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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW72N60DM2AG

Name: STW72N60DM2AG
Brand: STMicroelectronics
SKU: STW72N60DM2AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW72N60DM2AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW72N60DM2AG.pdf

Description:: MOSFET N-CH 600V 66A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW72N60DM2AG from STMicroelectronics is an AEC-Q101 qualified N-channel 600 V, 37 mΩ typ. (42 mΩ max.), 66 A high-voltage Power MOSFET in TO-247 package with fast-recovery body diode, 121 nC total gate charge, and 50 V/ns dv/dt ruggedness - designed for ZVS phase-shift converters and full-bridge topologies in automotive-grade on-board chargers and industrial SMPS.

For engineers reviewing the STW72N60DM2AG datasheet, STW72N60DM2AG pinout, STW72N60DM2AG application, or STW72N60DM2AG equivalent, key selection criteria include its 150 ns typ. reverse recovery time (trr), 0.75 µC Qrr at 25 °C, 100% avalanche tested capability, low Coss eq. (470 pF), and Zener-protected gate - all critical for high-frequency hard-switched and resonant converter reliability.

Technical Context

This MDmesh DM2-series MOSFET integrates a fast-recovery intrinsic body diode with ultra-low Qrr (0.75–2.5 µC) and trr (150–250 ns), enabling efficient operation in bridge configurations without external anti-parallel diodes. Its 2.8 pF Crss and 5508 pF Ciss support precise gate drive timing control under high dv/dt stress.

The device features 50 V/ns MOSFET dv/dt ruggedness and 50 V/ns diode recovery dv/dt rating, validated per test conditions in DS10785 Rev 6. Its RDS(on) remains stable across −55 to 150 °C (1.8× rise at TJ = 150 °C), and junction-to-case thermal resistance is 0.28 °C/W - essential for thermally constrained automotive power modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 480 V DC bus designs with 25 % voltage margin for transient overvoltage handling
R_DS(on) max	42 mΩ at V_GS = 10 V, I_D = 33 A - enables <1.4 W conduction loss at 66 A continuous current (T_C = 25 °C)
Q_g	121 nC - determines gate driver power requirement and switching speed in 100–500 kHz ZVS applications
trr / Qrr	150 ns / 0.75 µC (25 °C); 250 ns / 2.5 µC (150 °C) - minimizes commutation losses and EMI in hard-switched bridges
dv/dt ruggedness	50 V/ns - ensures reliable operation during fast voltage transients without spurious turn-on
E_AS	1.5 J - guarantees single-pulse unclamped inductive switching survivability in fault conditions
R_thJC	0.28 °C/W - allows 446 W power dissipation at T_C = 25 °C, supporting high-power density heatsink integration

Pinout & Package

TO-247 package: isolated tab (Drain), 3-pin through-hole outline with center-tab thermal path. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Low-impedance control input requiring ≤121 nC charge for full enhancement; Zener-protected against ±25 V transients
Pin 2 (D / Tab)	Drain terminal (metal tab)	High-current, high-voltage output node; electrically connected to case - requires insulated mounting in floating topologies
Pin 3 (S)	Source terminal	Reference node for gate drive; carries full load current (66 A continuous) and source-drain diode return path

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and charging systems per stress test requirements (HTOL, TC, UHAST)
Fast-recovery body diode	trr = 150 ns (25 °C), Qrr = 0.75 µC - eliminates need for external SiC/Schottky anti-parallel diodes in LLC and phase-shift converters
Extremely low gate charge	Q_g = 121 nC, Q_gd/Q_gs = 2.35 - enables clean Miller plateau transition and reduces driver IC power loss
100% avalanche tested	E_AS = 1.5 J at T_J = 25 °C - ensures robustness against inductive switching faults without derating
Zener-protected gate	±25 V V_GS rating with integrated protection - prevents gate oxide rupture during ESD or layout-induced overshoot

Applications

On-Board Charger (OBC)

Industrial SMPS

Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11–22 kW EV on-board chargers operating at 100–300 kHz.

IC Role / Device Role / Timing Role: Primary-side switching device in dual-active-bridge (DAB) topology; handles 66 A RMS current with ZVS-assisted turn-on.

Use Value: Low Qrr and fast trr reduce dead-time losses by >35 % vs. standard superjunction MOSFETs, improving system efficiency to >96 %.

Use Scenario: High-efficiency 3 kW telecom rectifier with active clamp forward or phase-shift full-bridge architecture.

IC Role / Device Role / Timing Role: Main switch in primary-side full-bridge; operates with 50 V/ns dv/dt stress during zero-voltage transitions.

Use Value: 0.28 °C/W R_thJC and 446 W P_TOT allow compact heatsinking while maintaining T_J < 125 °C at full load.

Automotive DC-DC Converter

Server PSU

Use Scenario: 48 V–12 V bidirectional buck-boost converter in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: Synchronous rectifier and high-side switch in interleaved topology; conducts 66 A pulsed current with 264 A peak capability.

Use Value: AEC-Q101 qualification and 150 °C T_J rating ensure compliance with ASIL-B functional safety requirements.

Use Scenario: Primary-side switch in 3.3 kW server power supply using asymmetric half-bridge (AHB) topology.

IC Role / Device Role / Timing Role: High-voltage switch subjected to repetitive unclamped inductive switching; relies on 1.5 J E_AS for fault tolerance.

Use Value: 100 % avalanche testing and 50 V/ns dv/dt ruggedness eliminate need for snubbers, reducing BOM count and layout area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, fast-diode MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW78N60DM2	600 V, 32 mΩ typ., 78 A, same MDmesh DM2 platform but higher R_DS(on) and Q_g (135 nC)	Higher conduction loss at <40 A; less suitable for space-constrained OBCs needing minimal thermal footprint	Prefer when higher current headroom is required and gate drive capability supports 135 nC charge
IPP60R041C7	600 V, 41 mΩ typ., 62 A, CoolMOS C7; no integrated fast diode - requires external SiC diode	Higher system-level complexity and cost due to discrete diode; superior EMI performance in soft-switching	Choose when diode recovery is managed externally and lowest C_oss (35 pF) is prioritized over integrated simplicity

Compared with STW78N60DM2 and IPP60R041C7, STW72N60DM2AG delivers optimal balance of low Qrr (0.75 µC), moderate Q_g (121 nC), and AEC-Q101 compliance - making it the preferred choice for automotive-grade ZVS converters where integrated diode reliability and thermal efficiency are jointly critical.

Availability

STW72N60DM2AG is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial SMPS, 48 V DC-DC converters, and server PSUs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STW72N60DM2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power, analog, MEMS, and microcontroller technologies for automotive, industrial, and consumer markets.

STW72N60DM2AG belongs to the MDmesh DM2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-frequency resonant and soft-switching power converters demanding low Qrr, fast trr, and automotive-grade reliability.

FAQ

Is STW72N60DM2AG pin-compatible with STW78N60DM2?

Yes - both use identical TO-247 package with Gate (Pin 1), Drain/Tab (Pin 2), and Source (Pin 3) pinout. Mechanical dimensions and mounting hole positions match per DS10785 Rev 6 Figure 19. No PCB redesign is needed when substituting within the same MDmesh DM2 family.

What is the maximum recommended gate resistor for hard-switching at 200 kHz?

For 200 kHz hard-switching with 121 nC Q_g, a 4.7 Ω gate resistor is validated per DS10785 Figure 13 and Table 6 (td(on) = 32 ns, tf = 10.4 ns). Lower values (≤2.2 Ω) risk excessive dV/dt-induced oscillation; higher values (>10 Ω) increase switching losses beyond 1.2 W at full load.

Does the body diode require external snubbing in phase-shift full-bridge operation?

No - the fast-recovery body diode (trr = 150 ns, Qrr = 0.75 µC) is characterized for zero-voltage switching in bridge topologies per DS10785 Section 2. Its low stored charge and controlled recovery slope eliminate need for RC snubbers when operated within specified di/dt (≤800 A/μs) and VDD (≤480 V) limits.

Can STW72N60DM2AG be used in non-automotive industrial applications despite AEC-Q101 qualification?

Yes - AEC-Q101 qualification indicates enhanced reliability (HTOL, temperature cycling, ESD), but the device is fully specified for industrial use per its absolute maximum ratings (T_J = −55 to 150 °C, V_DS = 600 V) and thermal data (R_thJC = 0.28 °C/W). No derating is required outside automotive environments.

STW72N60DM2AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DM2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 66A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 121 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 5508 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 446W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW72N60DM2AG FAQ

1.How can I place an order for STW72N60DM2AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STW72N60DM2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW72N60DM2AG reliable?

The price and inventory of STW72N60DM2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW72N60DM2AG is usually 5 days.

3.What payment methods are accepted for STW72N60DM2AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW72N60DM2AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW72N60DM2AG?

STW72N60DM2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW72N60DM2AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW72N60DM2AG?

For technical support, including STW72N60DM2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW72N60DM2AG requirements.

6.How does Aetrix verify that STW72N60DM2AG is sourced from the original manufacturer or authorized distributors?

All STW72N60DM2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW72N60DM2AG meets industry standards.

7.What is the process for return or replacement of STW72N60DM2AG?

All STW72N60DM2AG units undergo pre-shipment inspection (PSI). If there is an issue with STW72N60DM2AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW72N60DM2AG part is unused and in its original packaging.

Return procedure for STW72N60DM2AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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