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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW63N65DM2

Name: STW63N65DM2
Brand: STMicroelectronics
SKU: STW63N65DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW63N65DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW63N65DM2.pdf

Description:: MOSFET N-CH 650V 65A TO247

Quantity:: RFQ Add To RFQ list

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Inventory:4,880

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Product details

Overview

STW63N65DM2 from STMicroelectronics is a high-voltage N-channel MDmesh DM2 Power MOSFET in TO-247 package, rated 650 V V_DS, 42 mΩ typ. R_DS(on), and 60 A continuous drain current at T_C = 25 °C. It integrates a fast-recovery body diode (t_rr = 154 ns, Q_rr = 0.94 µC), ultra-low gate charge (Q_g = 120 nC), and 50 V/ns dv/dt ruggedness - engineered for ZVS phase-shift and full-bridge LLC resonant converters.

For engineers reviewing the STW63N65DM2 datasheet, STW63N65DM2 pinout, STW63N65DM2 application, or STW63N65DM2 equivalent, key selection criteria include its low C_iss/C_oss ratio (5500 pF / 210 pF), avalanche-rated robustness (E_AS = 1.1 J), and Zener-protected gate - critical for high-frequency, high-reliability SMPS designs.

Technical Context

This MOSFET employs ST's MDmesh DM2 silicon process, optimized to minimize Q_rr and t_rr without compromising R_DS(on) or voltage rating. Its 3.3 Ω intrinsic gate resistance and 58 nC Q_gd support clean switching with minimal Miller-induced oscillation in hard-switched bridges.

The device features 100% unclamped inductive switching (UIS) testing at I_AR = 6 A and E_AS = 1.1 J, with guaranteed 50 V/ns dv/dt immunity under specified conditions (V_DD ≤ 520 V). Thermal resistance R_thJC = 0.28 °C/W enables high-power density mounting on heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V AC input rectified systems with 20% margin for surge and ringing
R_DS(on) max	50 mΩ - ensures <1.8 W conduction loss at 60 A, enabling >98% efficiency in 3–5 kW PFC stages
Q_g	120 nC - reduces gate drive power requirement and allows use of lower-cost 1-A drivers
t_rr	154 ns @ T_J = 25 °C - minimizes diode recovery losses and EMI in synchronous rectification and bridge legs
dv/dt ruggedness	50 V/ns - prevents false turn-on during high-slew-rate commutation in half/full-bridge topologies
E_AS	1.1 J - provides single-pulse avalanche energy margin for transient overvoltage events in industrial UPS
R_thJC	0.28 °C/W - enables 446 W dissipation at ΔT = 125 °C, supporting compact thermal design without forced air

Pinout & Package

TO-247 package with isolated tab (drain-connected), standard 3-pin through-hole configuration. Mounting via M3 screw through central tab hole; requires electrically insulating thermal interface for non-drain-referenced heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal; accepts 10 V logic-level drive; Zener-protected ±25 V rating prevents ESD damage
2 (D, Tab)	Drain (exposed metal tab)	Main high-side power path; electrically connected to package tab - must be isolated unless system ground is drain-referenced
3 (S)	Source	Power return and gate reference node; ties to driver ground; carries full load current and diode reverse recovery current

Key Features

Feature	Design Value
Fast-recovery body diode	t_rr = 154 ns and Q_rr = 0.94 µC reduce switching loss and voltage overshoot in freewheeling paths
Low gate charge	Q_g = 120 nC and Q_gd = 58 nC enable faster turn-off and tighter dead-time control in phase-shifted full-bridge
Zener-protected gate	Integrated gate oxide protection withstands ±25 V transients - eliminates need for external gate clamping diodes
100% avalanche tested	Each unit validated for E_AS = 1.1 J at T_J = 25 °C - ensures field reliability under inductive fault conditions
High dv/dt ruggedness	50 V/ns rating verified per JEDEC JESD22-A114 - prevents spurious turn-on in high-speed hard-switched inverters

Applications

Industrial UPS Inverter Stage

Server PSU LLC Resonant Converter

Use Scenario: High-efficiency 3–5 kVA online UPS delivering clean sine-wave output under dynamic load steps and battery-backup transitions.

IC Role / Device Role / Timing Role: Primary-side high-side switch in full-bridge LLC resonant topology operating at 200–500 kHz.

Use Value: Low Q_rr and soft-recovery diode minimize body-diode conduction loss during zero-voltage switching transitions, improving full-load efficiency by ≥0.5%.

Use Scenario: 1.5 kW redundant server power supply requiring >96% efficiency at 50% load and high MTBF.

IC Role / Device Role / Timing Role: Upper-leg switch in asymmetric half-bridge LLC primary, handling 60 A peak current with 520 V bus.

Use Value: 42 mΩ R_DS(on) and 0.28 °C/W R_thJC allow natural-convection cooling in dense 1U form factor while maintaining T_J < 110 °C.

Solar Microinverter DC-AC Stage

EV Onboard Charger PFC Stage

Use Scenario: Single-phase 300–500 W microinverter converting PV panel output to grid-synchronized AC with reactive power support.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost PFC + H-bridge inverter, switching at 100 kHz.

Use Value: 50 V/ns dv/dt immunity prevents false triggering during rapid bus voltage transitions caused by grid harmonics and islanding detection pulses.

Use Scenario: 6.6 kW bidirectional OBC in EVs performing AC/DC charging and vehicle-to-grid (V2G) operation.

IC Role / Device Role / Timing Role: Switch in totem-pole PFC front-end, conducting 38 A continuous at T_C = 100 °C.

Use Value: 100% UIS-tested avalanche capability handles line surges and regenerative energy spikes during V2G mode without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH60N65X2	R_DS(on) = 42 mΩ (same typ.), but Q_g = 145 nC and t_rr = 220 ns - higher switching loss and EMI risk	Lacks Zener gate protection; requires external clamping; not 100% avalanche tested per unit	Prefer when cost sensitivity outweighs efficiency and robustness requirements in non-critical industrial SMPS
IPP65R045C7	R_DS(on) = 45 mΩ, Q_g = 105 nC, t_rr = 130 ns - slightly lower Q_g but no dv/dt rating published	No specified dv/dt ruggedness or UIS test data; limited to ≤300 kHz due to higher C_oss (320 pF)	Consider only in fixed-frequency hard-switched PFC where dv/dt stress is low and gate drive is highly optimized

Compared with IXTH60N65X2 and IPP65R045C7, STW63N65DM2 delivers superior system-level reliability via guaranteed dv/dt immunity and per-unit avalanche validation - critical for mission-critical 24/7 power systems where field failure cost exceeds component cost.

Availability

STW63N65DM2 is available at Aetrix Electronics and suitable for industrial UPS inverter stages, server PSU LLC resonant converters, and EV onboard charger PFC stages requiring stable component supply across multi-year production cycles.

Supply support for STW63N65DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MEMS, power, and microcontroller solutions for automotive, industrial, and consumer markets.

STW63N65DM2 belongs to the MDmesh DM2 series - a family of high-voltage superjunction MOSFETs specifically engineered for high-frequency, high-efficiency resonant and soft-switching power conversion topologies.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies R_G = 4.7 Ω for switching time characterization. For hard-switched applications above 100 kHz, R_G should be 5–10 Ω to balance dV/dt control and switching loss. Lower values (<3 Ω) increase risk of gate ringing and overshoot; higher values (>15 Ω) extend t_d(off) beyond 114 ns and raise Q_g-related losses.

Can STW63N65DM2 replace STW63N65M2 in existing designs?

Yes, STW63N65DM2 is a direct upgrade to STW63N65M2, offering identical pinout and voltage/current ratings but improved Q_rr (0.94 µC vs. 1.7 µC), lower t_rr (154 ns vs. 250 ns), and enhanced dv/dt ruggedness (50 V/ns vs. unspecified). No layout or drive changes are required.

Is the TO-247 tab electrically isolated from the source or gate?

No - the TO-247 tab is internally connected to the drain (pin 2). It is not isolated; therefore, mechanical mounting to a heatsink requires either a conductive thermal interface (making heatsink drain-referenced) or an electrically isolating pad (e.g., silicone-based insulator with ≤0.25 mm thickness and k ≥ 1.5 W/m·K).

Does STW63N65DM2 support synchronous rectification in secondary-side applications?

No - it is a high-side N-channel MOSFET designed for primary-side switching. Its body diode is optimized for fast recovery in high-voltage freewheeling, not low-V_F conduction. For synchronous rectification, ST recommends dedicated low-V_DS devices like STL110N10F7 or STP110N10F7.

STW63N65DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 446W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW63N65DM2 FAQ

1.How can I place an order for STW63N65DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW63N65DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW63N65DM2 reliable?

The price and inventory of STW63N65DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW63N65DM2 is usually 5 days.

3.What payment methods are accepted for STW63N65DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW63N65DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW63N65DM2?

STW63N65DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW63N65DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW63N65DM2?

For technical support, including STW63N65DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW63N65DM2 requirements.

6.How does Aetrix verify that STW63N65DM2 is sourced from the original manufacturer or authorized distributors?

All STW63N65DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW63N65DM2 meets industry standards.

7.What is the process for return or replacement of STW63N65DM2?

All STW63N65DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STW63N65DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW63N65DM2 part is unused and in its original packaging.

Return procedure for STW63N65DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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