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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW75N65DM6-4

Name: STW75N65DM6-4
Brand: STMicroelectronics
SKU: STW75N65DM6-4
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW75N65DM6-4

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-4

Datasheet:: STW75N65DM6-4.pdf

Description:: N-CHANNEL 650 V, 33 MOHM TYP., 7

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW75N65DM6-4 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 fast-recovery diode series, rated at 650 V V_DS, 33 mΩ typ. R_DS(on), and 75 A continuous drain current at T_C = 25 °C. It features an integrated fast-recovery body diode, 100% avalanche tested operation, and an extra driver source pin for improved gate control in hard-switched bridge topologies.

For engineers reviewing the STW75N65DM6-4 datasheet, STW75N65DM6-4 pinout, STW75N65DM6-4 application, or STW75N65DM6-4 equivalent, key selection criteria include its 149 ns typ. reverse recovery time (t_rr), 0.92 µC Q_rr, 118 nC total gate charge, 100 V/ns dv/dt ruggedness, and TO-247-4 package with dedicated driver source terminal.

Technical Context

This MOSFET implements ST's MDmesh DM6 silicon technology optimized for ZVS phase-shift converters and high-efficiency LLC and full-bridge topologies. Its low C_oss,eq (960 pF) and ultra-low Q_rr enable reduced switching losses during hard commutation while maintaining robust 100 V/ns dv/dt immunity under dynamic recovery conditions.

The TO-247-4 package integrates separate power source (pin 2) and driver source (pin 3) terminals to minimize source inductance in the gate loop, directly improving turn-off control and reducing voltage overshoot during high-di/dt switching events.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for primary-side switching in 400 V bus industrial SMPS and solar inverters.
R_DS(on) max	36 mΩ - Confirmed worst-case on-resistance at 10 V V_GS, defining conduction loss at full load.
Q_rr	0.92 µC (T_J = 25 °C) - Low reverse recovery charge enabling efficient operation in hard-switched bridges without snubbers.
t_rr	149 ns - Fast body diode recovery time critical for minimizing cross-conduction loss in synchronous rectification and phase-shifted full-bridge designs.
dv/dt ruggedness	100 V/ns - Verified immunity to parasitic turn-on during high-slew-rate voltage transients in high-frequency converters.
Q_g	118 nC - Total gate charge determining driver strength requirement and switching speed trade-off in 100–300 kHz applications.
R_thJC	0.26 °C/W - Junction-to-case thermal resistance enabling 480 W dissipation at T_C = 25 °C with appropriate heatsinking.

Pinout & Package

Supplied in a TO-247-4 package with isolated source terminals: Drain (pins 1 and tab), Gate (pin 4), Driver Source (pin 3), and Power Source (pin 2). This 4-pin configuration decouples gate drive return path from main power return to suppress common-source inductance effects.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 + Tab	Drain	Main high-side power terminal; electrically connected to metal tab for direct heatsink mounting and low-inductance thermal path.
Pin 2	Power Source	High-current source return for main power loop; carries full load current but excluded from gate drive path.
Pin 3	Driver Source	Dedicated low-inductance gate return path; isolates gate loop from power loop to improve switching stability and reduce V_GS ringing.
Pin 4	Gate	Control input requiring 10 V drive; accepts standard 3.3 V/5 V logic-level gate drivers via external level-shifting or dedicated high-side drivers.

Key Features

Feature	Design Value
Fast-recovery body diode	149 ns t_rr and 0.92 µC Q_rr at 25 °C enable reliable freewheeling in hard-switched topologies without external diodes.
Extra driver source pin	Pin 3 provides dedicated gate return path, reducing effective gate loop inductance by >50% versus standard TO-247-3 layouts.
100% avalanche tested	Each unit validated for repetitive unclamped inductive switching up to 9 A I_AR and 1.9 J E_AS at T_J = 25 °C.
Zener-protected gate	Integrated gate oxide protection clamps V_GS to ±25 V, eliminating need for external gate Zener diodes in most industrial drive applications.
Low C_iss/C_oss ratio	5700 pF C_iss and 280 pF C_oss yield favorable Miller ratio (Crss/Ciss ≈ 0.053), supporting stable high-speed switching with moderate gate resistance.

Applications

Industrial Solar Inverters

Server PSU Primary Switches

Use Scenario: High-efficiency 650 V DC-link switching in three-phase string inverters operating at 50–100 kHz with forced-air cooling.

IC Role / Device Role / Timing Role: Primary-side hard-switched MOSFET in full-bridge topology handling 75 A peak phase current with ZVS-assisted turn-on.

Use Value: 0.92 µC Q_rr reduces body diode conduction loss by 35% vs prior-generation MDmesh devices, directly improving system efficiency at partial load.

Use Scenario: Primary-side switch in 3 kW+ 80 PLUS Titanium server PSUs using asymmetric half-bridge or phase-shifted full-bridge architecture.

IC Role / Device Role / Timing Role: High-voltage switching element operating at 100–200 kHz with tight dead-time control enabled by fast t_rr and low Q_gd.

Use Value: 47 nC Q_gd and 100 V/ns dv/dt rating allow reliable operation with 50 ns dead time, minimizing shoot-through risk in high-density power stages.

EV Onboard Chargers

Industrial Motor Drives

Use Scenario: AC/DC stage in bidirectional 11 kW OBCs implementing dual-active-bridge topology with 650 V input.

IC Role / Device Role / Timing Role: High-side switch in DAB H-bridge leg, subjected to repeated reverse recovery during zero-voltage transitions.

Use Value: 280 ns t_rr at 150 °C ensures predictable recovery behavior across full temperature range, enabling deterministic dead-time tuning.

Use Scenario: Inverter output stage in 30–50 kW variable-frequency drives for HVAC and pump systems operating at 4–8 kHz PWM.

IC Role / Device Role / Timing Role: High-current switching device in 650 V IGBT replacement design, leveraging low R_DS(on) and avalanche ruggedness.

Use Value: 33 mΩ R_DS(on) at 10 V V_GS delivers lower conduction loss than comparable 650 V IGBTs below 10 kHz, improving thermal margin at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFH75N65X2	Higher R_DS(on) (42 mΩ), higher Q_rr (1.2 µC), no driver source pin.	Lacks dedicated driver source; requires careful PCB layout to manage gate loop inductance.	Preferred where cost sensitivity outweighs marginal efficiency gain and layout complexity is manageable.
IPP65R041CFD7	Lower R_DS(on) (35 mΩ typ.), higher C_iss (6200 pF), no avalanche rating published.	No 100% avalanche test data; unsuitable for unclamped inductive loads without derating.	Selected when conduction loss dominates and strict avalanche reliability is not required per IEC 61800-5-1.

Compared with IXFH75N65X2 and IPP65R041CFD7, STW75N65DM6-4 uniquely combines verified avalanche ruggedness, lowest Q_rr in class, and driver-source isolation-making it optimal for ZVS-critical, high-reliability industrial and EV applications where layout constraints limit gate loop optimization.

Availability

STW75N65DM6-4 is available at Aetrix Electronics and suitable for industrial solar inverters, server power supplies, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for STW75N65DM6-4 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh DM6 product line, engineered specifically for high-efficiency, high-frequency switching power converters demanding low Q_rr, high dv/dt immunity, and robust avalanche performance in 650 V systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW75N65DM6-4 supports 47 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS13832 Rev 3. This derating reflects thermal limitations of the TO-247-4 package and must be applied when heatsink temperature exceeds 25 °C ambient.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The device operates reliably with 0 V to 10 V gate drive; its V_GS(th) range is 3.25–4.75 V, and gate oxide is Zener-protected to ±25 V. Negative gate bias is unnecessary and not recommended per ST application guidance.

How does the driver source pin (pin 3) differ from the power source pin (pin 2)?

Pin 3 (driver source) carries only gate return current and is routed separately to minimize inductance in the gate loop. Pin 2 (power source) carries full load current and connects to the main power ground plane. Their physical separation prevents gate signal distortion caused by source inductance coupling.

Is the 100 V/ns dv/dt rating tested under actual switching conditions?

Yes. The 100 V/ns rating is verified per test condition 3 in Table 1: V_DS ≤ 520 V, with confirmed immunity to spurious turn-on during high-slew-rate transients in hard-switched bridge configurations, as documented in the "MOSFET dv/dt ruggedness" parameter.

STW75N65DM6-4 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-4

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 75A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 36mOhm @ 37.5A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 118 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 5700 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 480W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-4

STW75N65DM6-4 FAQ

1.How can I place an order for STW75N65DM6-4 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW75N65DM6-4 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW75N65DM6-4 reliable?

The price and inventory of STW75N65DM6-4 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW75N65DM6-4 is usually 5 days.

3.What payment methods are accepted for STW75N65DM6-4?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW75N65DM6-4 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW75N65DM6-4?

STW75N65DM6-4 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW75N65DM6-4 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW75N65DM6-4?

For technical support, including STW75N65DM6-4 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW75N65DM6-4 requirements.

6.How does Aetrix verify that STW75N65DM6-4 is sourced from the original manufacturer or authorized distributors?

All STW75N65DM6-4 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW75N65DM6-4 meets industry standards.

7.What is the process for return or replacement of STW75N65DM6-4?

All STW75N65DM6-4 units undergo pre-shipment inspection (PSI). If there is an issue with STW75N65DM6-4, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW75N65DM6-4 part is unused and in its original packaging.

Return procedure for STW75N65DM6-4:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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