yes-its positive R_DS(on) temperature coefficient (R_DS(on) increases with junction temperature) enables inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical layout, and individual gate resistors (≥4.7 Ω) to prevent oscillation; derate total current by 15% for thermal margin at TC = 100 °C.

STW58N60DM2AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 60mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 4100 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 360W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW58N60DM2AG FAQ

1.How can I place an order for STW58N60DM2AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STW58N60DM2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW58N60DM2AG reliable?

The price and inventory of STW58N60DM2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW58N60DM2AG is usually 5 days.

3.What payment methods are accepted for STW58N60DM2AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW58N60DM2AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW58N60DM2AG?

STW58N60DM2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW58N60DM2AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW58N60DM2AG?

For technical support, including STW58N60DM2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW58N60DM2AG requirements.

6.How does Aetrix verify that STW58N60DM2AG is sourced from the original manufacturer or authorized distributors?

All STW58N60DM2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW58N60DM2AG meets industry standards.

7.What is the process for return or replacement of STW58N60DM2AG?

All STW58N60DM2AG units undergo pre-shipment inspection (PSI). If there is an issue with STW58N60DM2AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW58N60DM2AG part is unused and in its original packaging.

Return procedure for STW58N60DM2AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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