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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW68N65DM6-4AG

Name: STW68N65DM6-4AG
Brand: STMicroelectronics
SKU: STW68N65DM6-4AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW68N65DM6-4AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: STW68N65DM6-4AG.pdf

Description:: MOSFET N-CH 650V 72A TO247-4

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Product details

Overview

STW68N65DM6-4AG from STMicroelectronics is an AEC-Q101 qualified N-channel 650 V, 33 mΩ typ. (39 mΩ max.) high-voltage Power MOSFET in TO247-4 package, featuring fast-recovery body diode, 100% avalanche tested ruggedness, and Zener-protected gate. It delivers 72 A continuous drain current at T_C = 25 °C and enables high-efficiency bridge topologies and ZVS phase-shift converters.

For engineers reviewing the STW68N65DM6-4AG datasheet, STW68N65DM6-4AG pinout, STW68N65DM6-4AG application, or STW68N65DM6-4AG equivalent, key selection criteria include R_DS(on) per area improvement over prior MDmesh generations, dv/dt ruggedness (100 V/ns), low Q_g (118 nC), fast trr (142 ns @ TJ = 25 °C), and the dedicated driver source pin for optimized gate driving.

Technical Context

This MDmesh DM6-series MOSFET integrates a fast-recovery body diode with ultra-low Q_rr (0.9 µC typ.) and trr (142 ns) to minimize switching losses in hard- and soft-switching topologies. Its extra driver source pin reduces common-source inductance, enabling precise control of turn-on/turn-off dynamics.

The device achieves 33 mΩ typical R_DS(on) at V_GS = 10 V and ID = 36 A while maintaining 100 V/ns dv/dt ruggedness and 1000 A/µs di/dt capability during diode recovery-critical for high-frequency, high-reliability automotive and industrial power conversion.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 400 V in full-bridge ZVS designs with margin.
R_DS(on) max.	39 mΩ - Enables <1.5 W conduction loss at 72 A, supporting high-current, low-loss operation.
Q_g	118 nC - Low gate charge reduces driver power demand and improves switching efficiency at >100 kHz.
trr	142 ns - Fast reverse recovery minimizes commutation losses and EMI in synchronous rectification.
dv/dt ruggedness	100 V/ns - Sustains rapid voltage transients without spurious turn-on in high-dV/dt environments.
E_AS	1.9 J - Robust unclamped inductive switching capability supports reliable operation under fault conditions.
R_thJC	0.26 °C/W - Enables high-power dissipation (480 W at T_C = 25 °C) with minimal junction-to-case thermal rise.

Pinout & Package

TO247-4 package with isolated tab (Drain), standard Gate, dedicated Driver Source (pin 3), and Power Source (pin 2). The fourth pin decouples gate drive return from high-current source path, reducing noise coupling and improving switching stability.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab)	Drain	High-voltage power terminal; electrically connected to metal tab for direct heatsink mounting and low-inductance thermal path.
Pin 2	Power Source	Main source connection for load current return; carries full output current in half/full-bridge configurations.
Pin 3	Driver Source	Dedicated low-noise gate drive return path; isolates gate loop from high-di/dt source currents to suppress oscillation.
Pin 4	Gate	Control input; accepts 0–10 V logic-level drive; Zener-protected against ±25 V transients.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications requiring extended temperature cycling and reliability.
Fast-recovery body diode	Q_rr = 0.9 µC and trr = 142 ns enable efficient synchronous rectification without external diodes.
Lower R_DS(on) per area vs previous generation	33 mΩ typ. at 72 A improves power density and thermal performance over MDmesh DM2/DK series.
Extremely high dv/dt ruggedness	100 V/ns rating ensures immunity to false triggering in high-speed LLC and phase-shifted full-bridge converters.
Zener-protected gate	±25 V gate-source rating with integrated protection eliminates need for external clamping in noisy environments.

Applications

On-Board Charger (OBC)

DC-DC Bidirectional Converter

Use Scenario: 6.6 kW bidirectional OBC in EVs converting AC grid to 400 V/800 V battery with PFC + CLLC stages.

IC Role / Device Role / Timing Role: Primary-side switch in CLLC resonant tank; handles 72 A peak current and 650 V blocking in ZVS mode.

Use Value: Low Q_rr and fast trr reduce dead-time losses; dv/dt ruggedness prevents shoot-through during high-frequency resonant transitions.

Use Scenario: 3.3 kW isolated bi-directional DC-DC for vehicle-to-load (V2L) and battery balancing between 400 V and 12 V domains.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) topology operating at 200–500 kHz with soft switching.

Use Value: Dedicated driver source pin stabilizes gate waveform under high di/dt; 0.26 °C/W R_thJC sustains continuous 46 A at T_C = 100 °C.

Industrial Motor Drive Inverter

Server PSU LLC Resonant Converter

Use Scenario: 15 kW servo drive inverter powering permanent magnet motors with field-oriented control.

IC Role / Device Role / Timing Role: Phase-leg switch handling 72 A RMS current and 650 V DC link with 100% avalanche-tested reliability.

Use Value: 100% avalanche testing ensures robustness against IGBT-like short-circuit events; AEC-Q101 grade supports extended industrial lifecycle.

Use Scenario: High-density 3 kW server PSU using asymmetric half-bridge LLC with 96%+ efficiency targets.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch leveraging fast body diode for zero-voltage turn-on.

Use Value: 1.6 V V_SD at 72 A and low C_oss (260 pF) reduce conduction and capacitive losses in high-frequency rectification.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH68N65X2	R_DS(on) = 42 mΩ max., no driver source pin, Q_g = 135 nC, trr = 180 ns	Lacks dedicated driver source; higher Q_g and slower trr limit use in >300 kHz ZVS designs	Prefer when cost sensitivity outweighs switching speed and layout complexity requirements
IPP65R041CFD7	R_DS(on) = 41 mΩ max., TO247-3, Q_g = 105 nC, trr = 120 ns, no AEC-Q101	No driver source pin; not automotive-qualified; lower Q_g but higher R_DS(on) and no avalanche rating	Consider only for non-automotive industrial SMPS where AEC-Q101 and 100% avalanche test are not required

Compared with IXFH68N65X2 and IPP65R041CFD7, STW68N65DM6-4AG uniquely combines AEC-Q101 qualification, driver source pin, 100 V/ns dv/dt ruggedness, and lowest R_DS(on) per area-making it optimal for automotive-grade ZVS and high-reliability industrial converters demanding simultaneous high efficiency and fault tolerance.

Availability

STW68N65DM6-4AG is available at Aetrix Electronics and suitable for on-board chargers, bidirectional DC-DC converters, and industrial motor drives requiring stable component supply across automotive and industrial production lifecycles.

Supply support for STW68N65DM6-4AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to the MDmesh DM6 family-engineered specifically for high-efficiency, high-frequency resonant and soft-switching power converters in automotive electrification and industrial energy systems.

FAQ

What is the purpose of the fourth pin (Driver Source) in STW68N65DM6-4AG?

The fourth pin is a dedicated Driver Source terminal that provides a separate low-inductance return path for gate drive current. This isolates the gate loop from high-di/dt power source current, eliminating ground bounce and improving switching waveform fidelity-especially critical in ZVS and high-frequency resonant converters where timing precision affects efficiency and EMI.

How does STW68N65DM6-4AG's body diode performance compare to standard silicon MOSFETs?

Its body diode achieves trr = 142 ns and Q_rr = 0.9 µC at 72 A and 100 A/µs di/dt-significantly faster and lower-charge than conventional 650 V MOSFETs (typically >300 ns, >3 µC). This enables efficient synchronous rectification without external SiC diodes in medium-power resonant topologies.

Is STW68N65DM6-4AG suitable for hard-switched PFC boost stages?

Yes-it supports continuous 72 A at T_C = 25 °C and 46 A at T_C = 100 °C, with R_DS(on) = 33 mΩ typ. Its 100% avalanche rating and 100 V/ns dv/dt ruggedness provide margin against line surges and inductive kickback in boost PFC, though its fast body diode is most advantageous in soft-switched variants.

What thermal interface considerations apply due to the TO247-4 package?

The metal tab (Pin 1/Drain) serves as the primary thermal path. Use thermally conductive, electrically insulating pads or pastes rated for ≥150 °C. Mount with uniform pressure (1.5–2.0 N·m torque on M3 screws) to ensure full tab contact; avoid voids or air gaps, as R_thJC = 0.26 °C/W assumes optimal heatsink coupling.

STW68N65DM6-4AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 72A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 39mOhm @ 36A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 118 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 5900 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 480W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4

STW68N65DM6-4AG FAQ

1.How can I place an order for STW68N65DM6-4AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STW68N65DM6-4AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW68N65DM6-4AG reliable?

The price and inventory of STW68N65DM6-4AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW68N65DM6-4AG is usually 5 days.

3.What payment methods are accepted for STW68N65DM6-4AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW68N65DM6-4AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW68N65DM6-4AG?

STW68N65DM6-4AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW68N65DM6-4AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW68N65DM6-4AG?

For technical support, including STW68N65DM6-4AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW68N65DM6-4AG requirements.

6.How does Aetrix verify that STW68N65DM6-4AG is sourced from the original manufacturer or authorized distributors?

All STW68N65DM6-4AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW68N65DM6-4AG meets industry standards.

7.What is the process for return or replacement of STW68N65DM6-4AG?

All STW68N65DM6-4AG units undergo pre-shipment inspection (PSI). If there is an issue with STW68N65DM6-4AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW68N65DM6-4AG part is unused and in its original packaging.

Return procedure for STW68N65DM6-4AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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