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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW65N65DM2AG

Name: STW65N65DM2AG
Brand: STMicroelectronics
SKU: STW65N65DM2AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW65N65DM2AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW65N65DM2AG.pdf

Description:: MOSFET N-CH 650V 60A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW65N65DM2AG from STMicroelectronics is an AEC-Q101 qualified N-channel 650 V, 42 mΩ typ. (50 mΩ max), 60 A high-voltage Power MOSFET in TO-247 package, featuring fast-recovery body diode (trr = 154 ns @ 25 °C), ultra-low Qg (120 nC), and 50 V/ns dv/dt ruggedness. It is engineered for ZVS phase-shift and bridge-mode converters in automotive and industrial power supplies.

For engineers reviewing the STW65N65DM2AG datasheet, STW65N65DM2AG pinout, STW65N65DM2AG application, or STW65N65DM2AG equivalent, key selection criteria include RDS(on) vs. temperature stability, avalanche energy rating (EAS = 1.1 J), diode recovery performance (Qrr = 0.94 µC), and gate charge profile for soft-switching optimization.

Technical Context

This MDmesh DM2 device integrates a Zener-protected gate and optimized cell structure to achieve simultaneous low conduction loss (RDS(on) = 42 mΩ typ.) and fast, low-charge body diode recovery (Qrr = 0.94 µC, trr = 154 ns). Its 50 V/ns dv/dt ruggedness and 100% unclamped inductive switching (UIS) tested operation support robust hard- and soft-switching topologies.

The MOSFET delivers stable threshold voltage (VGS(th) = 3–5 V) and on-resistance across -55 °C to 150 °C junction range, with normalized RDS(on) drift < 2.2× at TJ = 150 °C. Its Ciss = 5500 pF and Crss = 3 pF enable precise gate drive design for high-frequency (>100 kHz) resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports DC bus voltages up to 520 V in full-bridge ZVS designs without derating
R_DS(on) max	50 mΩ - Enables ≤ 1.8 W conduction loss at 60 A, TC = 25 °C
Q_g	120 nC - Determines gate driver current requirement (~2.5 A peak for 50 ns turn-on)
trr	154 ns @ 25 °C - Reduces switching loss and EMI in synchronous rectification and LLC phases
E_AS	1.1 J - Guarantees single-pulse avalanche survivability under transient overvoltage conditions
dv/dt ruggedness	50 V/ns - Prevents spurious turn-on during high-slew-rate commutation in half-bridge legs
Thermal R_thJC	0.28 °C/W - Allows 446 W dissipation at TC = 25 °C; enables compact heatsink sizing

Pinout & Package

TO-247 package: isolated tab (Drain), 3-pin through-hole outline with metal tab for thermal and electrical connection to Drain. Standard mounting via M3 screw through central hole (ØP = 3.6 mm).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires low-impedance drive (R_g = 3.3 Ω intrinsic) to manage 120 nC charge
2 (D / Tab)	Drain	Main high-side power terminal; electrically and thermally connected to metal tab; must be insulated from heatsink unless referenced to same potential
3 (S)	Source	Power return and gate reference node; critical for noise immunity in high-dv/dt switching

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and charging systems per stress test requirements (HTOL, TC, UHAST)
Fast-recovery body diode	Qrr = 0.94 µC and trr = 154 ns enable efficient synchronous operation without external SiC diode
Extremely low Q_g and C_iss	120 nC total gate charge and 5500 pF input capacitance reduce driver losses and simplify gate drive design
Zener-protected gate	Integrated gate oxide protection withstands ±25 V V_GS transients without external clamping
100% avalanche tested	Each unit validated for UIS capability at I_AR = 8 A, ensuring field reliability in inductive fault conditions

Applications

Automotive On-Board Charger (OBC)

Industrial AC-DC Server PSU

Use Scenario: Bidirectional 6.6 kW OBC operating in dual-phase interleaved PFC + CLLC resonant DC-DC stage.

IC Role / Device Role / Timing Role: High-side switch in CLLC half-bridge; handles 520 V DC link with ZVS at 200–350 kHz.

Use Value: Low Qrr (0.94 µC) minimizes diode reverse recovery loss; 50 V/ns dv/dt rating prevents false triggering during fast transitions.

Use Scenario: 3 kW telecom rectifier using asymmetric half-bridge topology with active clamp.

IC Role / Device Role / Timing Role: Main switching FET in primary-side bridge leg; rated for continuous 60 A conduction at 100 °C case temperature.

Use Value: R_DS(on) = 42 mΩ typ. reduces conduction loss by >15% vs. legacy 650 V superjunction MOSFETs; 0.28 °C/W R_thJC supports forced-air cooling.

Solar Microinverter H-Bridge

EV DC Fast Charging Module

Use Scenario: Single-phase 300–600 VAC grid-tied microinverter with transformerless topology.

IC Role / Device Role / Timing Role: High-voltage leg switch in H-bridge output stage; subjected to repetitive 650 V blocking and 60 A peak current.

Use Value: 100% UIS-tested EAS = 1.1 J ensures survival during grid voltage surges; AEC-Q101 qualification adds long-term reliability margin.

Use Scenario: 20 kW liquid-cooled DC charging module using dual-phase interleaved LLC with 800 V nominal bus.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier FET in LLC transformer output; operates with body diode conduction during dead-time.

Use Value: Fast trr = 154 ns and low V_SD = 1.6 V minimize dead-time loss and thermal stress in high-current rectification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7XKSA1	R_DS(on) = 41 mΩ, Q_g = 112 nC, trr = 130 ns; CoolMOS CFD7, no AEC-Q101	Higher efficiency in 100–300 kHz hard-switched PFC; not qualified for automotive safety-critical use	Select when maximum efficiency at light load dominates; avoid where automotive qualification is mandatory
IXTH60N65X2	R_DS(on) = 42 mΩ, Q_g = 135 nC, trr = 220 ns; HiPerFET X2, no integrated Zener, non-automotive	Higher gate charge increases driver loss; slower diode recovery raises EMI risk in ZVS circuits	Prefer for cost-sensitive industrial SMPS where diode speed is less critical than gate drive simplicity

Compared with IPW65R041CFD7XKSA1 and IXTH60N65X2, STW65N65DM2AG uniquely combines AEC-Q101 compliance, Zener gate protection, and best-in-class Qrr/trr trade-off-making it optimal for automotive-grade ZVS and bridge converters where reliability and diode performance are co-critical.

Availability

STW65N65DM2AG is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial server PSUs, solar microinverters, and EV DC fast charging modules requiring stable component supply and long-lifecycle support.

Supply support for STW65N65DM2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, analog, MEMS, and microcontroller solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh DM2 series-designed specifically for high-efficiency, high-frequency resonant and soft-switching power converters demanding low Qrr, low RDS(on), and robust avalanche capability.

FAQ

Is STW65N65DM2AG suitable for zero-voltage switching (ZVS) topologies?

Yes. Its fast-recovery body diode (trr = 154 ns, Qrr = 0.94 µC), low Crss (3 pF), and 50 V/ns dv/dt ruggedness make it ideal for ZVS phase-shift full-bridge and LLC resonant converters. The low Qg (120 nC) also reduces gate drive losses during high-frequency soft-switching operation.

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current ID is 38 A at TC = 100 °C, as specified in Table 1 of DS11178 Rev 2. This rating accounts for thermal derating due to junction-to-case resistance (RthJC = 0.28 °C/W) and safe operating area (SOA) limits.

Does STW65N65DM2AG require external gate protection?

No. It features an integrated Zener-protected gate structure rated for ±25 V VGS, eliminating the need for external gate clamping diodes in most applications. However, proper PCB layout (short gate traces, local decoupling) remains essential to maintain dv/dt immunity.

How does its body diode performance compare to standard 650 V superjunction MOSFETs?

It delivers significantly lower Qrr (0.94 µC vs. typical 2–4 µC) and shorter trr (154 ns vs. 250–500 ns) due to MDmesh DM2's optimized epitaxial layer and tailored body diode doping. This reduces reverse recovery loss by >60% and enables higher-frequency operation without snubbers.

STW65N65DM2AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 5500 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 446W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW65N65DM2AG FAQ

1.How can I place an order for STW65N65DM2AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STW65N65DM2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW65N65DM2AG reliable?

The price and inventory of STW65N65DM2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW65N65DM2AG is usually 5 days.

3.What payment methods are accepted for STW65N65DM2AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW65N65DM2AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW65N65DM2AG?

STW65N65DM2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW65N65DM2AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW65N65DM2AG?

For technical support, including STW65N65DM2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW65N65DM2AG requirements.

6.How does Aetrix verify that STW65N65DM2AG is sourced from the original manufacturer or authorized distributors?

All STW65N65DM2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW65N65DM2AG meets industry standards.

7.What is the process for return or replacement of STW65N65DM2AG?

All STW65N65DM2AG units undergo pre-shipment inspection (PSI). If there is an issue with STW65N65DM2AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW65N65DM2AG part is unused and in its original packaging.

Return procedure for STW65N65DM2AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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