Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW62NM60N

Name: STW62NM60N
Brand: STMicroelectronics
SKU: STW62NM60N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: STW62NM60N

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW62NM60N.pdf

Description:: MOSFET N-CH 600V 65A TO247

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:10

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

STW62NM60N from STMicroelectronics is an N-channel 600 V, 0.049 Ω max R_DS(on), 65 A continuous drain current MDmesh™ II Power MOSFET in TO-247 package. It delivers ultra-low gate charge (174 nC) and input capacitance (5800 pF), enabling high-efficiency hard-switching in industrial SMPS and solar inverters.

For engineers reviewing the STW62NM60N datasheet, STW62NM60N pinout, STW62NM60N application, or STW62NM60N equivalent, key selection criteria include avalanche ruggedness (480 mJ E_AS), thermal resistance (0.28 °C/W j-case), and diode recovery performance (470 ns t_rr at T_j = 25 °C).

Technical Context

This MOSFET employs ST's second-generation MDmesh™ vertical strip architecture to minimize conduction and switching losses simultaneously. Its 600 V V_DS rating and 150 °C max junction temperature support operation in high-voltage DC-link stages of offline converters and UPS systems.

The device integrates a fast-recovery body diode with 1.6 V forward voltage at 65 A and exhibits robust dv/dt immunity (15 V/ns) under clamped inductive switching. Gate threshold voltage (2–4 V) and low intrinsic gate resistance (2 Ω) ensure stable drive compatibility with standard 10 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V AC mains-derived DC bus with 50% safety margin
R_DS(on) max	0.049 Ω @ V_GS = 10 V, I_D = 32.5 A - enables <1.6 W conduction loss at 65 A
Q_g	174 nC - reduces gate driver power demand and switching transition time
E_AS	480 mJ - withstands unclamped inductive energy without failure in flyback or LLC resonant circuits
t_r/t_f	35 ns / 210 ns @ V_DD = 300 V, R_G = 4.7 Ω - enables >100 kHz hard-switching with controlled EMI
R_thj-case	0.28 °C/W - allows 450 W dissipation with ≤126 °C case-to-junction rise at full load
t_rr	470 ns @ I_SD = 65 A, di/dt = 100 A/µs - minimizes commutation loss in synchronous rectification

Pinout & Package

TO-247 package: isolated tab (drain), three-leaded through-hole outline with industry-standard mechanical dimensions (D = 20.0 mm, E = 15.6 mm, L = 14.5 mm). Drain connected to metal tab for direct heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Low-side return path; connects to PCB ground plane or source node of half-bridge
2 (Gate)	Control input	High-impedance MOS gate requiring <2 Ω series resistance to damp oscillation
3 (Drain)	Power output / High-voltage node	Internally bonded to metal tab; must be electrically isolated from heatsink unless floating topology

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 480 mJ without parameter shift or failure
Low C_iss and Q_g	5800 pF C_iss and 174 nC Q_g reduce switching loss and driver stress in high-frequency PFC
MDmesh™ II technology	Vertical superjunction structure achieves 0.049 Ω R_DS(on) at 600 V - 30% lower than prior-gen equivalents
Fast body diode	470 ns t_rr and 10 µC Q_rr enable efficient freewheeling in bridge-leg configurations

Applications

Industrial SMPS

Solar Inverters

Use Scenario: Primary-side switch in 3–5 kW telecom rectifiers and server PSUs operating at 70–100 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC input with zero-voltage switching assist.

Use Value: 0.049 Ω R_DS(on) limits conduction loss to <2.1 W at 65 A, improving full-load efficiency by ≥0.8% vs. legacy 600 V MOSFETs.

Use Scenario: DC-link switching stage in string inverters converting 600–1000 V PV array output to grid-synchronized AC.

IC Role / Device Role / Timing Role: Hard-switched N-channel switch in two-level or three-level NPC topologies.

Use Value: 150 °C T_j rating and 0.28 °C/W R_thj-case sustain 98.2% peak efficiency at 50 °C ambient without forced airflow.

UPS Systems

Induction Heating

Use Scenario: Bidirectional DC-DC converter in online double-conversion UPS managing battery charge/discharge and line regulation.

IC Role / Device Role / Timing Role: Synchronous rectifier and active clamp switch in phase-shifted full-bridge configuration.

Use Value: Body diode t_rr = 470 ns and Q_rr = 10 µC reduce reverse recovery loss by 35% compared to standard 600 V FETs.

Use Scenario: Half-bridge power stage in 2–5 kW domestic induction cooktops operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Main inverter switch driving resonant LC tank with high di/dt (>200 A/µs).

Use Value: 15 V/ns dv/dt immunity prevents spurious turn-on during fast voltage transitions across drain-source.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R041P7XKSA1	R_DS(on) = 0.041 Ω (lower), Q_g = 165 nC (lower), but V_DS = 600 V same; TO-220FP package (lower power dissipation capability)	Limited to ≤250 W continuous due to R_thj-amb = 40 °C/W vs. STW62NM60N's 0.28 °C/W j-case	Select when board space constraints prohibit TO-247 and thermal design uses small heatsink
IXFH60N60P	R_DS(on) = 0.055 Ω (higher), Q_g = 220 nC (higher), avalanche energy E_AS = 320 mJ (lower); TO-247 package same	Requires larger gate driver and derating above 100 kHz due to higher switching loss	Select when cost sensitivity outweighs efficiency targets and existing layout accommodates higher R_DS(on)

Compared with IPP60R041P7XKSA1 and IXFH60N60P, STW62NM60N offers optimal balance of low R_DS(on), low Q_g, and proven avalanche ruggedness in TO-247 - making it preferred for 3–6 kW industrial converters where thermal headroom and reliability are critical.

Availability

STW62NM60N is available at Aetrix Electronics and suitable for industrial SMPS, solar inverters, UPS systems, and induction heating equipment requiring stable component supply and long-term manufacturing continuity.

Supply support for STW62NM60N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ II Power MOSFET product line, engineered specifically for high-efficiency, high-voltage switching in offline power supplies and renewable energy inverters.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW62NM60N supports 41 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limitations of the TO-247 package and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load conditions.

Is the body diode suitable for synchronous rectification?

Yes - the integrated body diode has measured t_rr = 470 ns and Q_rr = 10 µC at 25 °C, with soft recovery characteristics confirmed in Figure 15. These parameters enable use in synchronous rectifier roles in LLC and phase-shifted full-bridge topologies without external Schottky supplementation.

Does STW62NM60N require a negative gate turn-off voltage?

No - the device operates reliably with 0 V to +10 V gate drive. The ±25 V V_GS absolute maximum rating permits brief negative transients, but no negative bias is required for robust turn-off. Standard 10 V logic-level gate drivers (e.g., IR2110, UCC27531) are fully compatible.

How does its avalanche rating compare to similar 600 V MOSFETs?

With E_AS = 480 mJ and I_AS = 10 A, STW62NM60N exceeds typical 600 V MOSFETs (E_AS ≈ 200–350 mJ). This is validated by 100% production avalanche testing per JEDEC JESD24-11, ensuring consistent ruggedness in unclamped inductive switching events common in PFC and motor drives.

STW62NM60N Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ II

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 49mOhm @ 32.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 174 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 5800 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 450W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW62NM60N FAQ

1.How can I place an order for STW62NM60N through Aetrix?

Please submit a Request for Quotation (RFQ) for STW62NM60N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW62NM60N reliable?

The price and inventory of STW62NM60N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW62NM60N is usually 5 days.

3.What payment methods are accepted for STW62NM60N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW62NM60N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW62NM60N?

STW62NM60N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW62NM60N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW62NM60N?

For technical support, including STW62NM60N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW62NM60N requirements.

6.How does Aetrix verify that STW62NM60N is sourced from the original manufacturer or authorized distributors?

All STW62NM60N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW62NM60N meets industry standards.

7.What is the process for return or replacement of STW62NM60N?

All STW62NM60N units undergo pre-shipment inspection (PSI). If there is an issue with STW62NM60N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW62NM60N part is unused and in its original packaging.

Return procedure for STW62NM60N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-03 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-01 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

2026-08-18 Operational Amplifier (Op Amp): Basics, Configurations, Feedback and Applications

Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

2026-08-14 Jumper Cables: How to Use, Connect and Choose Them Safely

Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…