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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW6N90K5

Name: STW6N90K5
Brand: STMicroelectronics
SKU: STW6N90K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW6N90K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW6N90K5.pdf

Description:: MOSFET N-CH 900V 6A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW6N90K5 from STMicroelectronics is a 900 V, 6 A N-channel Power MOSFET in TO-247 package, fabricated with MDmesh K5 vertical structure technology. It delivers 910 mΩ typical R_DS(on), 11 nC total gate charge, and 100% avalanche-tested ruggedness for high-voltage switching in industrial SMPS, PFC stages, and HV DC-DC converters.

For engineers reviewing the STW6N90K5 datasheet, STW6N90K5 pinout, STW6N90K5 application, or STW6N90K5 equivalent, key selection criteria include its 50 V/ns MOSFET dv/dt ruggedness, 210 mJ single-pulse avalanche energy, Zener-protected gate, and ultra-low FoM (R_DS(on) × Q_g = 10.0 nΩ·F).

Technical Context

This device employs ST's MDmesh K5 proprietary vertical superjunction architecture to achieve simultaneous reduction in conduction loss and switching loss. Its 342 pF C_iss, 31 pF C_oss, and 1.2 pF Crss enable fast, low-loss hard-switching up to 100 kHz in high-voltage topologies.

The integrated source-drain diode exhibits 342 ns trr at 25 °C and 536 ns at 150 °C, with 3.13 µC Q_rr (25 °C) and 4.42 µC (150 °C), supporting moderate-frequency inductive load commutation while maintaining EMI control via controlled recovery.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	900 V - supports 720 V DC bus operation with 20% margin for transient overvoltage in industrial HV systems
R_DS(on) max	1100 mΩ at V_GS = 10 V, I_D = 3 A - defines conduction loss in continuous 6 A operation at 25 °C
Q_g	11 nC - enables efficient gate drive with <5 W peak power using standard 10 V logic-level drivers
E_AS	210 mJ (T_J = 25 °C) - ensures robust unclamped inductive switching survival in PFC and flyback designs
dv/dt ruggedness	50 V/ns - prevents spurious turn-on during high-slew-rate voltage transients in bridge-leg configurations
R_thJC	1.14 °C/W - allows 96 W continuous dissipation at T_C = 100 °C before exceeding 150 °C junction limit

Pinout & Package

TO-247 package with isolated tab (Drain-connected metal flange), 3-pin through-hole configuration. Standard lead finish: matte tin, RoHS-compliant, ECOPACK2 grade.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±30 V rating; Zener-clamped to protect against ESD and overvoltage
2 (D, TAB)	Drain (Metal Tab)	Main high-side current path; electrically connected to flange; must be insulated from heatsink unless referenced to same potential
3 (S)	Source	Reference node for gate drive; carries full load current and reverse diode conduction; used for current sensing in low-side configurations

Key Features

Feature	Design Value
MDmesh K5 vertical structure	Reduces R_DS(on) × Q_g FoM by >40% vs prior K3 generation, enabling higher power density in fixed-volume enclosures
Zener-protected gate	Integrated 30 V gate oxide protection eliminates need for external gate clamp diodes in noisy industrial environments
100% avalanche tested	Every unit validated for single-pulse E_AS ≥ 210 mJ, ensuring field reliability in unclamped inductive switching
Low C_oss/C_rss ratio	31 pF C_oss / 1.2 pF Crss = 25.8 - minimizes Miller effect and improves controllability during high-dv/dt transitions

Applications

Industrial Switched-Mode Power Supplies

Active PFC Front-Ends

Use Scenario: Primary-side switch in 1–3 kW offline SMPS operating at 65–100 kHz with universal AC input.

IC Role / Device Role / Timing Role: High-voltage power switch handling 700–800 V DC link; driven by dedicated gate driver IC with 10 V logic interface.

Use Value: 11 nC Q_g reduces driver power loss by 35% vs comparable 900 V MOSFETs, lowering thermal stress on driver IC and PCB layout complexity.

Use Scenario: Boost switch in continuous conduction mode (CCM) PFC stage for server PSUs and telecom rectifiers.

IC Role / Device Role / Timing Role: Unidirectional high-side switch conducting 6 A RMS; synchronized to AC line zero-crossing via controller PWM.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during rapid V_DS rise across boost diode recovery, eliminating need for snubbers.

High-Voltage DC-DC Converters

Motor Drive Inverter Stages

Use Scenario: Isolated forward or half-bridge DC-DC converter stepping 400–800 V DC to 12–48 V for EV charging infrastructure.

IC Role / Device Role / Timing Role: Main switching element in primary side; subjected to repetitive unclamped inductive stress during dead-time transitions.

Use Value: 210 mJ E_AS rating allows safe operation without external clamping circuits, reducing BOM count and board area by 12%.

Use Scenario: High-side switch in 3-phase inverter driving 400 V AC induction motors in HVAC compressors and industrial pumps.

IC Role / Device Role / Timing Role: One of six switches forming full-bridge topology; handles 6 A peak phase current with 100% duty-cycle capability at T_C ≤ 100 °C.

Use Value: 1.14 °C/W R_thJC enables direct mounting to shared heatsink with adjacent IGBTs, simplifying thermal management in compact inverters.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20N90K5	Higher ID (20 A), higher R_DS(on) (450 mΩ typ.), larger die size, 22 nC Q_g	Better suited for parallel configurations or lower-frequency (<50 kHz) high-current PFC	Select when system prioritizes conduction loss over switching loss and gate drive capability permits higher Q_g
IPP60R190C7	650 V rating, 190 mΩ R_DS(on), 23 nC Q_g, CoolMOS C7 technology	Limited to ≤550 V DC bus; superior efficiency below 400 V but unsafe above 650 V	Choose only if redesigning for lower bus voltage and higher efficiency at light loads; not drop-in compatible

Compared with STW20N90K5 and IPP60R190C7, STW6N90K5 offers optimal balance of voltage margin, gate drive simplicity, and avalanche robustness for 700–800 V systems where space-constrained layouts preclude paralleling or voltage derating.

Availability

STW6N90K5 is available at Aetrix Electronics and suitable for industrial switched-mode power supplies, active PFC front-ends, and high-voltage DC-DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STW6N90K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

STW6N90K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 700–900 V industrial power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW6N90K5 supports 4 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11903 Rev 2. This derating reflects thermal limits imposed by its 1.14 °C/W R_thJC and 150 °C maximum junction temperature, ensuring reliable operation under sustained high-temperature conditions in enclosed power supplies.

Does STW6N90K5 include an integrated body diode, and what are its recovery characteristics?

Yes, STW6N90K5 features an integrated source-drain diode rated for 6 A continuous and 24 A pulsed current. Its reverse recovery time is 342 ns at 25 °C and 536 ns at 150 °C, with Q_rr of 3.13 µC and 4.42 µC respectively-values measured under standardized 6 A, 100 A/µs di/dt, 60 V VDD conditions per Figure 15 test circuit.

Can STW6N90K5 be used in synchronous rectification topologies?

No-STW6N90K5 is optimized as a high-side or high-voltage switching device, not a low-side synchronous rectifier. Its 910 mΩ R_DS(on) and 1.5 V V_SD forward voltage are significantly higher than dedicated SR MOSFETs, and its body diode recovery behavior is not tuned for zero-voltage switching (ZVS) or adaptive gate timing required in SR applications.

What is the significance of the "K5" suffix in STW6N90K5?

The "K5" denotes STMicroelectronics' fifth-generation MDmesh (Multi-Die mesh) superjunction technology, characterized by refined pillar doping profiles and reduced cell pitch. This iteration achieves lower R_DS(on) × Q_g FoM and improved dv/dt ruggedness compared to K3 and K4 predecessors, specifically targeting 800–900 V industrial power conversion.

STW6N90K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.1Ohm @ 3A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

STW6N90K5 FAQ

1.How can I place an order for STW6N90K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW6N90K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW6N90K5 reliable?

The price and inventory of STW6N90K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW6N90K5 is usually 5 days.

3.What payment methods are accepted for STW6N90K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW6N90K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW6N90K5?

STW6N90K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW6N90K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW6N90K5?

For technical support, including STW6N90K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW6N90K5 requirements.

6.How does Aetrix verify that STW6N90K5 is sourced from the original manufacturer or authorized distributors?

All STW6N90K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW6N90K5 meets industry standards.

7.What is the process for return or replacement of STW6N90K5?

All STW6N90K5 units undergo pre-shipment inspection (PSI). If there is an issue with STW6N90K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW6N90K5 part is unused and in its original packaging.

Return procedure for STW6N90K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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