STMicroelectronics STW75N60DM6

Overview

STW75N60DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 series, designed for high-efficiency bridge topologies and ZVS phase-shift converters. It delivers 600 V V_(BR)DSS, 36 mΩ R_DS(on) max at 10 V V_GS, 72 A continuous drain current at T_C = 25 °C, and features a fast-recovery body diode with Q_rr = 0.7 µC and t_rr = 140 ns at 25 °C - enabling reduced switching losses in hard- and soft-switching SMPS.

For engineers reviewing the STW75N60DM6 datasheet, STW75N60DM6 pinout, STW75N60DM6 application, or STW75N60DM6 equivalent, key selection criteria include its 100 V/ns dv/dt ruggedness, 117 nC total gate charge, 1.6 V source-drain forward voltage at 72 A, 100% avalanche tested rating (E_AS = 1.7 J), and TO-247 package thermal resistance of 0.28 °C/W.

Technical Context

This MOSFET employs ST's MDmesh DM6 silicon technology, optimized for ultra-low Q_rr and trr while maintaining industry-leading R_DS(on)/area trade-off. Its Zener-protected gate structure ensures ±25 V V_GS tolerance and robust ESD immunity, and the intrinsic fast-recovery body diode eliminates need for external anti-parallel diodes in synchronous rectification and LLC resonant stages.

The device operates reliably under extreme dV/dt stress (100 V/ns) and di/dt transients (1000 A/μs), validated per unclamped inductive switching tests. Its SOA supports single-pulse operation up to 240 A IDM with pulse widths from 100 μs to 10 ms, and junction temperature range extends from –55 °C to 150 °C for industrial and telecom power supply use.

Key Specifications

Pinout & Package

STW75N60DM6 is housed in a TO-247 package with 3 leads: Drain (Tab), Gate (Lead 1), Source (Lead 3). The metal tab is electrically connected to the Drain terminal and serves as primary thermal path to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXFH75N60X3 and IPP60R041C7, STW75N60DM6 uniquely combines low R_DS(on), ultra-low Q_rr, and 100 V/ns dv/dt ruggedness in a single TO-247 package - making it optimal for high-frequency, high-reliability ZVS and resonant converters where diode integration and transient immunity are mandatory.

Availability

STW75N60DM6 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, telecom rectifiers, EV onboard chargers, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for STW75N60DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh DM6 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching topologies including ZVS phase-shifted full-bridge, LLC resonant, and interleaved PFC converters.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW75N60DM6 supports 45 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12280 Rev 4. This derating reflects thermal limits of the TO-247 package and silicon die; operation above this requires active cooling or pulse-width limitation per SOA curves.

Does STW75N60DM6 require an external gate resistor for stability?

Yes - a 4.7 Ω gate resistor is used in the official switching time test circuit (Figure 13), and ST recommends 3–10 Ω for EMI control and oscillation suppression. Lower values increase switching speed but risk overshoot; higher values reduce dv/dt stress but raise switching losses.

Is the body diode fully rated for hard commutation?

Yes - the body diode is characterized for ISD = 72 A continuous and ISDM = 240 A pulsed, with t_rr and Q_rr measured under standardized inductive load conditions (Figure 15). Its fast recovery and low Q_rr make it suitable for synchronous rectification without external diode parallelization.

Can STW75N60DM6 replace STW75N60M5 in existing designs?

Yes - STW75N60DM6 is a direct drop-in replacement for STW75N60M5 in TO-247 socketed layouts, offering improved R_DS(on) (36 mΩ vs 42 mΩ), lower Q_rr (0.7 µC vs 1.1 µC), and enhanced dv/dt ruggedness (100 V/ns vs 75 V/ns), with identical pinout and footprint.