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STMicroelectronics STW70N60DM2

Name: STW70N60DM2
Brand: STMicroelectronics
SKU: STW70N60DM2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW70N60DM2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW70N60DM2.pdf

Description:: N-channel 600 V, 37 mOhm typ., 6

Quantity:: RFQ Add To RFQ list

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Inventory:2,669

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Product details

Overview

STW70N60DM2 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM2 series, featuring 600 V V_DS, 37 mΩ typ. R_DS(on), 66 A continuous drain current, and fast-recovery body diode with 150 ns trr at 25 °C. It is engineered for high-efficiency bridge topologies and ZVS phase-shift converters in industrial SMPS and solar inverters.

For engineers reviewing the STW70N60DM2 datasheet, STW70N60DM2 pinout, STW70N60DM2 application, or STW70N60DM2 equivalent, key selection criteria include avalanche ruggedness (1500 mJ E_AS), low Q_g (121 nC), dv/dt immunity (50 V/ns), and TO-247 thermal performance (R_thJC = 0.28 °C/W).

Technical Context

This device implements ST's MDmesh DM2 silicon architecture optimized for high-voltage switching with integrated fast-recovery body diode-enabling reduced switching losses and elimination of external anti-parallel diodes in synchronous rectification and resonant topologies. Its low C_iss (5508 pF) and ultra-low Q_gd/Q_gs ratio (61/26 nC) support clean gate drive and high-frequency operation up to 500 kHz.

The MOSFET delivers robust unclamped inductive switching capability (10 A I_AR, 1500 mJ E_AS) and withstands 50 V/ns dv/dt under specified conditions (V_DD ≤ 480 V), making it suitable for hard-switched PFC stages and motor drives where voltage transients are severe.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in ZVS converters with margin
R_DS(on) max	42 mΩ - Enables <1.8 W conduction loss at 66 A, reducing heatsink requirements
Q_g	121 nC - Low gate charge allows efficient driving with standard 1-A gate drivers
trr	150 ns @ T_j = 25 °C - Fast body diode recovery minimizes commutation loss in half/full-bridge
E_AS	1500 mJ - Single-pulse avalanche energy supports reliable operation during transient overloads
dv/dt ruggedness	50 V/ns - Sustains rapid voltage transients without spurious turn-on in noisy power stages
R_thJC	0.28 °C/W - Enables >400 W dissipation with moderate heatsinking at case temperature ≤ 100 °C

Pinout & Package

Supplied in TO-247 package with isolated tab (Drain-connected), offering high thermal conductivity and mechanical robustness for industrial power modules and open-frame PSUs.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; accepts 10 V logic-level drive; requires <2 Ω gate resistance for optimal switching
2 (D / Tab)	Drain (exposed metal tab)	Main high-side power path; electrically connected to heatsink; must be insulated if chassis-ground referenced
3 (S)	Source	Power return node; serves as reference for gate drive and current sensing; low-inductance layout critical

Key Features

Feature	Design Value
Fast-recovery body diode	trr = 150 ns, Q_rr = 0.75 µC - Eliminates need for external SiC/Schottky diode in LLC resonant converters
Extremely low gate charge	Q_g = 121 nC, Q_gd/Q_gs = 2.35 - Reduces Miller-induced shoot-through risk and driver power loss
100% avalanche tested	E_AS = 1500 mJ, I_AR = 10 A - Guarantees ruggedness in unclamped inductive switching without derating
Zener-protected gate	V_GS rating ±25 V with integrated gate oxide protection - Prevents ESD damage during handling and PCB assembly
High dv/dt immunity	50 V/ns at V_DD ≤ 480 V - Ensures noise immunity in high-di/dt gate loops common in multi-kW inverters

Applications

Industrial SMPS

Solar Inverters

Use Scenario: Primary-side switch in 3–5 kW telecom rectifiers and server PSUs operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-side switching element in active-clamp forward or phase-shifted full-bridge topology.

Use Value: Low R_DS(on) and fast trr reduce total power loss by ~12% vs. legacy MDmesh D-series in 200 kHz designs.

Use Scenario: DC-link switching stage in string inverters converting 600–1000 V PV input to grid-synchronized AC.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in H-bridge output stage with unidirectional conduction duty.

Use Value: Avalanche-rated operation enables direct replacement without snubber redesign; 50 V/ns dv/dt rating prevents false triggering during grid fault transients.

Motor Drives

Induction Heating

Use Scenario: Inverter leg switch in 7.5–15 kW HVAC compressors and pump drives using space-vector PWM.

IC Role / Device Role / Timing Role: Low-side switching device with body diode conducting freewheeling current during dead-time.

Use Value: 150 ns trr limits reverse recovery overshoot to <15 V, avoiding shoot-through in 16 kHz PWM with 500 ns dead-time.

Use Scenario: Resonant tank switch in 2–5 kW domestic induction cooktops operating at 20–50 kHz.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) device in series-resonant half-bridge with soft-commutated turn-off.

Use Value: Low C_oss (241 pF) and E_OSS (24 µJ at 400 V) minimize capacitive turn-on loss and enable stable ZVS down to 25 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW78N60M2	600 V, 32 mΩ typ., 78 A, higher R_DS(on) tempco, same DM2 die but larger chip area	Higher conduction loss at elevated T_j; better for lower-frequency (<100 kHz), higher-current applications	Select when peak current exceeds 66 A and thermal design permits higher R_DS(on) drift
IPP60R099C7	600 V, 99 mΩ typ., 34 A, CoolMOS C7, lower Q_g (62 nC) but higher trr (250 ns)	Superior efficiency at light load due to lower C_iss, but unsuitable for hard-commutated freewheeling	Prefer for flyback or QR PFC where body diode conduction is minimal; avoid in full-bridge with bidirectional current

Compared with STW78N60M2, STW70N60DM2 offers tighter R_DS(on) tolerance and superior dv/dt immunity; versus IPP60R099C7, it trades higher Q_g for dramatically faster trr and guaranteed avalanche capability-critical for reliability in industrial motor drives and solar inverters.

Availability

STW70N60DM2 is available at Aetrix Electronics and suitable for industrial SMPS, solar inverters, motor drives, and induction heating systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STW70N60DM2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

STW70N60DM2 belongs to the MDmesh DM2 Power MOSFET product line, developed specifically for high-efficiency, high-reliability switching in 600 V industrial power conversion systems where low conduction loss, fast diode recovery, and avalanche robustness are mandatory.

FAQ

Is STW70N60DM2 suitable for zero-voltage switching (ZVS) topologies?

Yes. With 241 pF C_oss, 470 pF C_{oss_eq}, and 24 µJ E_OSS at 400 V, STW70N60DM2 enables reliable ZVS operation in phase-shifted full-bridge and LLC resonant converters above 100 kHz. Its low Q_gd/Q_gs ratio ensures predictable turn-on timing and reduces circulating current losses.

What is the maximum recommended gate resistor value for hard-switched 200 kHz operation?

For 200 kHz hard-switched operation with 121 nC Q_g, a gate resistor of 4.7 Ω is validated per Figure 13 in DS10558. Using >10 Ω increases td(on)/td(off) beyond 200 ns, raising switching loss; <2.2 Ω risks excessive peak gate current (>5 A) and ringing without proper layout control.

Does the body diode require external snubbing in bridge configurations?

No external snubber is required for the body diode in typical bridge use. With trr = 150 ns and I_RRM = 10.5 A at 25 °C, the diode recovers cleanly under di/dt = 100 A/µs. Layout inductance must remain <20 nH to prevent voltage overshoot exceeding 650 V during recovery.

Can STW70N60DM2 replace STW70N60M2 in existing designs?

Yes, with benefits. STW70N60DM2 replaces STW70N60M2 pin-for-pin in TO-247, offering 30% lower Q_rr, 2× higher dv/dt immunity, and guaranteed 1500 mJ E_AS. No gate drive or layout changes are needed, though thermal design may allow 10–15% higher power density due to improved R_DS(on) tempco.

STW70N60DM2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 66A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 121 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 5508 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 446W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW70N60DM2 FAQ

1.How can I place an order for STW70N60DM2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW70N60DM2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW70N60DM2 reliable?

The price and inventory of STW70N60DM2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW70N60DM2 is usually 5 days.

3.What payment methods are accepted for STW70N60DM2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW70N60DM2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW70N60DM2?

STW70N60DM2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW70N60DM2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW70N60DM2?

For technical support, including STW70N60DM2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW70N60DM2 requirements.

6.How does Aetrix verify that STW70N60DM2 is sourced from the original manufacturer or authorized distributors?

All STW70N60DM2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW70N60DM2 meets industry standards.

7.What is the process for return or replacement of STW70N60DM2?

All STW70N60DM2 units undergo pre-shipment inspection (PSI). If there is an issue with STW70N60DM2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW70N60DM2 part is unused and in its original packaging.

Return procedure for STW70N60DM2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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