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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW75N60M6

Name: STW75N60M6
Brand: STMicroelectronics
SKU: STW75N60M6
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW75N60M6

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW75N60M6.pdf

Description:: MOSFET N-CH 600V 72A TO247

Quantity:: RFQ Add To RFQ list

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Inventory:9,604

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Product details

Overview

STW75N60M6 from STMicroelectronics is a 600 V, 72 A N-channel MDmesh M6 superjunction power MOSFET in TO-247 package, featuring 32 mΩ typical R_DS(on), 106 nC total gate charge, and 100% avalanche-tested ruggedness. It delivers low conduction loss and high dv/dt ruggedness (100 V/ns) for hard-switching and resonant topologies including LLC and boost PFC converters in industrial SMPS.

For engineers reviewing the STW75N60M6 datasheet, STW75N60M6 pinout, STW75N60M6 application, or STW75N60M6 equivalent, key selection criteria include its 32 mΩ R_DS(on) at 10 V, 15 V/ns diode recovery dv/dt rating, 1.4 J single-pulse avalanche energy, and Zener-protected gate for robust gate drive design.

Technical Context

This MOSFET employs ST's MDmesh M6 silicon technology, optimizing R_DS(on) per die area while maintaining fast switching with low C_iss (4850 pF) and ultra-low C_rss (3.5 pF). Its 1.5 Ω intrinsic gate resistance and 45 nC Q_gd/Q_g ratio support clean turn-off in high-frequency converters.

The device integrates a robust body diode with 367 ns reverse recovery time (T_J = 25 °C) and 6.4 µC Q_rr, enabling reliable operation in synchronous rectification and bidirectional power stages. Thermal resistance R_thJC is 0.28 °C/W, supporting high-power density designs up to 446 W at T_C = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands DC bus voltages up to 480 V in continuous operation with margin for transients.
R_DS(on) typ.	32 mΩ @ V_GS = 10 V - Enables <1.2 W conduction loss at 72 A, reducing heatsink requirements.
Q_g	106 nC - Dictates gate driver current demand; requires ≥2 A peak drive for 100 ns switching transitions.
dv/dt ruggedness	100 V/ns - Sustains rapid voltage transients without false turn-on in high-noise bridge-leg environments.
E_AS	1.4 J - Absorbs unclamped inductive energy during fault conditions without failure.
t_r/t_f	38 ns / 12 ns - Supports >500 kHz switching in LLC resonant converters with minimal overlap loss.
T_J max	150 °C - Allows operation in sealed enclosures with limited airflow when derated per SOA curves.

Pinout & Package

TO-247 package: isolated metal tab (Drain), 3-pin through-hole outline with standard lead spacing. Mounting surface provides direct thermal path to heatsink via Drain-connected tab.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control terminal; requires low-inductance gate loop to suppress oscillation due to 1.5 Ω intrinsic R_g.
2 (D, TAB)	Drain (exposed metal tab)	Main high-voltage power terminal; electrically and thermally coupled to heatsink; must be insulated if heatsink is grounded.
3 (S)	Source	Reference node for gate drive and current sensing; connects to low-side switch node or source of complementary device.

Key Features

Feature	Design Value
MDmesh M6 silicon technology	32 mΩ R_DS(on) at 600 V enables 25% lower conduction loss vs prior MDmesh M5 generation in same footprint.
Zener-protected gate	Integrated gate oxide protection clamps V_GS to ±25 V, eliminating need for external gate Zener in most flyback/LLC drivers.
100% avalanche tested	Every unit validated for repetitive E_AS = 1.4 J, ensuring field reliability under unclamped inductive switching stress.
Low C_rss/C_iss ratio	3.5 pF / 4850 pF = 0.07% - Minimizes Miller effect, enabling stable operation with high dv/dt and reduced gate drive loss.

Applications

Industrial Switch-Mode Power Supplies

LLC Resonant Converters

Use Scenario: Primary-side switch in 1–3 kW telecom rectifiers operating at 100–300 kHz with 400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage power switch handling full load current; operates in hard-switched or quasi-resonant mode.

Use Value: 32 mΩ R_DS(on) reduces conduction loss by 1.8 W vs comparable 45 mΩ devices, improving system efficiency by 0.4% at full load.

Use Scenario: Upper switch in half-bridge LLC tank driving 12 V/100 A output for server VRMs.

IC Role / Device Role / Timing Role: Zero-voltage switching (ZVS) enabled by low Q_gd/Q_g ratio and fast t_f (12 ns).

Use Value: 45 nC Q_gd ensures clean ZVS transition across 90–99% duty cycle range, minimizing dead-time losses.

Boost PFC Front-Ends

Motor Drive Inverters

Use Scenario: Boost switch in active PFC stage for 3.3 kW industrial AC-DC supplies (230 VAC input).

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) switch with 50–100 kHz switching frequency.

Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during line-voltage transients, eliminating need for snubbers.

Use Scenario: Phase-leg switch in 7.5 kW servo drive inverter with 15 kHz PWM carrier.

IC Role / Device Role / Timing Role: High-current, high-reliability switching element in IGBT-replacement topology.

Use Value: 72 A continuous current rating at T_C = 100 °C supports 150% overload for 60 s without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C7	650 V, 190 mΩ R_DS(on), 33 A ID, CoolMOS C7 - higher R_DS(on) but lower Q_g (62 nC)	Better suited for >200 kHz soft-switching where gate loss dominates conduction loss	Select when prioritizing gate drive efficiency over conduction loss in low-current, high-frequency PFC.
IXFH70N60X3	600 V, 42 mΩ R_DS(on), 70 A ID, HiPerFET X3 - higher R_DS(on), no integrated Zener, 120 nC Q_g	Limited avalanche rating (E_AS = 0.8 J); requires external gate clamp	Choose only when cost sensitivity outweighs need for guaranteed avalanche ruggedness and gate protection.

Compared with IPP60R190C7 and IXFH70N60X3, STW75N60M6 offers the lowest R_DS(on) and highest avalanche energy among 600 V 70+ A MOSFETs, making it optimal for high-efficiency, high-reliability industrial SMPS where conduction loss and fault tolerance are critical.

Availability

STW75N60M6 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, LLC resonant converters, and boost PFC front-ends requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STW75N60M6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh M6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in industrial and telecom power systems.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STW75N60M6 supports 45 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12410 Rev 3. This rating accounts for thermal derating from the 72 A value at 25 °C and aligns with its 0.28 °C/W junction-to-case thermal resistance and 150 °C maximum junction temperature.

Does this MOSFET include integrated gate protection?

Yes - the STW75N60M6 features an integrated Zener diode between gate and source, clamping V_GS to ±25 V. This eliminates the need for external gate protection in most applications, including those with inductive gate drive loops or noisy PCB layouts.

How does its body diode performance compare to standard silicon MOSFETs?

Its body diode exhibits 367 ns reverse recovery time and 6.4 µC Q_rr at T_J = 25 °C, significantly faster than legacy planar MOSFETs. The low Q_rr and soft recovery characteristic reduce EMI and switching loss in hard-commutated topologies like boost PFC.

Is the TO-247 package lead-free and RoHS-compliant?

Yes - the STW75N60M6 is offered in ECOPACK2-compliant TO-247 packaging, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. ST confirms halogen-free status and lead-free terminations per JEDEC J-STD-609.

STW75N60M6 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ M6

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 72A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 36mOhm @ 36A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 106 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 4850 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 446W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW75N60M6 FAQ

1.How can I place an order for STW75N60M6 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW75N60M6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW75N60M6 reliable?

The price and inventory of STW75N60M6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW75N60M6 is usually 5 days.

3.What payment methods are accepted for STW75N60M6?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW75N60M6 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW75N60M6?

STW75N60M6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW75N60M6 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW75N60M6?

For technical support, including STW75N60M6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW75N60M6 requirements.

6.How does Aetrix verify that STW75N60M6 is sourced from the original manufacturer or authorized distributors?

All STW75N60M6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW75N60M6 meets industry standards.

7.What is the process for return or replacement of STW75N60M6?

All STW75N60M6 units undergo pre-shipment inspection (PSI). If there is an issue with STW75N60M6, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW75N60M6 part is unused and in its original packaging.

Return procedure for STW75N60M6:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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