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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW7N90K5

Name: STW7N90K5
Brand: STMicroelectronics
SKU: STW7N90K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW7N90K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW7N90K5.pdf

Description:: MOSFET N-CH 900V 7A TO247-3

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Product details

Overview

STW7N90K5 from STMicroelectronics is a 900 V, 7 A N-channel power MOSFET in TO-247 package, featuring 810 mΩ max R_DS(on), 12 nC total gate charge, and 100% avalanche tested operation. It employs MDmesh K5 vertical structure for ultra-low FoM and high-efficiency switching in high-voltage SMPS and industrial inverters.

For engineers reviewing the STW7N90K5 datasheet, STW7N90K5 pinout, STW7N90K5 application, or STW7N90K5 equivalent, key selection criteria include its 900 V V_DS, 1.14 °C/W R_thJC, 230 mJ E_AS, Zener-protected gate, and rugged dv/dt capability up to 50 V/ns.

Technical Context

This MOSFET uses ST's proprietary MDmesh K5 technology - a multi-drain vertical architecture that reduces cell pitch and enhances charge balancing. It delivers typ. 720 mΩ R_DS(on) at V_GS = 10 V and ID = 3.5 A, with low C_iss (425 pF) and C_oss (41 pF) enabling fast, low-loss hard-switching.

The device integrates a Zener-protected gate oxide and supports unclamped inductive switching with verified 2.4 A repetitive avalanche current. Its SOA is defined up to 10 ms pulses at T_C = 25 °C, and it maintains stable V_GS(th) (3–5 V) across –55 to 150 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	900 V - supports primary-side switching in 400 V AC-input offline SMPS and 690 V AC industrial drives
R_DS(on) max	810 mΩ - enables low conduction loss at 7 A continuous drain current (T_C = 25 °C)
Q_g	12 nC - reduces gate drive power and enables efficient operation with standard 10 V logic-level drivers
E_AS	230 mJ - ensures robustness against transient overloads without external snubbers
dv/dt ruggedness	50 V/ns - sustains fast voltage transients in high-frequency bridge configurations
R_thJC	1.14 °C/W - allows 110 W dissipation at T_C = 25 °C, supporting compact heatsink designs
V_SD	1.5 V - forward voltage of integrated body diode at I_SD = 7 A, limiting reverse-recovery losses

Pinout & Package

Supplied in TO-247 package with isolated tab (drain-connected), standard 3-pin layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Controls channel conduction; requires ≤ ±30 V V_GS; Zener-protected against ESD and overvoltage
Pin 2 (D / Tab)	Drain terminal (metal tab)	High-voltage output node; electrically connected to package tab; must be insulated from heatsink unless referenced to same potential
Pin 3 (S)	Source terminal	Reference node for gate drive and current sensing; ties to power ground or floating return in half-bridge topologies

Key Features

Feature	Design Value
MDmesh K5 vertical structure	Reduces on-resistance by ~30% vs. prior K3 generation while maintaining 900 V rating
Ultra-low gate charge (Q_g = 12 nC)	Enables >200 kHz switching in PFC stages without excessive driver loss or thermal stress
100% avalanche tested	Guarantees single-pulse E_AS ≥ 230 mJ and repetitive I_AR ≥ 2.4 A under production screening
Zener-protected gate	Clamps V_GS to ±20 V during transients, eliminating need for external gate Zener diodes
Low C_oss (41 pF)	Minimizes turn-off energy loss and improves zero-voltage switching (ZVS) margin in resonant converters

Applications

Industrial Motor Drives

Server & Telecom SMPS

Use Scenario: Three-phase inverter stage in 7.5 kW HVAC compressors operating from 400 V AC bus.

IC Role / Device Role / Timing Role: High-side switch in IGBT/MOSFET hybrid inverter leg; handles 7 A RMS phase current with <100 ns switching transitions.

Use Value: Low R_DS(on) and 50 V/ns dv/dt ruggedness prevent shoot-through and ensure reliable commutation under load transients.

Use Scenario: Active clamp forward or LLC resonant converter in 3 kW telecom rectifier with 380–400 V DC input.

IC Role / Device Role / Timing Role: Primary-side main switch; operates at 150–250 kHz with synchronous rectification on secondary side.

Use Value: 12 nC Q_g and 425 pF C_iss reduce gate drive loss and improve ZVS initiation, increasing efficiency above 95%.

Renewable Energy Inverters

High-Voltage DC-DC Converters

Use Scenario: DC link switching in 10 kW string solar inverter interfacing 1000 V PV arrays.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch in boost stage; subjected to repeated lightning surge and grid fault conditions.

Use Value: 230 mJ E_AS and 100% avalanche testing eliminate need for external clamping circuits during line surges.

Use Scenario: Isolated bidirectional DC-DC stage in EV battery management systems stepping 200–800 V between traction and auxiliary domains.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge topology; conducts 7 A continuously with forced-air cooling.

Use Value: 1.14 °C/W R_thJC enables direct mounting to cold plate, sustaining full 7 A current without derating at 100 °C case temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH7N90L2	900 V, 7 A, R_DS(on) = 950 mΩ, Q_g = 16 nC, TO-247	Higher conduction and switching loss; lower avalanche rating (E_AS = 140 mJ)	Acceptable where cost sensitivity outweighs efficiency targets and surge immunity requirements are moderate
IPP70R950P7XKSA1	700 V, 7.3 A, R_DS(on) = 950 mΩ, Q_g = 13 nC, TO-247	Lower voltage rating limits use to ≤600 V DC bus; superior FOM at 700 V but unsafe at 900 V	Only suitable for 400 V AC-input systems with headroom margin; not drop-in for 900 V designs

Compared with IXTH7N90L2 and IPP70R950P7XKSA1, STW7N90K5 uniquely combines 900 V rating, sub-810 mΩ R_DS(on), and 230 mJ avalanche energy - making it the only option qualified for 1000 V PV string and 690 V industrial drive applications requiring both voltage headroom and ruggedness.

Availability

STW7N90K5 is available at Aetrix Electronics and suitable for industrial motor drives, renewable energy inverters, server SMPS, and high-voltage DC-DC converters requiring stable component supply and long-term lifecycle support.

Supply support for STW7N90K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

The STW7N90K5 belongs to ST's MDmesh K5 high-voltage power MOSFET family, engineered specifically for high-efficiency, high-reliability switching in 800–1000 V DC applications such as solar inverters, industrial UPS, and telecom rectifiers.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STW7N90K5 supports 4.4 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11871 Rev 3. This derating reflects thermal limitations of the TO-247 package and ensures safe operation within SOA boundaries when mounted on a heatsink with ≤1.14 °C/W thermal resistance.

Does the device include an integrated body diode, and what are its recovery characteristics?

Yes - the STW7N90K5 features an integral source-drain diode with 1.5 V forward voltage at 7 A and 352 ns reverse recovery time (T_J = 25 °C). At 150 °C, t_rr increases to 525 ns and Q_rr rises to 4.94 µC, as measured under 100 A/µs di/dt and 60 V V_DD per Table 7.

Is the TO-247 package lead-free and RoHS-compliant?

Yes - the STW7N90K5 is supplied in an ECOPACK2-compliant TO-247 package, meeting RoHS Directive 2011/65/EU and REACH SVHC requirements. ST confirms lead-free terminations and halogen-free molding compound, with full compliance documentation available via ST's quality portal.

Can this MOSFET replace older STW7N90K3 or STW7N90K4 in existing designs?

Yes - STW7N90K5 is a direct replacement for STW7N90K3/K4 with identical pinout, package, and voltage rating. It improves R_DS(on) (720 mΩ typ. vs. 780 mΩ), reduces Q_g (12 nC vs. 14 nC), and enhances avalanche energy (230 mJ vs. 190 mJ), enabling higher efficiency and reliability without layout changes.

STW7N90K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 900 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW7N90K5 FAQ

1.How can I place an order for STW7N90K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW7N90K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW7N90K5 reliable?

The price and inventory of STW7N90K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW7N90K5 is usually 5 days.

3.What payment methods are accepted for STW7N90K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW7N90K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW7N90K5?

STW7N90K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW7N90K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW7N90K5?

For technical support, including STW7N90K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW7N90K5 requirements.

6.How does Aetrix verify that STW7N90K5 is sourced from the original manufacturer or authorized distributors?

All STW7N90K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW7N90K5 meets industry standards.

7.What is the process for return or replacement of STW7N90K5?

All STW7N90K5 units undergo pre-shipment inspection (PSI). If there is an issue with STW7N90K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW7N90K5 part is unused and in its original packaging.

Return procedure for STW7N90K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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