STMicroelectronics STW6N95K5

Overview

STW6N95K5 from STMicroelectronics is a 950 V, 1.25 Ω (max), 9 A N-channel Power MOSFET in DPAK (TO-252) package, built on MDmesh K5 vertical structure technology. It delivers ultra-low gate charge (9.6 nC), 100% avalanche-tested ruggedness (EAS = 90 mJ), and Zener-protected gate for high-voltage switching in offline SMPS, PFC stages, and industrial inverters.

For engineers reviewing the STW6N95K5 datasheet, STW6N95K5 pinout, STW6N95K5 application, or STW6N95K5 equivalent, key selection criteria include R_DS(on) × area FoM, dv/dt ruggedness (50 V/ns), unclamped inductive switching capability, and thermal resistance (R_thJC = 1.39 °C/W) under high-T_J conditions.

Technical Context

This device employs ST's proprietary MDmesh K5 vertical superjunction architecture to achieve industry-leading figure of merit (FoM) and reduce specific on-resistance by >30% versus prior K3/K4 generations. Its optimized cell pitch and deep-trench doping profile enable stable 950 V breakdown with low C_iss (430 pF) and minimal Q_gd/Q_gs ratio (1.38).

The integrated Zener-protected gate structure clamps transient overvoltage to ±30 V, while the source-drain diode supports 6 A continuous conduction with 1.6 V forward drop and controlled 372 ns reverse recovery at 100 A/µs di/dt - critical for hard-switched flyback and resonant LLC topologies.

Key Specifications

Pinout & Package

DPAK (TO-252) package with exposed drain tab for enhanced thermal conduction and mechanical robustness. Standardized 3-pin surface-mount outline compatible with automated assembly and IPC-7351B footprint FP_0068772_34.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP6N95K5 and STU6N95K5, STW6N95K5 uniquely balances DPAK manufacturability, 1.39 °C/W thermal resistance, and full 950 V rated blocking - making it optimal for high-density, surface-mounted industrial power modules where reflow compatibility and thermal pad access are mandatory.

Availability

STW6N95K5 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, telecom rectifier modules, and EV onboard charger front-ends requiring stable component supply across multi-year production cycles.

Supply support for STW6N95K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

STW6N95K5 belongs to the MDmesh K5 high-voltage Power MOSFET product line, engineered specifically for >800 V switching applications demanding ultra-low R_DS(on) × area FoM and robust avalanche immunity in compact surface-mount packages.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW6N95K5 supports 6 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS6666 Rev 6. This derating reflects thermal limits of the DPAK package and ensures safe operation within SOA boundaries up to 150 °C junction temperature.

Does STW6N95K5 include integrated gate Zener protection?

Yes - the device integrates a bidirectional gate-source Zener clamp rated at ±30 V, confirmed in the "Features" section and validated by gate leakage current (I_GSS = ±10 µA at ±20 V) and absolute maximum rating (V_GS = ±30 V) in Table 1.

Can STW6N95K5 replace STD6N95K5 in existing designs?

No - STW6N95K5 and STD6N95K5 share identical electrical specs and DPAK packaging but differ in mechanical variant: STW6N95K5 uses type C3 DPAK (per Figure 21), while STD6N95K5 uses type A2 (Figure 20). Footprint and thermal pad alignment require verification before substitution.

What is the typical reverse recovery charge (Q_rr) of the body diode?

The typical reverse recovery charge is 4 µC at I_SD = 6 A, di/dt = 100 A/µs, and V_DD = 60 V, as measured per Figure 16 test circuit and reported in Table 7 of DS6666 Rev 6. At 150 °C junction temperature, Q_rr increases to 5 µC.