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STMicroelectronics STW70N65DM6

Name: STW70N65DM6
Brand: STMicroelectronics
SKU: STW70N65DM6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW70N65DM6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW70N65DM6.pdf

Description:: MOSFET N-CH 650V 68A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW70N65DM6 from STMicroelectronics is a high-voltage N-channel MDmesh DM6 Power MOSFET in TO-247 package, rated for 650 V V_DS, 36 mΩ typ. R_DS(on) at V_GS = 10 V, and 68 A continuous drain current at T_C = 25 °C. It features fast-recovery body diode (t_rr = 170 ns @ 25 °C), 100% avalanche tested (E_AS = 1.8 J), and extreme dv/dt ruggedness (100 V/ns). It is engineered for ZVS phase-shift converters and high-efficiency bridge topologies.

For engineers reviewing the STW70N65DM6 datasheet, STW70N65DM6 pinout, STW70N65DM6 application, or STW70N65DM6 equivalent, key selection criteria include its low Q_rr (1.08 µC), low gate charge (Q_g = 125 nC), high dv/dt immunity, TO-247 thermal performance (R_thJC = 0.28 °C/W), and Zener-protected gate.

Technical Context

This MOSFET employs ST's MDmesh DM6 silicon technology, integrating a fast-recovery body diode with optimized charge balance to achieve simultaneous low R_DS(on) per die area and reduced Q_rr (4.16 µC @ 150 °C) versus prior MDmesh generations. Its structure enables stable switching under high di/dt (1000 A/µs) and dv/dt stress without oscillation or false turn-on.

The device operates with gate threshold voltage V_GS(th) = 3.25–4.75 V and exhibits minimal R_DS(on) drift over temperature (1.5× increase from 25 °C to 125 °C). Its C_oss,eq = 859 pF at V_DS = 520 V supports predictable hard-switching energy loss calculation in resonant topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 400 V in full-bridge ZVS converters with margin.
R_DS(on) max	40 mΩ - Ensures <1.8 W conduction loss at 68 A, enabling high-current operation without forced cooling.
Q_g	125 nC - Reduces gate drive power and enables use with standard 1-A peak gate drivers.
t_rr	170 ns @ 25 °C - Minimizes commutation losses and EMI in synchronous rectification and LLC primary switches.
E_AS	1.8 J - Supports unclamped inductive switching in motor drives and UPS inverters without external snubbers.
dv/dt ruggedness	100 V/ns - Prevents spurious turn-on during fast voltage transients in high-side configurations.
R_thJC	0.28 °C/W - Enables 450 W dissipation with ≤126 °C junction rise above case, supporting compact heatsink designs.

Pinout & Package

TO-247 package: isolated tab (Drain), 3-pin through-hole mounting with industry-standard footprint. Thermal path optimized via copper tab directly bonded to die backside.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Low-impedance control input; requires <2.3 Ω intrinsic gate resistance for stable high-frequency switching.
2 (D / TAB)	Drain (exposed metal tab)	Main high-voltage power terminal; electrically connected to heatsink-requires isolation if heatsink is grounded.
3 (S)	Source	Reference node for gate drive and current sensing; carries full load current and diode reverse recovery current.

Key Features

Feature	Design Value
Fast-recovery body diode	t_rr = 170 ns and Q_rr = 1.08 µC @ 25 °C enable efficient synchronous rectification without external diodes.
Low R_DS(on) per area	36 mΩ typ. at 68 A reduces conduction loss by >25% vs. prior MDmesh DM2 generation in same TO-247 footprint.
Zener-protected gate	±25 V V_GS rating with integrated gate oxide protection prevents ESD-induced failure during handling and PCB assembly.
100% avalanche tested	Each unit validated for single-pulse E_AS = 1.8 J ensures robustness in inductive fault conditions without derating.
High dv/dt ruggedness	100 V/ns rating allows reliable operation in high-side switch positions of three-phase inverters and PFC boost stages.

Applications

Industrial Motor Drives

Server & Telecom PSU

Use Scenario: Primary-side switch in 3.3 kW interleaved PFC stage operating at 70 kHz.

IC Role / Device Role / Timing Role: High-voltage switching element handling 400 V DC bus with bidirectional current flow during zero-voltage switching transitions.

Use Value: Low Q_rr and fast t_rr reduce dead-time losses and EMI, while 100 V/ns dv/dt immunity prevents false triggering in multi-phase layouts.

Use Scenario: Half-bridge primary switch in 2 kW LLC resonant converter for AI server power supply.

IC Role / Device Role / Timing Role: ZVS-capable power switch managing 520 V peak drain voltage and 68 A peak current in soft-switched topology.

Use Value: C_oss,eq = 859 pF enables precise resonant tank design; low R_DS(on) maintains >97% efficiency at full load.

Uninterruptible Power Supplies

EV On-Board Chargers

Use Scenario: Inverter leg switch in 5 kVA double-conversion UPS delivering clean 230 V AC output.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 3-phase inverter bridge with active short-circuit protection.

Use Value: Avalanche-rated E_AS = 1.8 J eliminates need for external clamping circuits during load dump events.

Use Scenario: Boost switch in 11 kW AC/DC OBC operating across -40 °C to +105 °C ambient.

IC Role / Device Role / Timing Role: High-reliability power switch sustaining 68 A continuous current with minimal R_DS(on) drift over temperature.

Use Value: R_DS(on) normalized to 1.5× at 125 °C ensures predictable thermal design; TO-247 mechanical robustness withstands automotive vibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW78N65M5	Higher R_DS(on) (42 mΩ max), lower Q_g (105 nC), same 650 V rating but MDmesh M5 process.	Optimized for higher-frequency PFC (100+ kHz); less suitable for high-current ZVS where Q_rr dominates loss.	Select when gate drive capability is limited and switching frequency exceeds 150 kHz.
IPP65R041CFD7	Infineon CoolMOS CFD7: 41 mΩ R_DS(on), 132 nC Q_g, t_rr = 140 ns, no integrated Zener protection.	Better t_rr but lacks 100% avalanche test and Zener gate clamp; requires external gate protection.	Choose only with added gate protection circuitry and where tighter t_rr tolerance justifies extra BOM cost.

Compared with STW70N65DM6, STW78N65M5 trades conduction loss for gate drive simplicity, while IPP65R041CFD7 offers faster diode recovery but demands external gate safeguards-neither matches the integrated ruggedness and ZVS-optimized Q_rr/R_DS(on) balance of the DM6.

Availability

STW70N65DM6 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and uninterruptible power systems requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STW70N65DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh DM6 high-voltage Power MOSFET product line, developed specifically for high-efficiency, high-power-density ZVS and resonant converters demanding ultra-low Q_rr, rugged dv/dt behavior, and guaranteed avalanche capability.

FAQ

What is the maximum safe operating temperature for STW70N65DM6?

The STW70N65DM6 has an operating junction temperature range of –55 °C to 150 °C. Its absolute maximum T_J is 150 °C, and thermal design must ensure this limit is not exceeded under worst-case conduction and switching losses. R_thJC = 0.28 °C/W allows direct heatsink mounting, but case-to-heatsink thermal interface resistance must be included in calculations.

Does STW70N65DM6 require a negative gate voltage for reliable turn-off?

No. The device specifies V_GS = 0 V for turn-off and has a gate threshold voltage range of 3.25–4.75 V. A gate drive of 0 V is sufficient for full depletion; applying –5 V is unnecessary and not recommended unless required by system-level noise immunity requirements beyond datasheet conditions.

Can STW70N65DM6 replace older STW70N65M2 devices in existing designs?

Yes, with validation: STW70N65DM6 offers lower R_DS(on) (36 mΩ vs. 45 mΩ typ.), improved Q_rr (1.08 µC vs. 2.4 µC), and enhanced dv/dt ruggedness. However, gate charge increases slightly (125 nC vs. 110 nC), so gate driver slew rate and power must be verified for compatibility in high-frequency operation.

Is the TO-247 package lead-free and RoHS-compliant?

Yes. STW70N65DM6 is supplied in ECOPACK2-compliant TO-247 packages, meeting RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. Lead-free termination and halogen-free molding compound are standard; full compliance documentation is available via ST's quality portal.

STW70N65DM6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM6

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 68A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 40mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 4900 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 450W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW70N65DM6 FAQ

1.How can I place an order for STW70N65DM6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW70N65DM6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW70N65DM6 reliable?

The price and inventory of STW70N65DM6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW70N65DM6 is usually 5 days.

3.What payment methods are accepted for STW70N65DM6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW70N65DM6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW70N65DM6?

STW70N65DM6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW70N65DM6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW70N65DM6?

For technical support, including STW70N65DM6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW70N65DM6 requirements.

6.How does Aetrix verify that STW70N65DM6 is sourced from the original manufacturer or authorized distributors?

All STW70N65DM6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW70N65DM6 meets industry standards.

7.What is the process for return or replacement of STW70N65DM6?

All STW70N65DM6 units undergo pre-shipment inspection (PSI). If there is an issue with STW70N65DM6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW70N65DM6 part is unused and in its original packaging.

Return procedure for STW70N65DM6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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