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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW70N65M2

Name: STW70N65M2
Brand: STMicroelectronics
SKU: STW70N65M2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW70N65M2

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW70N65M2.pdf

Description:: MOSFET N-CH 650V 63A TO247-3

Quantity:: RFQ Add To RFQ list

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Inventory:8,088

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Product details

Overview

STW70N65M2 from STMicroelectronics is an N-channel 650 V, 39 mΩ typ. (46 mΩ max.), 63 A MDmesh™ M2 Power MOSFET in TO-247 package, designed for high-efficiency hard-switching and resonant converters in industrial SMPS, solar inverters, and UPS systems.

For engineers reviewing the STW70N65M2 datasheet, STW70N65M2 pinout, STW70N65M2 application, or STW70N65M2 equivalent, key selection criteria include its 117 nC total gate charge, 208 pF output capacitance, 15 V/ns diode recovery dv/dt ruggedness, 100% avalanche tested reliability, and Zener-protected gate.

Technical Context

This device employs ST's MDmesh M2 strip layout and optimized vertical structure to simultaneously minimize R_DS(on) and C_oss, enabling high-frequency operation with low conduction and switching losses. Its 50 V/ns MOSFET dv/dt ruggedness and 4 A repetitive avalanche current support robust operation under transient overvoltage conditions.

The integrated source-drain diode features 584 ns reverse recovery time (T_J = 25 °C) and 14.5 µC Q_rr, with forward voltage of 1.6 V at 63 A - critical for synchronous rectification and bidirectional topologies where body diode conduction occurs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus designs with ≥30% margin for surge and ringing
R_DS(on) max	46 mΩ - enables <1.5 W conduction loss at 63 A, TC = 25 °C
Q_g	117 nC - determines gate drive power requirement and switching speed control
C_oss	208 pF - defines energy stored in output capacitance (E_OSS ≈ 35 µJ @ 520 V)
T_J max	150 °C - sets thermal derating limit for continuous operation in enclosed enclosures
E_AS	3.5 J - quantifies single-pulse unclamped inductive switching robustness
dv/dt ruggedness	50 V/ns - ensures reliable turn-off without spurious conduction in high-noise environments

Pinout & Package

TO-247 package: insulated case, through-hole mounting, 3-pin configuration with tab-connected drain for low-inductance heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤±25 V bias; 3 Ω intrinsic resistance affects gate loop damping
2 (D / TAB)	Drain (case-connected)	Main high-side switching node; electrically tied to metal tab for direct heatsink coupling
3 (S)	Source	Power return path and reference for gate drive; carries full load current and diode recovery current

Key Features

Feature	Design Value
Extremely low gate charge	117 nC total charge enables fast, low-loss switching with standard 1–2 A gate drivers
Optimized C_oss profile	208 pF output capacitance with flat voltage dependence reduces switching loss in ZVS/ZCS circuits
100% avalanche tested	Each unit validated for 4 A repetitive avalanche current and 3.5 J single-pulse energy
Zener-protected gate	Integrated gate-source Zener clamps transients to ±25 V, eliminating external TVS in most layouts

Applications

Industrial SMPS

Solar Inverters

Use Scenario: Primary-side switch in 3–5 kW telecom rectifiers and server PSUs operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-voltage, high-current hard-switched main transistor handling full DC input conversion.

Use Value: 39 mΩ R_DS(on) and 117 nC Q_g jointly reduce total power loss by >12% vs. prior-generation 600 V MOSFETs at 200 kHz.

Use Scenario: DC–AC H-bridge stage in string inverters converting 600–1000 V PV array output.

IC Role / Device Role / Timing Role: Low-loss, avalanche-rugged switching element in unipolar PWM modulation schemes.

Use Value: 50 V/ns dv/dt ruggedness prevents false turn-on during fast voltage transitions across transformer leakage inductance.

UPS Systems

Induction Heating

Use Scenario: Bidirectional buck-boost stage in online double-conversion UPS managing battery charge/discharge and line regulation.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch sharing same die; body diode conducts during dead-time.

Use Value: 1.6 V V_SD at 63 A and 584 ns t_rr minimize conduction loss and EMI during commutation.

Use Scenario: Half-bridge switch in 20–100 kHz resonant tank drivers for domestic and commercial cooktops.

IC Role / Device Role / Timing Role: High-reliability power switch subjected to repeated unclamped inductive switching stress.

Use Value: 3.5 J E_AS rating ensures survival under worst-case zero-crossing misfire events without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R041CFD7	R_DS(on) = 41 mΩ, Q_g = 102 nC, C_oss = 225 pF, no integrated Zener	Lacks gate Zener protection; requires external clamping; slightly lower R_DS(on) but higher C_oss	Preferred when gate drive layout allows discrete protection and lowest conduction loss is prioritized
IXTH70N65X2	R_DS(on) = 42 mΩ, Q_g = 132 nC, avalanche rated to 2.8 J, TO-247 non-isolated	Higher gate charge increases driver loss; lower E_AS limits unclamped inductive robustness	Selected when cost sensitivity outweighs need for highest avalanche margin and lowest Q_g

Compared with IPP65R041CFD7 and IXTH70N65X2, STW70N65M2 delivers superior dv/dt immunity (50 V/ns), integrated gate protection, and balanced trade-off between R_DS(on), Q_g, and C_oss - making it optimal for mission-critical industrial converters where reliability and layout simplicity are paramount.

Availability

STW70N65M2 is available at Aetrix Electronics and suitable for industrial SMPS, solar inverters, and UPS systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STW70N65M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The MDmesh M2 series targets high-efficiency power conversion, combining low R_DS(on) and optimized switching parameters for 500–800 V applications in servers, renewable energy, and motor drives.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW70N65M2 supports 40 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11513. This derating reflects thermal limitations of the TO-247 package and junction-to-case thermal resistance of 0.28 °C/W. Designers must ensure heatsink design maintains case temperature ≤100 °C under full load to sustain this rating.

Does STW70N65M2 have an integrated gate Zener diode?

Yes - the device integrates a gate-source Zener diode rated for ±25 V, explicitly stated in the "Features" section and confirmed in the Absolute Maximum Ratings table (V_GS = ±25 V). This eliminates the need for external gate protection in most applications, reducing BOM count and PCB area.

How is the output capacitance (C_oss) characterized, and why does it matter?

C_oss is measured at 208 pF (typ.) with V_DS = 100 V and f = 1 MHz. Its voltage-dependent behavior - shown in Figure 7 - directly impacts switching loss in hard-switched converters and resonant tank energy in LLC designs. The low C_oss and favorable C_oss vs. V_DS curve enable efficient operation up to 300 kHz.

Can STW70N65M2 replace older STW70N65M in existing designs?

Yes - STW70N65M2 is a direct upgrade to STW70N65M, offering lower R_DS(on) (39 mΩ vs. 45 mΩ typ.), reduced Q_g (117 nC vs. 130 nC), and improved C_oss profile. Pinout, package, and absolute ratings are identical, enabling drop-in replacement without layout changes while improving efficiency and thermal margin.

STW70N65M2 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 46mOhm @ 31.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 117 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 5140 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 446W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW70N65M2 FAQ

1.How can I place an order for STW70N65M2 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW70N65M2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW70N65M2 reliable?

The price and inventory of STW70N65M2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW70N65M2 is usually 5 days.

3.What payment methods are accepted for STW70N65M2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW70N65M2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW70N65M2?

STW70N65M2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW70N65M2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW70N65M2?

For technical support, including STW70N65M2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW70N65M2 requirements.

6.How does Aetrix verify that STW70N65M2 is sourced from the original manufacturer or authorized distributors?

All STW70N65M2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW70N65M2 meets industry standards.

7.What is the process for return or replacement of STW70N65M2?

All STW70N65M2 units undergo pre-shipment inspection (PSI). If there is an issue with STW70N65M2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW70N65M2 part is unused and in its original packaging.

Return procedure for STW70N65M2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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