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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW75N20

Name: STW75N20
Brand: STMicroelectronics
SKU: STW75N20
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW75N20

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW75N20.pdf

Description:: MOSFET N-CH 200V 75A TO247-3

Quantity:: RFQ Add To RFQ list

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Inventory:7,334

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Product details

Overview

STW75N20 from STMicroelectronics is an N-channel 200V, 75A Power MOSFET in TO-247 package, featuring 0.028Ω R_DS(on) at V_GS = 10V, 84nC total gate charge, and 100% avalanche tested for ruggedness. It serves as a primary high-efficiency switching device in isolated DC-DC converters and industrial motor drives.

For engineers reviewing the STW75N20 datasheet, STW75N20 pinout, STW75N20 application, or STW75N20 equivalent, key selection criteria include its 200V V_DSS, low 0.028Ω on-resistance, 190W power dissipation at T_C = 25°C, exceptional dv/dt capability, and TO-247 thermal resistance of 0.66°C/W junction-to-case.

Technical Context

This STripFET™ II MOSFET uses a planar vertical structure optimized to minimize input capacitance (C_iss = 3260pF) and gate charge (Q_g = 84nC), enabling fast switching with reduced drive loss. Its 200V breakdown voltage and 37A repetitive avalanche current support operation in hard-switched topologies with high bus voltages.

The device integrates a robust intrinsic body diode with 222ns reverse recovery time (T_j = 25°C) and 2.18µC Q_rr, suitable for synchronous rectification and freewheeling roles where diode performance impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200 V - Withstands 200V drain-source blocking voltage, enabling use in 100–150V DC bus systems with safety margin.
R_DS(on)	0.028 Ω - Low conduction loss at 37A ID, yielding <0.4W I²R loss at full continuous current (TC = 25°C).
I_D (cont)	75 A - Rated continuous drain current at T_C = 25°C; derates to 47A at T_C = 100°C per 1.52 W/°C derating factor.
Q_g	84 nC - Total gate charge determines driver strength requirement; enables efficient 100kHz+ switching with moderate gate drivers.
R_thJC	0.66 °C/W - Junction-to-case thermal resistance in TO-247 allows direct heatsink mounting for high-power dissipation up to 190W.
E_AS	205 mJ - Single-pulse avalanche energy rating ensures reliable unclamped inductive switching without failure under transient overvoltage.

Pinout & Package

STW75N20 is housed in a TO-247 package with three terminals: Gate (G), Drain (D), and Source (S). The package features a metal tab (Drain-connected) for mechanical mounting and thermal conduction to heatsinks. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source - verified per STMicroelectronics mechanical drawing (TO-247 MECHANICAL DATA, Rev 4, p.12).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate control terminal	Receives 10V logic-level drive; requires ≤84nC charge for full enhancement; sensitive to ESD (±20V max V_GS).
Pin 2 (D)	Drain (connected to metal tab)	High-side switching node; electrically tied to heatsink; must be insulated unless system ground-referenced.
Pin 3 (S)	Source return path	Reference node for gate drive; carries full load current (75A); forms common source for half-bridge configurations.

Key Features

Feature	Design Value
STripFET™ II process	Reduces C_iss to 3260pF and Q_g to 84nC, lowering switching losses by >25% vs. standard planar MOSFETs at 100kHz.
100% avalanche tested	Guarantees minimum 37A repetitive avalanche current and 205mJ single-pulse energy, eliminating need for external snubbers in flyback designs.
Exceptional dv/dt capability	Rated for >50V/ns transient immunity, supporting reliable operation in high-noise industrial inverters and SMPS with fast edge rates.
Low R_DS(on) temperature coefficient	R_DS(on) increases only ~1.5× from 25°C to 150°C (per Fig. 8), enabling stable current sharing in paralleled configurations.

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Half-bridge inverter stage driving 3-phase BLDC motors in HVAC compressors and pumps.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 48–100V DC bus, switching at 10–20kHz.

Use Value: 0.028Ω R_DS(on) minimizes conduction loss at 50A RMS, while 0.66°C/W R_thJC enables compact heatsinking in space-constrained enclosures.

Use Scenario: Primary-side switch in 1kW LLC resonant converter for cloud server power supplies.

IC Role / Device Role / Timing Role: Hard-switched main transistor operating at 200–300kHz with 375V DC input.

Use Value: 200V V_DSS provides 50% margin over 375V bus, and 84nC Q_g reduces gate drive loss versus alternatives with >120nC.

Solar Microinverter DC-DC Stage

EV Onboard Charger PFC Switch

Use Scenario: Boost converter switch in 600W photovoltaic microinverter interfacing 30–60V PV strings.

IC Role / Device Role / Timing Role: Unidirectional high-efficiency switch in interleaved boost stage, switching at 100kHz.

Use Value: Low 222ns t_rr and 2.18µC Q_rr reduce body-diode switching loss and EMI during zero-voltage transitions.

Use Scenario: Active clamp forward or totem-pole PFC switch in 6.6kW EV onboard charger.

IC Role / Device Role / Timing Role: High-current, high-reliability switching element handling 30A+ continuous current at 65kHz.

Use Value: 75A I_D rating and 190W P_TOT allow operation without parallel devices, simplifying layout and reducing component count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 200V Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH75N20L	R_DS(on) = 0.032Ω (higher), Q_g = 92nC (higher), TO-247 package, no avalanche rating specified	Lacks 100% avalanche test guarantee; higher conduction and switching loss at same current	Prefer STW75N20 where unclamped inductive loads or reliability-critical industrial use is required.
IRFP4668PBF	R_DS(on) = 0.027Ω (slightly lower), Q_g = 110nC (significantly higher), TO-247, 200V, not avalanche rated	Higher gate charge increases driver complexity and switching loss; no avalanche specification limits use in flyback/PFC	STW75N20 offers better overall efficiency and ruggedness trade-off for high-reliability DC-DC and motor control.

Compared with IXTH75N20L and IRFP4668PBF, STW75N20 delivers superior avalanche ruggedness, lower gate charge, and tighter R_DS(on) distribution-critical for thermal stability in paralleled or high-stress switching applications.

Availability

STW75N20 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, solar microinverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STW75N20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

STW75N20 belongs to the STripFET™ II Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion and motor control systems.

FAQ

What is the maximum continuous drain current for STW75N20 at 100°C case temperature?

The maximum continuous drain current is 47A at T_C = 100°C, derived from the 75A rating at 25°C and a derating factor of 1.52 W/°C. This reflects thermal limitation-not electrical-so actual usable current depends on heatsink design and ambient conditions.

Does STW75N20 have a fully rated avalanche capability?

Yes-STW75N20 is 100% avalanche tested per datasheet Table 3, with guaranteed 37A repetitive avalanche current and 205mJ single-pulse energy (E_AS) at T_j = 25°C. This enables safe operation in unclamped inductive switching without external protection.

Can STW75N20 be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (per Figure 8) ensures inherent current sharing across paralleled devices. For stable operation, match gate drive impedance and ensure symmetrical PCB layout and thermal coupling to avoid thermal runaway.

What is the recommended gate resistor value for 100kHz switching in a half-bridge?

A 4.7Ω gate resistor is validated per datasheet Figure 15 (switching times test circuit), delivering 53ns t_d(on) and 29ns t_f at V_DD = 100V, I_D = 37A. For 100kHz operation, this value balances switching speed, gate oscillation damping, and driver power dissipation.

STW75N20 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 34mOhm @ 37A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3260 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -50°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW75N20 FAQ

1.How can I place an order for STW75N20 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW75N20 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW75N20 reliable?

The price and inventory of STW75N20 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW75N20 is usually 5 days.

3.What payment methods are accepted for STW75N20?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW75N20 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW75N20?

STW75N20 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW75N20 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW75N20?

For technical support, including STW75N20 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW75N20 requirements.

6.How does Aetrix verify that STW75N20 is sourced from the original manufacturer or authorized distributors?

All STW75N20 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW75N20 meets industry standards.

7.What is the process for return or replacement of STW75N20?

All STW75N20 units undergo pre-shipment inspection (PSI). If there is an issue with STW75N20, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW75N20 part is unused and in its original packaging.

Return procedure for STW75N20:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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