Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW58N65DM2AG

Name: STW58N65DM2AG
Brand: STMicroelectronics
SKU: STW58N65DM2AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STW58N65DM2AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW58N65DM2AG.pdf

Description:: MOSFET N-CH 650V 48A TO247

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,590

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STW58N65DM2AG from STMicroelectronics is an AEC-Q101-qualified N-channel 650 V, 58 mΩ typ. (65 mΩ max), 48 A, 360 W TO-247 Power MOSFET with fast-recovery body diode and Zener-protected gate. It delivers extremely low Q_g (88 nC), C_iss (4100 pF), and Q_rr (0.68 µC @ 25 °C), enabling high-efficiency bridge and ZVS phase-shift converters in automotive on-board chargers and industrial SMPS.

For engineers reviewing the STW58N65DM2AG datasheet, STW58N65DM2AG pinout, STW58N65DM2AG application, or STW58N65DM2AG equivalent, key selection criteria include its 50 V/ns dv/dt ruggedness, 100% avalanche tested reliability, low R_DS(on) temperature coefficient, fast trr (135 ns), and integrated Zener gate protection - all critical for high-voltage hard-switching and resonant topologies.

Technical Context

This MDmesh DM2-series device integrates a fast-recovery body diode with ultra-low Q_rr (0.68 µC) and trr (135 ns at TJ = 25 °C), enabling reduced switching losses in synchronous rectification and LLC resonant converters. Its 650 V V_(BR)DSS and 50 V/ns MOSFET dv/dt ruggedness support operation in high-dV/dt environments like motor drives and PFC stages.

The MOSFET features low intrinsic gate resistance (4.1 Ω), optimized gate charge distribution (Q_gd/Q_g = 42%), and stable R_DS(on) over temperature (1.4× increase from 25 °C to 125 °C). Thermal resistance R_thJC is 0.35 °C/W, allowing high-power dissipation in TO-247 with minimal heatsink requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	650 V - Withstands DC bus voltages up to 520 V in ZVS operation with 20% margin
R_DS(on) max	65 mΩ @ 10 V_GS, 24 A - Enables <1.5 W conduction loss at 48 A in continuous mode
Q_g	88 nC - Reduces gate drive power and enables use of lower-cost drivers in 100–300 kHz designs
Q_rr	0.68 µC @ 25 °C - Minimizes reverse recovery loss and EMI in hard-switched bridges
dv/dt ruggedness	50 V/ns - Ensures reliable operation during fast voltage transients without spurious turn-on
T_J max	150 °C - Supports automotive under-hood and industrial ambient temperatures up to 105 °C
E_AS	1300 mJ - Provides robust unclamped inductive switching capability for motor control fault handling

Pinout & Package

Supplied in TO-247 package with isolated tab (Drain-connected metal flange), standard 3-pin configuration optimized for high-current thermal and electrical performance.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Low-impedance control input; Zener-protected against ±25 V transients
2 (D, TAB)	Drain / Heat Sink Interface	Electrically connected to metal tab; provides primary thermal path and high-current return
3 (S)	Source	Reference node for gate drive and current sensing; low-inductance Kelvin connection possible

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and charging systems per stress test requirements
Fully avalanche rated	100% production-tested for single-pulse E_AS = 1300 mJ ensures robustness in inductive fault conditions
Fast-recovery body diode	trr = 135 ns and Q_rr = 0.68 µC enable efficient synchronous operation without external diode
Low gate charge & capacitance	Q_g = 88 nC and C_iss = 4100 pF reduce driver loss and improve switching speed control
Zener-protected gate	Integrated gate-source Zener clamps transients to ±25 V, eliminating need for external TVS

Applications

On-Board Charger (OBC)

Industrial SMPS

Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11–22 kW EV on-board chargers.

IC Role / Device Role / Timing Role: Primary-side high-side switch in dual-active-bridge (DAB) topology operating at 100–200 kHz.

Use Value: Low Q_rr and fast trr minimize body-diode conduction loss during zero-voltage switching transitions, improving efficiency by >0.8% at full load.

Use Scenario: High-efficiency 3–5 kW telecom and server PSUs with active clamp forward or LLC resonant converters.

IC Role / Device Role / Timing Role: Main switching FET in half-bridge primary stage with 50–300 kHz switching frequency.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during high-slew-rate gate drive, eliminating need for negative gate bias.

Motor Drive Inverter

High-Voltage PFC

Use Scenario: 7.5–15 kW traction inverters for industrial pumps and HVAC compressors.

IC Role / Device Role / Timing Role: Phase-leg switch in 3-phase inverter with 10–16 kHz PWM and regenerative braking.

Use Value: 150 A pulsed drain current rating and 1300 mJ E_AS withstand short-circuit events during motor stall or overload.

Use Scenario: Continuous-conduction-mode (CCM) boost PFC front-end in 3–6 kW industrial power supplies.

IC Role / Device Role / Timing Role: Boost switch operating at 65–100 kHz with high line-voltage swing (up to 400 VDC).

Use Value: Stable R_DS(on) over temperature and low C_oss (160 pF) reduce turn-off loss and improve light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N65M5	Lower R_DS(on) (42 mΩ typ.), higher Q_g (115 nC), same 650 V rating and TO-247 package	Better conduction loss but higher gate drive loss; less suitable for >200 kHz operation	Prefer when thermal budget is tight and switching frequency ≤150 kHz
IPP65R099C7	Infineon CoolMOS C7; 99 mΩ R_DS(on), lower Q_rr (0.45 µC), different gate threshold (2.5–3.5 V)	Higher V_GS(th) variation requires tighter gate drive design; not AEC-Q101 qualified	Select only for non-automotive industrial use where gate drive stability is assured

Compared with STW48N65M5 and IPP65R099C7, STW58N65DM2AG offers the optimal balance of low Q_g, fast diode recovery, and automotive qualification - making it preferred for ZVS converters requiring both efficiency and functional safety compliance.

Availability

STW58N65DM2AG is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial SMPS, motor drive inverters, and high-voltage PFC circuits requiring stable component supply across multi-year production cycles.

Supply support for STW58N65DM2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STW58N65DM2AG belongs to the MDmesh DM2 family - engineered specifically for high-efficiency, high-frequency power conversion in automotive and industrial applications demanding low Q_rr, rugged dv/dt behavior, and AEC-Q101 reliability.

FAQ

Is STW58N65DM2AG suitable for zero-voltage switching (ZVS) topologies?

Yes. Its fast-recovery body diode (trr = 135 ns, Q_rr = 0.68 µC) and low output capacitance (C_oss = 160 pF) enable reliable ZVS operation in phase-shifted full-bridge and LLC resonant converters. The 50 V/ns dv/dt ruggedness further ensures stable turn-off during high-slew-rate transitions without spurious conduction.

What is the maximum continuous junction temperature and how does R_DS(on) vary with temperature?

The maximum operating junction temperature is 150 °C. R_DS(on) increases approximately 1.4× from 25 °C to 125 °C (per Figure 9), with typical values of 58 mΩ at 25 °C and ~81 mΩ at 125 °C. This predictable positive temperature coefficient supports current sharing in paralleled configurations.

Does STW58N65DM2AG require external gate protection?

No. It integrates a Zener diode between gate and source rated for ±25 V, providing built-in protection against ESD and gate-drive transients. This eliminates the need for external TVS diodes in most automotive and industrial gate drive circuits, simplifying layout and reducing BOM count.

How is avalanche capability validated for this part?

Every unit undergoes 100% production testing for single-pulse avalanche energy (E_AS = 1300 mJ at T_J = 25 °C, V_DD = 50 V, I_D = 7 A). This ensures robustness during unclamped inductive switching events such as motor phase short-circuits or transformer saturation faults in real-world power systems.

STW58N65DM2AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 65mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 88 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 4100 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 360W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW58N65DM2AG FAQ

1.How can I place an order for STW58N65DM2AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STW58N65DM2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW58N65DM2AG reliable?

The price and inventory of STW58N65DM2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW58N65DM2AG is usually 5 days.

3.What payment methods are accepted for STW58N65DM2AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW58N65DM2AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW58N65DM2AG?

STW58N65DM2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW58N65DM2AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW58N65DM2AG?

For technical support, including STW58N65DM2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW58N65DM2AG requirements.

6.How does Aetrix verify that STW58N65DM2AG is sourced from the original manufacturer or authorized distributors?

All STW58N65DM2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW58N65DM2AG meets industry standards.

7.What is the process for return or replacement of STW58N65DM2AG?

All STW58N65DM2AG units undergo pre-shipment inspection (PSI). If there is an issue with STW58N65DM2AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW58N65DM2AG part is unused and in its original packaging.

Return procedure for STW58N65DM2AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…