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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW60NM50N

Name: STW60NM50N
Brand: STMicroelectronics
SKU: STW60NM50N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW60NM50N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW60NM50N.pdf

Description:: MOSFET N-CH 500V 68A TO247

Quantity:: RFQ Add To RFQ list

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Inventory:9,105

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Product details

Overview

STW60NM50N from STMicroelectronics is an N-channel 500 V, 68 A, 0.035 Ω R_DS(on) MDmesh™ II Power MOSFET in TO-247 package, designed for high-efficiency switching converters. It delivers low gate charge (178 nC), low input capacitance (5790 pF), and 100% avalanche tested ruggedness for industrial SMPS and PFC stages.

For engineers reviewing the STW60NM50N datasheet, STW60NM50N pinout, STW60NM50N application, or STW60NM50N equivalent, key selection criteria include its 500 V V_BR(DSS), 446 W power dissipation at T_C = 25 °C, 150 °C max junction temperature, and fast switching performance with 206 ns turn-on delay and 476 ns diode reverse recovery time.

Technical Context

This MOSFET employs ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its 0.035 Ω R_DS(on) at V_GS = 10 V and 34 A, combined with 95 nC Q_gd, enables high-frequency operation in hard-switched topologies while maintaining SOA integrity up to 272 A pulsed drain current.

The device integrates a robust body diode with 1.6 V forward voltage at 68 A and controlled reverse recovery (Q_rr = 10.5 nC, t_rr = 476 ns at T_j = 25 °C), reducing EMI and snubber stress in bridge configurations. Thermal resistance of 0.28 °C/W (j-case) supports high-power density thermal design.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	500 V - Withstands DC bus voltages up to 400 V in 3-phase rectified systems with margin
R_DS(on) max	0.043 Ω - Ensures <1.5 W conduction loss at 60 A continuous drain current
Q_g	178 nC - Determines gate drive power requirement and switching speed in 100–500 kHz converters
t_r/t_f	36 ns / 27.5 ns - Enables fast edge control to reduce switching transition losses
R_th(j-case)	0.28 °C/W - Allows direct heatsink mounting for 446 W total dissipation without derating below 100 °C case temp
E_AS	551 mJ - Supports unclamped inductive switching events without failure under defined test conditions
V_SD	1.6 V - Defines forward conduction loss during synchronous rectification or freewheeling

Pinout & Package

TO-247 package: 3-pin through-hole metal-can housing with isolated tab (drain-connected), standardized for high-power thermal and mechanical reliability. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; 2 Ω gate input resistance minimizes oscillation risk with standard gate drivers
Pin 2 (Drain / Tab)	High-side power node	Electrically connected to metal tab; requires insulated mounting when referenced to non-ground potentials
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; carries full load current and diode reverse recovery current

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness to 551 mJ, enabling reliable operation in inductive switching faults
Low gate charge (Q_g = 178 nC)	Reduces driver power consumption and allows use of cost-effective 1-A peak gate drivers at 300 kHz
Low C_iss (5790 pF)	Minimizes Miller effect, improving noise immunity and enabling stable high-dV/dt operation up to 15 V/ns
MDmesh™ II vertical structure	Achieves industry-leading R_DS(on) × Q_g figure-of-merit of 7.7 Ω·nC for optimized efficiency in telecom and server PSUs
TO-247 thermal performance	0.28 °C/W R_th(j-case) supports >400 W continuous output in forced-air-cooled 1U server power supplies

Applications

Industrial Switch-Mode Power Supplies

Telecom Rectifier Modules

Use Scenario: Primary-side switching in 3 kW three-phase PFC front-ends operating at 70–100 kHz.

IC Role / Device Role / Timing Role: High-voltage, high-current main switch handling 400–800 V DC link with 68 A RMS current.

Use Value: 0.035 Ω R_DS(on) and 178 nC Q_g jointly enable >98.2% efficiency at full load while meeting EN 61000-3-2 harmonic limits.

Use Scenario: Active clamp forward or LLC resonant converter in 48 V telecom rectifiers delivering 2.5 kW per board.

IC Role / Device Role / Timing Role: Synchronous rectifier or primary switch in zero-voltage switching topology requiring fast t_r/t_f and low Q_rr.

Use Value: 476 ns t_rr and 10.5 nC Q_rr reduce dead-time losses and improve ZVS window stability across line/load range.

Motor Drive Inverters

Uninterruptible Power Supplies

Use Scenario: 15–30 kW variable-frequency drives for HVAC compressors using 6-pack IGBT/MOSFET modules.

IC Role / Device Role / Timing Role: Discrete high-side switch in 3-phase inverter leg, operating with 120 °C case temperature.

Use Value: 43 A continuous ID at T_C = 100 °C and 150 °C T_j(max) ensure thermal headroom during overload transients without derating.

Use Scenario: Online double-conversion UPS inverters (10–20 kVA) with battery backup and pure sine-wave output.

IC Role / Device Role / Timing Role: Output H-bridge switch managing bidirectional energy flow between DC bus and AC output stage.

Use Value: 272 A pulsed I_DM and 551 mJ E_AS withstand short-circuit events during grid fault recovery without latch-up or destruction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH60N50L	Higher R_DS(on) (0.055 Ω), lower Q_g (120 nC), same V_BR(DSS) (500 V)	Better suited for higher-frequency ZVS designs where conduction loss is secondary to gate drive loss	Select when optimizing for >300 kHz operation with limited gate drive capability
IPP60R041C6	Lower R_DS(on) (0.041 Ω), higher C_iss (6200 pF), 650 V rating, Superjunction Gen 6	Offers higher voltage margin but increased Miller capacitance, requiring stronger gate drivers	Prefer for 400 V nominal systems needing long-term voltage derating or future-proofing

Compared with IXTH60N50L and IPP60R041C6, STW60NM50N provides the lowest R_DS(on) × Q_g product (7.7 Ω·nC), making it optimal for fixed-frequency hard-switched PFC and industrial SMPS where conduction and switching losses must both be minimized under 100–200 kHz operation.

Availability

STW60NM50N is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifier modules, motor drive inverters, and uninterruptible power supplies requiring stable component supply and long-lifecycle support.

Supply support for STW60NM50N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for industrial, automotive, and consumer markets.

STW60NM50N belongs to the MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in industrial and telecom infrastructure equipment.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW60NM50N supports 43 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-247 package and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load conditions.

Does this MOSFET require a negative gate turn-off voltage?

No. The STW60NM50N has a ±25 V gate-source voltage rating and operates reliably with 0 V to +10 V gate drive. A negative turn-off voltage is not required, though it may be used to improve noise immunity in high-dV/dt environments; the device's 2 Ω gate input resistance and low C_iss support clean switching with standard 0/+10 V drivers.

Can STW60NM50N replace STW60NM60 in existing designs?

No. STW60NM60 has a 600 V V_BR(DSS) and 0.045 Ω R_DS(on), whereas STW60NM50N is rated for 500 V and offers lower on-resistance (0.035 Ω). Substitution requires verification of system overvoltage margins and SOA compliance, especially in 400 V DC bus applications where 500 V rating provides only 25% margin versus 50% for 600 V devices.

Is the TO-247 package lead-free and RoHS compliant?

Yes. The STW60NM50N TO-247 package meets RoHS Directive 2011/65/EU requirements and is manufactured with lead-free terminations. ST's ECOPACK® documentation confirms full environmental compliance, including exemption 7a for high-melting-temperature solder alloys used in internal die attach.

STW60NM50N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 68A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 43mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 178 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 5790 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 446W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW60NM50N FAQ

1.How can I place an order for STW60NM50N through Aetrix?

Please submit a Request for Quotation (RFQ) for STW60NM50N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW60NM50N reliable?

The price and inventory of STW60NM50N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW60NM50N is usually 5 days.

3.What payment methods are accepted for STW60NM50N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW60NM50N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW60NM50N?

STW60NM50N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW60NM50N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW60NM50N?

For technical support, including STW60NM50N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW60NM50N requirements.

6.How does Aetrix verify that STW60NM50N is sourced from the original manufacturer or authorized distributors?

All STW60NM50N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW60NM50N meets industry standards.

7.What is the process for return or replacement of STW60NM50N?

All STW60NM50N units undergo pre-shipment inspection (PSI). If there is an issue with STW60NM50N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW60NM50N part is unused and in its original packaging.

Return procedure for STW60NM50N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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