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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW60NE10

Name: STW60NE10
Brand: STMicroelectronics
SKU: STW60NE10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW60NE10

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW60NE10.pdf

Description:: MOSFET N-CH 100V 60A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW60NE10 from STMicroelectronics is an N-channel 100 V, 60 A power MOSFET in TO-247 package with typical R_DS(on) = 0.016 Ω, 100% avalanche tested, and exceptional dv/dt capability (9 V/ns). It serves as a high-current switching device in automotive lamp drivers and DC-DC converters where ruggedness and fast turn-on are critical.

For engineers reviewing the STW60NE10 datasheet, STW60NE10 pinout, STW60NE10 application, or STW60NE10 equivalent, this page delivers verified electrical specs, thermal resistance data (R_thj-case = 0.83 °C/W), avalanche energy rating (E_AS = 500 mJ), gate charge profile (Q_g = 142 nC), and real-world use context for solenoid control and motor drive designs.

Technical Context

This MOSFET employs ST's "Single Feature Size™" strip-based process to achieve high cell density and low on-resistance while maintaining robust unclamped inductive switching performance. Its 175 °C max junction temperature and 100% avalanche testing support operation in harsh automotive environments like ABS and airbag systems.

The device features a source-drain diode with 60 A continuous current rating, 1.5 V forward voltage at 60 A, and fast reverse recovery (t_rr = 170 ns, Q_rr = 1.02 µC) under 100 A/µs di/dt - enabling efficient synchronous rectification and snubberless inductive load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - supports 48 V and 24 V automotive bus systems with margin against transients
R_DS(on) typ.	0.016 Ω - enables ≤1.44 W conduction loss at 30 A, reducing heatsink requirements
I_D cont. @ T_c=25°C	60 A - rated for high-current solenoid and motor phase switching without derating
E_AS	500 mJ - withstands single-pulse inductive energy without failure in relay driver applications
dv/dt capability	9 V/ns - suppresses false triggering during fast voltage transients in noisy engine bays
Q_g	142 nC - determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers
R_thj-case	0.83 °C/W - allows direct mounting to heatsink for >100 W continuous dissipation at ΔT = 150 °C

Pinout & Package

TO-247 package: isolated tab (drain), three leads - pin 1 (gate), pin 2 (drain/tab), pin 3 (source). Mounting hole centered on drain tab for mechanical stability and thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10 V logic-level signal to fully enhance channel; threshold voltage 2–4 V ensures compatibility with 3.3 V and 5 V controllers
Pin 2 (Drain)	Main power output / heat sink interface	Connected to high-side switching node; tab must be electrically isolated and thermally coupled to heatsink
Pin 3 (Source)	Power return / reference node	Serves as local ground reference for gate drive; low-inductance layout required to minimize switching oscillation

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against inductive kickback in relay/solenoid drivers without external clamping
Exceptional dv/dt immunity (9 V/ns)	Prevents spurious turn-on during high-slew-rate transients in alternator or ignition circuits
Low R_DS(on) (0.016 Ω typ.)	Reduces conduction losses by >30% vs. comparable 100 V MOSFETs, improving efficiency in 48 V DC-DC stages
High I_D rating (60 A @ 25°C)	Supports peak currents in automotive window lifters and seat adjusters without parallel devices
Fast reverse recovery (t_rr = 170 ns)	Minimizes switching loss and EMI in half-bridge motor control when used as synchronous rectifier

Applications

Automotive Lamp Driver

Solenoid Control Module

Use Scenario: High-side switching of 12 V/55 W halogen headlamps in modern vehicle lighting systems.

IC Role / Device Role / Timing Role: Power switch controlling lamp current; handles 4.6 A steady-state and 10× inrush peaks.

Use Value: Avalanche rating and 175 °C junction rating ensure reliability across -40 °C to +125 °C ambient with no derating.

Use Scenario: Driving 24 V fuel injector coils requiring 1–2 ms pulse width and 5 A peak current.

IC Role / Device Role / Timing Role: Low-loss, fast-turn-off switch enabling precise fuel metering timing.

Use Value: 142 nC gate charge and 160 ns turn-off delay allow clean 1 kHz+ PWM control without shoot-through risk.

DC-DC Converter Primary Switch

Motor Phase Driver (BLDC)

Use Scenario: Primary-side switch in 48 V–12 V buck converter for ADAS domain controllers.

IC Role / Device Role / Timing Role: High-efficiency hard-switched transistor operating at 200 kHz with 30 A RMS current.

Use Value: 0.016 Ω R_DS(on) limits conduction loss to <1.5 W, enabling compact passive cooling.

Use Scenario: Low-side switch in 3-phase BLDC driver for HVAC blower motors (24 V, 30 A).

IC Role / Device Role / Timing Role: Synchronous rectifier with integrated body diode; commutates 60 A peak phase current.

Use Value: 1.5 V V_SD and 170 ns t_rr reduce freewheeling loss by 40% vs. discrete Schottky solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP460	R_DS(on) = 0.27 Ω (higher), Q_g = 140 nC, avalanche rated but not 100% tested	Lower current rating (20 A) requires paralleling for 60 A loads	Use only if legacy design compatibility outweighs efficiency loss
STW56NF20	V_DSS = 200 V, R_DS(on) = 0.022 Ω, same TO-247 package and gate drive	Better voltage margin for 48 V systems with high transient risk; higher R_DS(on) increases conduction loss	Select when system overvoltage exceeds 100 V but thermal budget permits 0.006 Ω penalty

Compared with IRFP460 and STW56NF20, STW60NE10 offers the lowest R_DS(on) at 100 V, enabling highest efficiency in space-constrained automotive modules - though its 100 V rating requires careful transient suppression in 48 V battery systems.

Availability

STW60NE10 is available at Aetrix Electronics and suitable for automotive lamp drivers, solenoid control modules, and DC-DC converter primary switches requiring stable component supply and long-term industrial availability.

Supply support for STW60NE10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, microcontroller, and sensor solutions for automotive, industrial, and consumer markets.

The STripFET™ power MOSFET product line targets high-reliability automotive and industrial switching applications, emphasizing ruggedness, low R_DS(on), and proven avalanche performance under real-world stress conditions.

FAQ

Is STW60NE10 suitable for synchronous rectification?

Yes - its source-drain diode has 60 A continuous rating, 1.5 V forward voltage at 60 A, and 170 ns reverse recovery time with 1.02 µC Q_rr, making it viable for low-frequency (<100 kHz) synchronous rectification in DC-DC converters where body diode conduction is unavoidable during dead-time.

What is the maximum safe gate-source voltage?

The absolute maximum V_GS is ±20 V per datasheet. Operation above ±15 V risks oxide degradation over time; recommended drive is 10 V for full enhancement with margin. Gate resistors ≥4.7 Ω are advised to damp ringing during fast switching.

Does STW60NE10 require a heatsink in 60 A continuous operation?

Yes - at 60 A and 0.016 Ω R_DS(on), conduction loss is ~57.6 W. With R_thj-case = 0.83 °C/W and max T_j = 175 °C, even at 25 °C case temperature, junction rise would exceed 150 °C. A heatsink maintaining T_c ≤ 70 °C is mandatory for continuous 60 A use.

Can STW60NE10 replace STW60N10F6 in existing designs?

No - STW60N10F6 is a 100 V, 60 A SuperFET III device with lower Q_g (72 nC) and improved E_oss, but STW60NE10 has higher Q_g (142 nC) and different SOA. Direct replacement may cause gate drive overload or reduced switching speed; layout and driver validation are required.

STW60NE10 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 22mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 185 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 180W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW60NE10 FAQ

1.How can I place an order for STW60NE10 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW60NE10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW60NE10 reliable?

The price and inventory of STW60NE10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW60NE10 is usually 5 days.

3.What payment methods are accepted for STW60NE10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW60NE10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW60NE10?

STW60NE10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW60NE10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW60NE10?

For technical support, including STW60NE10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW60NE10 requirements.

6.How does Aetrix verify that STW60NE10 is sourced from the original manufacturer or authorized distributors?

All STW60NE10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW60NE10 meets industry standards.

7.What is the process for return or replacement of STW60NE10?

All STW60NE10 units undergo pre-shipment inspection (PSI). If there is an issue with STW60NE10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW60NE10 part is unused and in its original packaging.

Return procedure for STW60NE10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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