STMicroelectronics STW5NK100Z

Overview

STW5NK100Z from STMicroelectronics is a Zener-protected N-channel SuperMESH Power MOSFET rated for 1000 V drain-source voltage, 2.7 Ω typical R_DS(on), and 3.5 A continuous drain current at T_C = 25 °C in a TO-247 package. It delivers high dv/dt capability (4.5 V/ns), 100% avalanche-tested ruggedness (E_AS = 250 mJ), and low gate charge (Q_g = 42–59 nC), enabling reliable high-voltage switching in offline SMPS and industrial AC-DC converters.

For engineers reviewing the STW5NK100Z datasheet, STW5NK100Z pinout, STW5NK100Z application, or STW5NK100Z equivalent, key selection criteria include its 1000 V blocking rating, TO-247 thermal performance (R_thJC = 1 °C/W), Zener-protected gate, and verified unclamped inductive switching robustness - critical for flyback, resonant, and PFC stage design.

Technical Context

This device implements ST's SuperMESH process - an optimized evolution of PowerMESH - to reduce R_DS(on) while maintaining high-voltage integrity and fast switching dynamics. Its intrinsic capacitances are minimized (C_iss = 1154 pF, C_oss = 106 pF, C_rss = 21.3 pF), and it features a built-in Zener diode between gate and source for ESD and transient overvoltage protection (±30 V V_GS, 4 kV HBM).

The MOSFET supports hard-switched and resonant topologies with guaranteed avalanche capability (I_AR = 3.5 A, repetitive), reverse recovery characteristics (t_rr = 605 ns at T_J = 25 °C), and stable gate threshold (V_GS(th) = 3.0–4.5 V) across temperature. Its SOA is validated up to 1000 V and 3.5 A with pulse-limited safe operating area curves provided for TO-247 mounting.

Key Specifications

Pinout & Package

STW5NK100Z is housed in a TO-247 package with isolated tab (pin 2), offering superior thermal dissipation (R_thJC = 1 °C/W) and creepage/clearance suitable for reinforced insulation in >600 V systems.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Compared with STP5NK100Z, STW5NK100Z offers 4× better thermal resistance and higher peak power handling; versus IXTH1N100D2, it provides guaranteed avalanche robustness and gate protection essential for commercial industrial power supplies.

Availability

STW5NK100Z is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED streetlight drivers, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing for safety-critical deployments.

Supply support for STW5NK100Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with manufacturing in Europe and Asia.

STW5NK100Z belongs to the SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability offline switching applications where 1000 V blocking, avalanche tolerance, and low gate charge are mandatory.

FAQ

What is the maximum continuous drain current for STW5NK100Z at 100 °C case temperature?

The maximum continuous drain current is 2.2 A at T_C = 100 °C, as specified in Table 1 of DS4032 Rev 6. This derating reflects thermal limits of the TO-247 package and silicon safe operating area constraints, not gate drive capability. Operation above this current requires pulsed conditions (I_DM = 14 A) with strict duty cycle control.

Does STW5NK100Z require an external gate resistor for EMI suppression?

Yes - a gate resistor (typically 4.7–10 Ω) is recommended to dampen ringing caused by PCB trace inductance interacting with Q_gd and C_iss. The datasheet specifies switching times (e.g., t_d(on) = 22.5 ns, t_f = 19 ns) using R_G = 4.7 Ω, confirming its role in controlling di/dt and reducing radiated emissions in 100–500 kHz SMPS designs.

Can STW5NK100Z replace STP5NK100Z in an existing TO-220 footprint?

No - STW5NK100Z uses a TO-247 package with different pin spacing (e.g., lead-to-tab distance and mounting hole position), making it mechanically incompatible with TO-220 footprints. Direct replacement would require PCB redesign, heatsink repositioning, and verification of creepage/clearance compliance for 1000 V isolation.

Is the body diode of STW5NK100Z suitable for synchronous rectification?

No - the body diode is optimized for freewheeling, not synchronous rectification. Its reverse recovery time (t_rr = 605–742 ns) and Q_rr (3.09–4.2 μC) are too high for efficient SR operation above 100 kHz. Dedicated low-Q_rr MOSFETs or Schottky diodes are required for synchronous rectifier stages in high-frequency converters.