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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW78N65M5

Name: STW78N65M5
Brand: STMicroelectronics
SKU: STW78N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW78N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW78N65M5.pdf

Description:: MOSFET N-CH 650V 69A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW78N65M5 from STMicroelectronics is an AEC-Q101 qualified N-channel 650 V, 24 mΩ typ. (32 mΩ max.), 69 A MDmesh M5 Power MOSFET in TO-247 package, optimized for high-efficiency switching in automotive and industrial power converters.

For engineers reviewing the STW78N65M5 datasheet, STW78N65M5 pinout, STW78N65M5 application, or STW78N65M5 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, 50 V/ns dv/dt ruggedness, 100% avalanche tested capability, and low Q_g (203 nC) for fast switching with reduced gate driver loss.

Technical Context

This device employs ST's MDmesh M5 vertical superjunction process combined with PowerMESH horizontal layout to achieve ultra-low conduction loss while maintaining high voltage blocking and robust switching behavior. Its 150 °C maximum junction temperature and 0.28 °C/W R_thJC support high-power density thermal design.

The integrated body diode features 504 ns reverse recovery time (T_J = 25 °C) and 13 µC Q_rr, enabling reliable operation in hard-switched inductive loads without external snubbers in many cases. Gate threshold voltage is tightly specified at 3–5 V, ensuring stable turn-on under noisy automotive conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus designs with ≥30 % safety margin against transients
R_DS(on) max	32 mΩ - enables <1.1 W conduction loss at 69 A continuous drain current (T_C = 25 °C)
I_D cont @ T_C = 100 °C	41.5 A - defines usable current in thermally constrained enclosures without forced cooling
Q_g	203 nC - determines gate driver peak current requirement (~43 mA average for 100 kHz, 10 V swing)
dv/dt ruggedness	50 V/ns - ensures immunity to false triggering during fast voltage transitions in motor drives
E_AS	2000 mJ - allows unclamped inductive switching up to 15 A without failure under defined test conditions
C_iss	9000 pF - impacts gate drive loop stability and Miller effect sensitivity in high-side configurations

Pinout & Package

TO-247 package: isolated metal tab (Drain), 3-pin through-hole outline with standard lead spacing. Thermal path optimized via direct case-to-heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control input; requires ≤100 nA leakage budget and 1.5 Ω intrinsic resistance affecting gate ring-up
2 (D / TAB)	Drain (exposed metal tab)	Main high-voltage power terminal; electrically connected to heatsink-requires isolation if heatsink is grounded
3 (S)	Source	Power return reference; carries full load current and reverse recovery charge of internal body diode

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications per stress test requirements including HTGB, HTRB, and UIS
Extremely low R_DS(on)	24 mΩ typical reduces conduction losses by >35 % vs. prior-generation 650 V MOSFETs at same current density
100% avalanche tested	Each unit subjected to single-pulse unclamped inductive switching at rated I_AR = 15 A and E_AS = 2000 mJ
Low Q_gd/Q_gs ratio	84 nC / 50 nC = 1.68 - minimizes Miller-induced shoot-through risk in half-bridge topologies
High dv/dt capability	50 V/ns rating verified under V_DS ≤ 520 V - exceeds typical 400 V bus transient slew rates in EV traction inverters

Applications

Automotive On-Board Charger (OBC)

Industrial AC-DC Front-End

Use Scenario: Bidirectional PFC stage in 11 kW OBC converting 3-phase AC to 400 V DC bus with SiC diode rectification.

IC Role / Device Role / Timing Role: High-side switching element in totem-pole PFC, operating at 65–100 kHz with zero-voltage switching assist.

Use Value: 24 mΩ R_DS(on) cuts conduction loss by 1.8 W vs. legacy 650 V MOSFETs, improving system efficiency from 96.2 % to 96.7 % at full load.

Use Scenario: Active clamp forward converter in telecom rectifier supplying 54 V/100 A output from 380 V DC bus.

IC Role / Device Role / Timing Role: Main switch handling 69 A peak current with 500 ns dead-time constraints and 400 V bus transients.

Use Value: 50 V/ns dv/dt ruggedness prevents spurious turn-on during 400 V bus ringing, eliminating need for gate clamping circuits.

Solar String Inverter DC Optimizer

EV Traction Inverter Auxiliary Supply

Use Scenario: DC-DC buck converter regulating PV string voltage (up to 1000 V) to 12 V for module-level monitoring ICs.

IC Role / Device Role / Timing Role: Primary switch in isolated flyback topology operating at 150 kHz with 650 V blocking requirement.

Use Value: 2000 mJ E_AS withstands worst-case reflected surge from open-circuit PV string, avoiding external TVS protection.

Use Scenario: Isolated DC-DC converter powering 12 V control board from 400 V battery pack in hybrid vehicle auxiliary power unit.

IC Role / Device Role / Timing Role: Low-side switch in resonant LLC half-bridge, requiring low C_oss energy (E_oss = 35 µJ @ 400 V) for ZVS initiation.

Use Value: Co(er) = 205 pF yields 35 µJ stored output capacitance energy-enabling reliable ZVS down to 20 % load across -40 to 125 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH76N65X2	R_DS(on) = 27 mΩ max, Q_g = 185 nC, no AEC-Q101 certification	Not qualified for automotive use; higher R_DS(on) increases conduction loss by ~15 % at 69 A	Select only for industrial non-automotive systems where qualification is not required and gate drive margin is tighter
IPP65R190CFD7	R_DS(on) = 190 mΩ max, lower voltage rating (650 V), but includes fast-recovery co-packaged diode (t_rr = 32 ns)	Higher conduction loss dominates in high-current PFC; co-packaged diode eliminates discrete diode placement but adds cost	Prefer when diode recovery performance is critical and current rating ≤30 A; avoid above 40 A due to excessive I²R loss

Compared with IXTH76N65X2 and IPP65R190CFD7, STW78N65M5 uniquely balances AEC-Q101 compliance, lowest R_DS(on) among 650 V TO-247 MOSFETs, and proven avalanche robustness-making it the preferred choice for automotive-grade 69 A switching where reliability under transient stress is non-negotiable.

Availability

STW78N65M5 is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial AC-DC front-ends, and solar DC optimizers requiring stable component supply and long-term lifecycle assurance.

Supply support for STW78N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

The MDmesh M5 product line targets high-efficiency, high-reliability power conversion in automotive and industrial applications, leveraging superjunction technology to minimize R_DS(on) × area while maintaining rugged 650 V operation.

FAQ

Is STW78N65M5 pin-compatible with earlier STW78N65M2 or STW78N65M3 variants?

No. While all share the TO-247 package and identical pinout (G-D-S), STW78N65M5 uses MDmesh M5 silicon with different gate charge profile and dynamic characteristics. Layout changes are recommended to accommodate its lower Q_gd and higher C_iss, especially in high-frequency half-bridge designs.

What is the maximum allowable gate-source voltage during transient conditions?

The absolute maximum V_GS is ±25 V per datasheet Table 1. Operation beyond ±20 V risks permanent gate oxide damage. A gate driver with active clamping or Zener limiting to ±18 V is recommended for automotive environments with load-dump transients.

Does the 100% avalanche testing apply to repetitive or single-pulse conditions?

Testing is performed as single-pulse unclamped inductive switching (UIS) per JEDEC JESD24-11. Repetitive avalanche is not rated; the device must be operated within SOA limits shown in Figure 1, with pulse width constrained by junction temperature rise.

Can STW78N65M5 be used in synchronous rectification topologies?

No. It is an N-channel enhancement-mode MOSFET intended for high-side or low-side switching-not synchronous rectification. Its body diode has relatively high V_SD (1.5 V) and slow t_rr (504 ns), making it unsuitable as a controlled rectifier; dedicated SR controllers and logic-level FETs are required instead.

STW78N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 69A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 32mOhm @ 34.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 203 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 9000 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 450W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW78N65M5 FAQ

1.How can I place an order for STW78N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW78N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW78N65M5 reliable?

The price and inventory of STW78N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW78N65M5 is usually 5 days.

3.What payment methods are accepted for STW78N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW78N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW78N65M5?

STW78N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW78N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW78N65M5?

For technical support, including STW78N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW78N65M5 requirements.

6.How does Aetrix verify that STW78N65M5 is sourced from the original manufacturer or authorized distributors?

All STW78N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW78N65M5 meets industry standards.

7.What is the process for return or replacement of STW78N65M5?

All STW78N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STW78N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW78N65M5 part is unused and in its original packaging.

Return procedure for STW78N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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