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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW70N60DM6

Name: STW70N60DM6
Brand: STMicroelectronics
SKU: STW70N60DM6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW70N60DM6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW70N60DM6.pdf

Description:: MOSFET N-CH 600V 62A TO247

Quantity:: RFQ Add To RFQ list

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Inventory:5,149

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Product details

Overview

STW70N60DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 fast-recovery diode series, designed for high-efficiency bridge topologies and ZVS phase-shift converters. It delivers 600 V V_DS, 42 mΩ R_DS(on) max at 10 V V_GS, 62 A continuous drain current at T_C = 25 °C, and features a fast-recovery body diode with Q_rr = 0.69 µC (T_J = 25 °C) and trr = 138 ns.

For engineers reviewing the STW70N60DM6 datasheet, STW70N60DM6 pinout, STW70N60DM6 application, or STW70N60DM6 equivalent, key selection criteria include its 100 V/ns dv/dt ruggedness, 100% avalanche tested reliability, low gate charge (Q_g = 99 nC), Zener-protected gate, and TO-247 package thermal performance (R_thJC = 0.32 °C/W).

Technical Context

This device implements ST's MDmesh DM6 silicon technology optimized for high-voltage switching with minimized recovery charge and enhanced R_DS(on)/area trade-off. Its fast-recovery body diode enables robust operation in hard-switched and resonant topologies without external anti-parallel diodes.

The MOSFET supports high dv/dt (100 V/ns) and di/dt (1000 A/µs) during diode commutation, validated under V_DD = 400 V and I_SD ≤ 62 A conditions. Gate threshold voltage is tightly specified (3.25–4.75 V), and intrinsic gate resistance is 1.5 Ω - critical for precise gate drive design and EMI control.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports primary-side switching in 400 V DC bus systems with 20% margin for transients
R_DS(on) max	42 mΩ at V_GS = 10 V, I_D = 31 A - enables <1.5 W conduction loss at 60 A in continuous operation
Q_g	99 nC - reduces gate driver power requirement and enables efficient 100+ kHz switching
Q_rr	0.69 µC (T_J = 25 °C) - lowers diode recovery loss and EMI in bridge-leg commutation
dv/dt ruggedness	100 V/ns - ensures reliable operation under fast voltage transients without spurious turn-on
E_AS	1850 mJ - provides single-pulse avalanche energy handling for unclamped inductive switching events
R_thJC	0.32 °C/W - allows >300 W dissipation with modest heatsink (ΔT = 100 °C)

Pinout & Package

STW70N60DM6 is housed in a TO-247 package with standard 3-lead configuration and isolated tab (drain-connected). The package supports high-power thermal management via direct case mounting to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Electrically connected to metal tab - requires insulating washer when mounted to grounded heatsink
G (Lead 1)	Gate	High-impedance control terminal - sensitive to ESD; requires gate resistor (4.7 Ω typical) and clamping
S (Lead 3)	Source	Power return path and gate reference - must be low-inductance layout to minimize ringing during switching

Key Features

Feature	Design Value
Fast-recovery body diode	trr = 138 ns and Q_rr = 0.69 µC enable zero-voltage switching in LLC and phase-shift full-bridge converters
Low R_DS(on) per area	36 mΩ typ. at 10 V V_GS improves power density vs prior MDmesh generations - reduces die size for same rating
Zener-protected gate	±25 V V_GS rating with integrated gate oxide protection - eliminates need for external Zener clamp in most designs
100% avalanche tested	Each unit validated for repetitive and non-repetitive avalanche (I_AR = 7 A, E_AS = 1850 mJ) - ensures field reliability under fault conditions
High dv/dt ruggedness	100 V/ns rating confirmed under V_DS ≤ 480 V - prevents false turn-on in high-noise motor drive and SMPS environments

Applications

Industrial Motor Drives

Server & Telecom SMPS

Use Scenario: Three-phase inverter stage in 7.5 kW HVAC compressors operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT replacement topology, handling 62 A RMS output current.

Use Value: Low Q_rr and fast trr reduce commutation losses by 35% vs legacy 600 V MOSFETs, enabling >98.2% system efficiency at full load.

Use Scenario: Primary-side switch in 3.5 kW telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: Main power switch subjected to 400 V DC bus and 100 kHz switching with ZVS-assisted turn-on.

Use Value: 99 nC Q_g and 1.5 Ω R_G allow clean gate drive with minimal overshoot, reducing EMI filter size by 22%.

EV Onboard Charger (OBC)

Renewable Energy Inverters

Use Scenario: AC/DC PFC boost stage in 11 kW bidirectional OBC with interleaved dual-phase architecture.

IC Role / Device Role / Timing Role: Fast-switching boost switch managing 35 A average current and 600 V blocking.

Use Value: 0.32 °C/W R_thJC enables compact heatsink design while maintaining T_J < 125 °C at 45 °C ambient.

Use Scenario: H-bridge inverter stage of 5 kW string solar inverter with transformerless topology.

IC Role / Device Role / Timing Role: High-reliability switching device exposed to repeated lightning-induced surges and grid fault currents.

Use Value: 100% avalanche testing and 100 V/ns dv/dt rating ensure survival during 6 kV surge events without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH70N60X3	R_DS(on) = 45 mΩ (typ.), Q_rr = 1.1 µC, no integrated Zener gate protection	Higher diode recovery loss limits use in high-frequency ZVS designs; requires external gate clamp	Preferred where cost sensitivity outweighs Q_rr and gate protection requirements
IPP60R041C7	R_DS(on) = 41 mΩ (typ.), Q_rr = 0.82 µC, TO-220FP package (R_thJC = 0.85 °C/W)	Lower thermal performance restricts continuous current to ~40 A at T_C = 100 °C; unsuitable for >5 kW conduction-limited designs	Selected for space-constrained, lower-power (<3 kW) applications where TO-247 footprint is prohibitive

Compared with IXFH70N60X3 and IPP60R041C7, STW70N60DM6 offers superior dv/dt immunity, lower Q_rr, and integrated gate protection - making it optimal for high-reliability, high-frequency industrial and EV power stages where thermal headroom and commutation robustness are critical.

Availability

STW70N60DM6 is available at Aetrix Electronics and suitable for industrial motor drives, server/telecom SMPS, EV onboard chargers, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for STW70N60DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with vertical manufacturing capability.

This device belongs to the MDmesh DM6 family - engineered specifically for high-efficiency, high-voltage switching in resonant and hard-switched topologies where low Q_rr, high dv/dt immunity, and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW70N60DM6 supports 39 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12274 Rev 5. This rating accounts for R_DS(on) increase with junction temperature and thermal derating of the TO-247 package's safe operating area.

Does this MOSFET require an external gate Zener diode?

No - STW70N60DM6 integrates Zener protection on the gate oxide, rated for ±25 V V_GS. External clamping is unnecessary unless system-level transients exceed this rating, such as in unfiltered gate drive paths with long traces.

How does the body diode recovery performance compare between 25 °C and 150 °C junction temperature?

At T_J = 150 °C, trr increases to 340 ns and Q_rr rises to 4.6 µC - more than 6× higher than at 25 °C (138 ns, 0.69 µC). This must be accounted for in thermal design and dead-time selection to avoid shoot-through in bridge configurations.

Can STW70N60DM6 replace STW70N60M2 in existing designs?

Yes, but with design validation: STW70N60DM6 offers lower R_DS(on) (42 mΩ vs 48 mΩ), faster trr (138 ns vs 220 ns), and improved dv/dt ruggedness (100 V/ns vs 50 V/ns), yet shares identical TO-247 pinout and voltage rating - enabling drop-in upgrade where thermal and EMI margins allow.

STW70N60DM6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM6

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 62A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW70N60DM6 FAQ

1.How can I place an order for STW70N60DM6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW70N60DM6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW70N60DM6 reliable?

The price and inventory of STW70N60DM6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW70N60DM6 is usually 5 days.

3.What payment methods are accepted for STW70N60DM6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW70N60DM6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW70N60DM6?

STW70N60DM6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW70N60DM6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW70N60DM6?

For technical support, including STW70N60DM6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW70N60DM6 requirements.

6.How does Aetrix verify that STW70N60DM6 is sourced from the original manufacturer or authorized distributors?

All STW70N60DM6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW70N60DM6 meets industry standards.

7.What is the process for return or replacement of STW70N60DM6?

All STW70N60DM6 units undergo pre-shipment inspection (PSI). If there is an issue with STW70N60DM6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW70N60DM6 part is unused and in its original packaging.

Return procedure for STW70N60DM6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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