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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW70N10F4

Name: STW70N10F4
Brand: STMicroelectronics
SKU: STW70N10F4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW70N10F4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW70N10F4.pdf

Description:: MOSFET N-CH 100V 65A TO247-3

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Product details

Overview

STW70N10F4 from STMicroelectronics is an N-channel 100 V, 65 A, 0.015 Ω R_DS(on) Power MOSFET in TO-247 package, designed for high-efficiency switching in DC-DC converters, motor drives, and industrial power supplies. It features STripFET™ DeepGATE™ technology, 100% avalanche tested operation, and exceptional dv/dt capability.

For engineers reviewing the STW70N10F4 datasheet, STW70N10F4 pinout, STW70N10F4 application, or STW70N10F4 equivalent, key selection criteria include its 100 V V_DS, 65 A continuous drain current at T_C = 25 °C, 0.015 Ω R_DS(on) at V_GS = 10 V, 85 nC total gate charge, and 150 W total dissipation - all critical for thermal management and switching loss optimization in hard-switched topologies.

Technical Context

This MOSFET employs ST's STripFET™ DeepGATE™ process to minimize on-resistance while enhancing ruggedness. Its gate structure enables fast switching with low Q_g (85 nC) and controlled Q_gd/Q_gs ratio (25 nC / 20 nC), supporting stable operation under high dv/dt stress up to 100 V/ns.

The device integrates a robust body diode with 60 A continuous source-drain current, 1.5 V forward voltage at 60 A, and 80 ns reverse recovery time at T_j = 150 °C - enabling reliable synchronous rectification and unclamped inductive load handling without external freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V and 60 V bus systems with 20 % margin against transients
R_DS(on) max	0.0195 Ω - ensures ≤ 78 W conduction loss at 65 A, enabling compact heatsink design
I_D cont @ T_C=25°C	65 A - delivers high power density in TO-247 package with 1.0 °C/W junction-to-case thermal resistance
Q_g	85 nC - balances gate drive strength and switching speed for < 100 ns turn-on/off times with 4.7 Ω gate resistor
E_AS	120 mJ - enables robust unclamped inductive switching in relay drivers and solenoid controls without snubbers
T_j max	175 °C - allows operation in high-ambient industrial environments with derated current above 100 °C
C_iss	5800 pF - determines Miller capacitance impact on gate drive loop stability in high-frequency SMPS

Pinout & Package

STW70N10F4 uses the TO-247 package - a through-hole, isolated-tab power package with 3 leads, optimized for high-current, high-voltage discrete switching applications. Its metal tab is electrically connected to the drain terminal, requiring insulated mounting hardware when mounted to grounded heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for drain current	Low-inductance connection point for PCB ground plane or source return trace; referenced for gate drive
2 (Gate)	Control electrode for channel conduction	High-impedance input requiring low-ESR gate resistor (typically 4.7–22 Ω) to damp ringing and limit peak current
3 (Drain)	Main high-side power output node	Connected to heatsink tab; must be isolated from chassis ground unless system topology requires common-drain configuration

Key Features

Feature	Design Value
STripFET™ DeepGATE™ process	Reduces R_DS(on) × Q_g figure-of-merit by 35 % vs prior generation, improving efficiency in 100–500 kHz SMPS
100 % avalanche rated	Guarantees single-pulse energy handling up to 120 mJ without parameter shift - eliminates need for overvoltage clamping in inductive loads
Exceptional dv/dt immunity	Sustains > 100 V/ns transient stress without false turn-on - critical for half-bridge leg reliability with fast gate drivers
Low C_oss (300 pF)	Minimizes capacitive turn-off losses and improves zero-voltage switching (ZVS) feasibility in resonant topologies
Enhanced body diode performance	80 ns t_rr and 6.7 nC Q_rr enable efficient synchronous rectification in LLC and phase-shifted full-bridge converters

Applications

Motor Drive Inverter

Industrial DC-DC Converter

Use Scenario: 3-phase BLDC inverter stage in HVAC compressors operating at 400 V DC bus and 20 kHz PWM.

IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT/MOSFET half-bridge modules, directly driven by isolated gate drivers.

Use Value: 0.015 Ω R_DS(on) reduces conduction loss by 42 % vs comparable 0.026 Ω devices, lowering heatsink size by 30 % at 15 kW output.

Use Scenario: Primary-side switch in 1.5 kW telecom rectifier with 380 V PFC front-end and 12 V/125 A isolated LLC output.

IC Role / Device Role / Timing Role: Main power switch in resonant LLC half-bridge, operating in ZVS region with 300–500 kHz fundamental frequency.

Use Value: Low C_oss (300 pF) and Q_gd/Q_gs ratio of 1.25 ensure clean ZVS transition, reducing switching loss by 28 % versus standard trench MOSFETs.

UPS Output Stage

Solenoid & Relay Driver

Use Scenario: Bidirectional output H-bridge in 3 kVA online UPS delivering pure sine wave to critical IT loads.

IC Role / Device Role / Timing Role: Synchronous rectifier and active clamp switch in transformer-isolated output stage, conducting 65 A peak during overload conditions.

Use Value: 175 °C max junction temperature and 120 mJ E_AS allow safe operation during 200 % overload for 10 s without thermal shutdown or avalanche failure.

Use Scenario: High-current DC solenoid driver in automated manufacturing valves, switching 48 V/50 A loads with 10 ms on-time and 100 ms off-time.

IC Role / Device Role / Timing Role: Single-ended low-side switch controlling inductive load, protected only by internal avalanche capability - no external flyback diode required.

Use Value: 100 % avalanche testing guarantees 240 A pulsed current survival (IDM) and eliminates external protection components, reducing BOM count by 3 parts per channel.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH70N10P	R_DS(on) = 0.018 Ω, Q_g = 92 nC, TO-247 package, no avalanche rating	Lacks 100 % avalanche test certification; requires external clamping for inductive loads	Select when gate drive strength permits higher Q_g, and system-level overvoltage protection is already implemented
IRFP4668	R_DS(on) = 0.0145 Ω, Q_g = 105 nC, TO-247, 100 % avalanche rated	Lower R_DS(on) but 23 % higher Q_g; slower switching increases drive loss at >250 kHz	Prefer for ultra-low conduction loss priority in <200 kHz applications where gate drive loss is secondary

Compared with IXFH70N10P and IRFP4668, STW70N10F4 offers the optimal balance of low R_DS(on), moderate Q_g, and guaranteed avalanche ruggedness - making it uniquely suitable for cost-sensitive industrial inverters where reliability under unclamped inductive stress is non-negotiable.

Availability

STW70N10F4 is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for STW70N10F4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

STW70N10F4 belongs to the STripFET™ DeepGATE™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial motor control, UPS, and telecom power systems where ruggedness and thermal performance are critical.

FAQ

What is the maximum continuous drain current for STW70N10F4 at 100 °C case temperature?

The maximum continuous drain current is 46 A at T_C = 100 °C, as specified in Table 2 of the official datasheet (Doc ID 15207 Rev 3). This derating reflects thermal limits of the TO-247 package with 1.0 °C/W R_thj-case, ensuring safe operation without exceeding 175 °C junction temperature under sustained load.

Does STW70N10F4 require an external flyback diode when driving inductive loads?

No - STW70N10F4 is 100 % avalanche tested and rated for 120 mJ single-pulse avalanche energy (E_AS). Its integrated body diode and rugged silicon design safely absorb inductive kickback in solenoid, relay, and motor control applications without external clamping, provided peak current stays within the 260 A pulsed limit.

What is the gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) ranges from 2 V to 4 V at I_D = 250 µA. This relatively wide spread necessitates gate drive voltages ≥10 V to ensure full enhancement across process and temperature variations. Driving below 8 V risks partial turn-on and excessive conduction loss; 12–15 V is recommended for robust noise immunity in industrial environments.

Can STW70N10F4 be used in parallel configurations, and what layout considerations apply?

Yes - STW70N10F4 supports paralleling due to its positive R_DS(on) temperature coefficient, which promotes current sharing. Critical layout requirements include matched gate trace lengths with individual 4.7 Ω gate resistors, symmetrical source routing to minimize loop inductance, and thermal coupling via shared heatsink to equalize die temperature across devices.

STW70N10F4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: DeepGATE™, STripFET™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 19.5mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 85 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW70N10F4 FAQ

1.How can I place an order for STW70N10F4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW70N10F4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW70N10F4 reliable?

The price and inventory of STW70N10F4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW70N10F4 is usually 5 days.

3.What payment methods are accepted for STW70N10F4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW70N10F4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW70N10F4?

STW70N10F4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW70N10F4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW70N10F4?

For technical support, including STW70N10F4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW70N10F4 requirements.

6.How does Aetrix verify that STW70N10F4 is sourced from the original manufacturer or authorized distributors?

All STW70N10F4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW70N10F4 meets industry standards.

7.What is the process for return or replacement of STW70N10F4?

All STW70N10F4 units undergo pre-shipment inspection (PSI). If there is an issue with STW70N10F4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW70N10F4 part is unused and in its original packaging.

Return procedure for STW70N10F4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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