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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW65N80K5

Name: STW65N80K5
Brand: STMicroelectronics
SKU: STW65N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW65N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW65N80K5.pdf

Description:: MOSFET N-CH 800V 46A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW65N80K5 from STMicroelectronics is an 800 V, 46 A N-channel power MOSFET in TO-247 package, fabricated with MDmesh K5 vertical structure technology. It delivers 70 mΩ typical R_DS(on), 92 nC total gate charge, and 100% avalanche-tested ruggedness for high-voltage switching in industrial SMPS, PFC stages, and HV DC-DC converters.

For engineers reviewing the STW65N80K5 datasheet, STW65N80K5 pinout, STW65N80K5 application, or STW65N80K5 equivalent, key selection criteria include its ultra-low FoM (R_DS(on) × Q_g = 6.44 Ω·nC), Zener-protected gate, 50 V/ns MOSFET dv/dt ruggedness, and 700 mJ single-pulse avalanche energy at T_J = 25 °C.

Technical Context

This device implements ST's MDmesh K5 proprietary vertical superjunction architecture to minimize both conduction loss and switching loss simultaneously. Its 3230 pF input capacitance and 3 pF reverse transfer capacitance enable fast, controllable turn-on/turn-off with low EMI generation under hard-switching conditions.

The integrated body diode features 650 ns typical reverse recovery time at 46 A and 100 A/µs di/dt, with soft recovery characteristics confirmed by 20 µC Q_rr and 60 A I_RRM. The 0.28 °C/W junction-to-case thermal resistance supports high-power operation up to 446 W at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands full mains-derived DC bus voltages in 400 V AC input systems with margin.
R_DS(on) max	80 mΩ - Enables <1.7 W conduction loss at 46 A, critical for >98% efficiency in high-current PFC stages.
Q_g	92 nC - Ultra-low gate charge reduces driver power demand and enables use of compact gate drivers.
E_AS	700 mJ - Confirmed single-pulse avalanche capability allows reliable unclamped inductive switching without snubbers.
dv/dt ruggedness	50 V/ns - Sustains rapid voltage transients during hard commutation without spurious turn-on.
T_J max	150 °C - Rated for continuous operation in enclosed industrial environments with forced-air cooling.
C_iss	3230 pF - Low input capacitance improves gate drive efficiency and reduces Miller-induced oscillation risk.

Pinout & Package

TO-247 package with isolated tab (drain-connected metal flange), 3-pin through-hole configuration. Mounting surface provides direct thermal path to heatsink; drain tab electrically tied to pin 2.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 10 V logic-level drive; ±30 V absolute max rating protects against transient overvoltage.
Pin 2 (D / TAB)	Drain (with exposed metal tab)	Main high-side current path; tab must be electrically insulated from heatsink unless system ground reference permits direct connection.
Pin 3 (S)	Source	Reference node for gate drive and current sensing; connects to low-side return path in half-bridge configurations.

Key Features

Feature	Design Value
MDmesh K5 vertical structure	Reduces R_DS(on) × Q_g FoM to 6.44 Ω·nC-enabling higher power density than prior-generation 800 V MOSFETs.
Zener-protected gate	Integrated gate-source Zener clamps transients to ±20 V, eliminating need for external gate protection components.
100% avalanche tested	Every unit undergoes production-line unclamped inductive switching test at I_AR = 16 A, ensuring field reliability in flyback and resonant topologies.
Soft-recovery body diode	Q_rr = 20 µC and trr = 650 ns at 46 A/100 A/µs - minimizes diode switching loss and EMI in bridge-leg freewheeling paths.
ECOPACK® compliant	Meets RoHS and halogen-free requirements per ST's environmental grade definitions; no lead or brominated flame retardants.

Applications

Industrial Switch-Mode Power Supplies

Active PFC Front-Ends

Use Scenario: High-efficiency 3–5 kW offline SMPS using two-transistor forward or LLC resonant topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400–800 V DC bus with 46 A peak current.

Use Value: 70 mΩ R_DS(on) and 92 nC Q_g reduce conduction + switching losses, enabling >96% full-load efficiency at 100 kHz.

Use Scenario: Boost-type active PFC stage in telecom rectifiers and server PSUs.

IC Role / Device Role / Timing Role: Main switching element operating in continuous conduction mode (CCM) at 65–100 kHz.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during zero-crossing transitions; 700 mJ E_AS absorbs inductive kickback safely.

High-Voltage DC-DC Converters

Motor Drive Inverter Stages

Use Scenario: Isolated 1 kV output DC-DC for EV charging infrastructure and industrial battery systems.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in phase-shifted full-bridge.

Use Value: 800 V V_DS rating supports 1000 V isolation barriers; 0.28 °C/W R_thJC enables direct heatsink mounting for 446 W dissipation.

Use Scenario: 3-phase inverter driving 400 V AC induction motors in HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: High-side switch in 650 V DC-link inverter leg with 46 A RMS current capability.

Use Value: Soft-recovery body diode (trr = 650 ns) reduces shoot-through risk during commutation; Zener gate protection withstands motor back-EMF transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH65N80L	Higher R_DS(on) (95 mΩ typ.), lower Q_g (72 nC), same 800 V rating, TO-247 package.	Lower conduction loss penalty at light load due to reduced Q_g; less suitable for high-current PFC where R_DS(on) dominates loss.	Prefer when gate drive loss dominates and peak current ≤35 A; verify SOA at 100 °C case temperature.
IPP65R80CFD7	800 V rating, 80 mΩ R_DS(on), but 110 nC Q_g; includes fast-recovery co-packaged diode (Q_rr = 12 µC).	Better diode performance for synchronous rectification; higher switching loss due to increased Q_g.	Select when body-diode reverse recovery is critical (e.g., LLC secondary); avoid in high-frequency PFC where Q_g drives driver loss.

Compared with IXTH65N80L and IPP65R80CFD7, STW65N80K5 offers the lowest FoM (6.44 Ω·nC) and highest avalanche robustness (700 mJ), making it optimal for high-current, high-reliability industrial SMPS where both conduction efficiency and fault tolerance are prioritized.

Availability

STW65N80K5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, active PFC front-ends, and high-voltage DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for STW65N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs.

This device belongs to ST's MDmesh™ K5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability industrial power conversion systems operating at 600–900 V DC bus levels.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW65N80K5 supports 30 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS10979 Rev 3. This derating reflects thermal limitations of the TO-247 package and ensures safe operation within the SOA curve up to 10 ms pulse width at that temperature.

Does this MOSFET require external gate protection?

No external gate protection is required. The device integrates a Zener diode between gate and source rated for ±20 V clamping, validated per ST's internal qualification standards. This eliminates discrete Zener placement while maintaining ±30 V absolute maximum V_GS rating.

How is avalanche ruggedness verified for STW65N80K5?

Each unit undergoes 100% production-line unclamped inductive switching (UIS) testing at I_AR = 16 A, V_DD = 50 V, and T_J = 25 °C, delivering 700 mJ single-pulse avalanche energy. Test compliance is documented in Section 3 of DS10979 and confirmed via on-wafer process controls.

Can STW65N80K5 replace older STW65N80K3 in existing designs?

Yes-STW65N80K5 is a direct drop-in replacement for STW65N80K3 with identical pinout, package, and voltage rating. It improves R_DS(on) (70 mΩ vs. 85 mΩ typ.) and reduces Q_g (92 nC vs. 105 nC), yielding measurable efficiency gains without layout or drive circuit changes.

STW65N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 46A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 23A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 92 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 3230 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 446W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW65N80K5 FAQ

1.How can I place an order for STW65N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW65N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW65N80K5 reliable?

The price and inventory of STW65N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW65N80K5 is usually 5 days.

3.What payment methods are accepted for STW65N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW65N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW65N80K5?

STW65N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW65N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW65N80K5?

For technical support, including STW65N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW65N80K5 requirements.

6.How does Aetrix verify that STW65N80K5 is sourced from the original manufacturer or authorized distributors?

All STW65N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW65N80K5 meets industry standards.

7.What is the process for return or replacement of STW65N80K5?

All STW65N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STW65N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW65N80K5 part is unused and in its original packaging.

Return procedure for STW65N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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