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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW68N60M6

Name: STW68N60M6
Brand: STMicroelectronics
SKU: STW68N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW68N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW68N60M6.pdf

Description:: MOSFET N-CH 600V TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW68N60M6 from STMicroelectronics is an N-channel 600 V, 63 A MDmesh M6 superjunction power MOSFET in TO-247 package, featuring 35 mΩ typ. R_DS(on), 106 nC total gate charge, and 100 V/ns MOSFET dv/dt ruggedness. It delivers low conduction loss and fast switching for high-efficiency LLC and boost PFC converters operating at 100–300 kHz.

For engineers reviewing the STW68N60M6 datasheet, STW68N60M6 pinout, STW68N60M6 application, or STW68N60M6 equivalent, key selection criteria include avalanche energy rating (1100 mJ), Zener-protected gate, 150 °C max junction temperature, and TO-247 thermal resistance (0.32 °C/W).

Technical Context

This MOSFET employs ST's MDmesh M6 technology, optimizing R_DS(on)/area and dynamic performance via reduced Crss (13 pF) and Coss eq. (713 pF), enabling hard-switched and resonant topologies with minimal voltage overshoot. Its 1.6 Ω intrinsic gate resistance supports stable gate drive without excessive damping.

The device integrates a robust body diode with 308 ns trr (Tj = 25 °C) and 4.3 µC Qrr, validated for continuous conduction mode operation in PFC stages. Avalanche testing ensures reliability under unclamped inductive switching up to 7.5 A repetitive I_AR.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in industrial PFC and LLC designs
R_DS(on) max	41 mΩ - Enables <1.5 W conduction loss at 31.5 A, reducing heatsink requirements
I_D (TC = 25 °C)	63 A - Supports high-current primary-side switching in 1–3 kW power supplies
Q_g	106 nC - Determines gate driver power demand and switching speed in 100–500 kHz applications
E_AS	1100 mJ - Guarantees single-pulse avalanche survivability during transient overvoltage events
dv/dt ruggedness	100 V/ns - Prevents spurious turn-on in high-di/dt environments like motor drives and inverters
R_thJC	0.32 °C/W - Allows >300 W dissipation with standard TO-247 heatsinking at TC = 25 °C

Pinout & Package

Supplied in TO-247 package with isolated tab (Drain-connected), offering high thermal conductivity and mechanical robustness for high-power switching. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate control terminal	Low input capacitance (4360 pF Ciss) enables efficient driving with standard 1–2 A gate drivers
Pin 2 (D / Tab)	Drain connection (exposed metal tab)	Electrically tied to drain; requires insulated mounting in PCB layout to avoid short circuits
Pin 3 (S)	Source reference node	Serves as return path for load current and gate drive loop; critical for minimizing parasitic inductance

Key Features

Feature	Design Value
MDmesh M6 silicon process	Delivers 20% lower R_DS(on)/area vs. prior MDmesh generations, improving power density
Zener-protected gate	±25 V gate-source rating with integrated protection prevents ESD-induced gate oxide failure
100% avalanche tested	Each unit validated for unclamped inductive switching, ensuring field reliability in harsh transients
Low Crss (13 pF)	Reduces Miller effect, enabling cleaner turn-off and higher immunity to voltage spikes
Optimized body diode	308 ns trr and soft recovery reduce EMI and snubber losses in PFC and synchronous rectification

Applications

Server PSU Primary Switch

Industrial Boost PFC Stage

Use Scenario: High-efficiency 2 kW server power supply operating in continuous conduction mode with 380 V DC bus.

IC Role / Device Role / Timing Role: Primary-side high-side switch in interleaved boost PFC converter running at 100 kHz.

Use Value: 35 mΩ R_DS(on) and 1100 mJ E_AS enable >98.5% efficiency while surviving line surges per IEC 61000-4-5.

Use Scenario: 3-phase industrial motor drive front-end with active harmonic correction.

IC Role / Device Role / Timing Role: Fast-switching boost switch in 12 kW three-phase PFC module operating at 25 kHz.

Use Value: 100 V/ns dv/dt ruggedness prevents false triggering during rapid bus voltage transitions under load transients.

LLC Resonant Converter

Telecom Rectifier Module

Use Scenario: 1.5 kW telecom rectifier using asymmetric half-bridge LLC topology with 300–400 kHz switching.

IC Role / Device Role / Timing Role: Low-loss synchronous rectifier replacement in secondary-side full-bridge configuration.

Use Value: 1.6 V V_SD forward drop and 308 ns trr minimize conduction and recovery losses, improving light-load efficiency.

Use Scenario: 48 V/50 A telecom rectifier with hold-up time requirement and high ambient temperature operation.

IC Role / Device Role / Timing Role: Primary-side switching element in phase-shifted full-bridge topology with ZVS capability.

Use Value: 0.32 °C/W R_thJC allows sustained 63 A operation at 85 °C case temperature without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH60N60L2	R_DS(on) = 45 mΩ, Q_g = 120 nC, no Zener gate protection	Higher gate charge increases driver loss; lacks integrated gate protection	Preferred where cost sensitivity outweighs gate robustness and 15% higher conduction loss is acceptable
IPP60R190C7	R_DS(on) = 190 mΩ, Q_g = 42 nC, 650 V rating, CoolMOS C7 process	Lower voltage rating (650 V) and higher R_DS(on) limit use to ≤400 V bus systems	Selected when faster switching (lower Q_g) and lower EMI are prioritized over conduction loss in <1 kW designs

Compared with IXTH60N60L2 and IPP60R190C7, STW68N60M6 offers superior R_DS(on)/voltage ratio and guaranteed avalanche capability-critical for industrial PFC and LLC where bus stress and reliability dominate trade-offs.

Availability

STW68N60M6 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, telecom rectifiers, and LLC resonant converters requiring stable component supply across multi-year production cycles.

Supply support for STW68N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, specializing in power management, microcontrollers, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh M6 power MOSFET product line, engineered specifically for high-frequency, high-efficiency AC-DC and DC-DC conversion in data center, telecom, and industrial power supplies.

FAQ

What is the maximum recommended gate drive voltage for STW68N60M6?

The absolute maximum gate-source voltage is ±25 V, but ST recommends operating within 10–15 V for optimal R_DS(on) and safe margin against overshoot. Driving above 15 V yields diminishing R_DS(on) improvement while increasing risk of gate oxide stress during transients.

Does STW68N60M6 require a negative gate voltage for reliable turn-off?

No. The device features a 3.25–4.75 V gate threshold and is designed for zero-to-positive gate drive (0 V/10 V or 0 V/12 V). Negative bias is unnecessary and not specified in the datasheet; standard unipolar gate drivers suffice.

How does the body diode performance compare to discrete Schottky solutions in PFC applications?

Its body diode has 308 ns trr and 4.3 µC Qrr at 25 °C-significantly better than legacy SJ MOSFETs but higher Qrr than co-packaged SiC Schottkys. It eliminates external diode cost in non-critical PFC stages but is not recommended for ultra-high-frequency (>500 kHz) or zero-voltage-switching-only designs.

Can STW68N60M6 be paralleled for higher current handling?

Yes-its positive temperature coefficient for R_DS(on) (see Figure 9) ensures inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling. Derating to 80% of total rated current per device is advised for long-term reliability.

STW68N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 0V, 10V

Rds On (Max) @ Id, Vgs:: 41mOhm @ 31.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 106 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 4360 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 390W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW68N60M6 FAQ

1.How can I place an order for STW68N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW68N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW68N60M6 reliable?

The price and inventory of STW68N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW68N60M6 is usually 5 days.

3.What payment methods are accepted for STW68N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW68N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW68N60M6?

STW68N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW68N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW68N60M6?

For technical support, including STW68N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW68N60M6 requirements.

6.How does Aetrix verify that STW68N60M6 is sourced from the original manufacturer or authorized distributors?

All STW68N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW68N60M6 meets industry standards.

7.What is the process for return or replacement of STW68N60M6?

All STW68N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STW68N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW68N60M6 part is unused and in its original packaging.

Return procedure for STW68N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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