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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW80NE06-10

Name: STW80NE06-10
Brand: STMicroelectronics
SKU: STW80NE06-10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW80NE06-10

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW80NE06-10.pdf

Description:: MOSFET N-CH 60V 80A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW80NE06-10 from STMicroelectronics is an N-channel 60 V, 80 A, 8.5 mΩ TO-247 Power MOSFET optimized for high-current DC-DC converters and automotive solenoid drivers. It features 100% avalanche tested ruggedness, 7 V/ns dv/dt capability, and 350 mJ single-pulse avalanche energy at 50 V.

For engineers reviewing the STW80NE06-10 datasheet, STW80NE06-10 pinout, STW80NE06-10 application, or STW80NE06-10 equivalent, key selection criteria include R_DS(on) ≤ 8.5 mΩ at 10 V_GS, T_j(max) = 175 °C, TO-247 thermal resistance (R_thj-case = 0.6 °C/W), and unclamped inductive switching robustness.

Technical Context

This MOSFET employs ST's "Single Feature Size™" strip-based process to achieve high cell density and low on-resistance while maintaining tight manufacturing reproducibility. Its internal structure supports high di/dt (≤300 A/µs) and exceptional dv/dt immunity (7 V/ns), critical for fast-switching inductive loads.

The device integrates a robust body diode with t_rr = 100 ns and Q_rr = 0.4 nC at T_j = 150 °C, enabling efficient freewheeling in motor control and relay drive applications without external diodes in many cases.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum drain-source blocking voltage; defines safe operation in 48 V automotive and industrial bus systems.
R_DS(on)	8.5 mΩ max at V_GS = 10 V, I_D = 40 A - Enables <1 W conduction loss at 80 A, reducing heatsink requirements.
I_D (cont.)	80 A at T_C = 25 °C - Sustains full rated current with adequate heatsinking; derates to 57 A at 100 °C case temperature.
E_AS	350 mJ - Single-pulse avalanche energy rating ensures reliable operation during inductive turn-off transients.
Q_g	140–189 nC - Total gate charge determines driver strength needed; compatible with standard 1–2 A gate drivers.
t_r/t_f	150 ns / 75 ns - Fast switching transitions minimize switching losses in 100–500 kHz DC-DC and motor PWM designs.
R_thj-case	0.6 °C/W - Low junction-to-case thermal resistance enables high power dissipation with minimal temperature rise across copper mounting surface.

Pinout & Package

TO-247 package with isolated tab (drain-connected). Standard 3-pin configuration: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level gate drive; threshold voltage 2–4 V ensures TTL/CMOS compatibility with margin.
Pin 2 (Drain)	High-side power node	Internally connected to metal tab; requires insulated mounting when referenced to non-ground potentials.
Pin 3 (Source)	Power return / reference	Serves as local ground reference for gate drive; must be low-inductance path to minimize ringing.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness under unclamped inductive switching-no screening failures in production motor or solenoid drives.
7 V/ns dv/dt immunity	Prevents false turn-on during high-slew-rate noise events in automotive 12 V/48 V systems.
Low Q_gd/Q_g ratio (≈0.26)	Improves Miller immunity and enables stable hard-switching up to 500 kHz without snubbers.
TO-247 with R_thj-case = 0.6 °C/W	Supports >200 W continuous dissipation with standard heatsink interface, eliminating need for expensive thermal interface materials.
Body diode t_rr = 100 ns	Enables synchronous rectification replacement in medium-frequency flyback and half-bridge topologies.

Applications

DC-DC Converters

Automotive Solenoid Drivers

Use Scenario: 48 V–12 V buck converter in mild-hybrid vehicle power distribution units.

IC Role / Device Role / Timing Role: Primary high-side switch operating at 200 kHz with 80 A peak load current.

Use Value: 8.5 mΩ R_DS(on) limits conduction loss to <0.54 W at 80 A, enabling compact heatsink design.

Use Scenario: Engine start-stop solenoid actuation in 12 V battery systems.

IC Role / Device Role / Timing Role: High-current pulsed switch delivering 80 A for 50 ms with 300 A/µs di/dt.

Use Value: 350 mJ E_AS withstands repeated inductive kickback without degradation.

Motor Control (BLDC)

Audio Amplifier Output Stage

Use Scenario: 3-phase inverter for 5 kW electric power steering motor.

IC Role / Device Role / Timing Role: Low-side switch in 60 kHz PWM bridge with 75 A RMS phase current.

Use Value: 7 V/ns dv/dt rating prevents spurious turn-on during cross-conduction transitions.

Use Scenario: Class-D amplifier output stage driving 4 Ω speakers at 300 W.

IC Role / Device Role / Timing Role: High-efficiency output switch with fast t_r/t_f minimizing dead-time distortion.

Use Value: 150 ns rise time and 75 ns fall time reduce switching artifacts in audio band.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFP4668PbF	R_DS(on) = 7.2 mΩ (lower), Q_g = 220 nC (higher), TO-247 package	Higher gate drive power required; better conduction efficiency at <60 A	Prefer when minimizing conduction loss dominates over gate drive complexity.
IXFH80N60X3	R_DS(on) = 9.5 mΩ (higher), Q_g = 115 nC (lower), 650 V rating	Over-specified voltage rating adds cost; lower gate charge eases driver design	Choose only if system requires 650 V breakdown margin or tighter gate drive budget.

Compared with IRFP4668PbF and IXFH80N60X3, the STW80NE06-10 delivers optimal balance of low R_DS(on), moderate Q_g, and proven 60 V avalanche ruggedness-making it preferred for cost-sensitive 48 V automotive and industrial switching where reliability under transient stress is critical.

Availability

STW80NE06-10 is available at Aetrix Electronics and suitable for DC-DC converters, automotive solenoid drivers, and BLDC motor inverters requiring stable component supply and long-term industrial availability.

Supply support for STW80NE06-10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

The STripFET™ power MOSFET product line targets high-efficiency, high-reliability switching in automotive and industrial power conversion-emphasizing avalanche ruggedness, low R_DS(on), and thermal performance.

FAQ

Is STW80NE06-10 suitable for 48 V automotive battery systems?

Yes. With V_DSS = 60 V, 100% avalanche testing, and operation up to T_j = 175 °C, it meets ISO 7637-2 surge and load-dump requirements when properly heatsinked. Its 7 V/ns dv/dt immunity prevents false triggering during noisy engine cranking events.

What is the maximum continuous drain current at 100 °C case temperature?

The datasheet specifies I_D = 57 A at T_C = 100 °C. This reflects thermal derating from the 80 A rating at 25 °C, based on R_thj-case = 0.6 °C/W and T_j(max) = 175 °C. Operation above this requires forced cooling or pulse-width limitation.

Does STW80NE06-10 have a built-in body diode, and what are its recovery characteristics?

Yes-it integrates a fast, soft-recovery body diode with t_rr = 100 ns and Q_rr = 0.4 nC at T_j = 150 °C, measured under 80 A, 100 A/µs di/dt, and 50 V V_DD. These values enable use in freewheeling paths without external diodes in many 200–500 kHz topologies.

Can STW80NE06-10 replace older STW80NE06 devices?

Yes-the "-10" suffix denotes the same electrical and mechanical specifications as the original STW80NE06, with identical R_DS(on), avalanche rating, and TO-247 footprint. No layout or driver changes are required for drop-in replacement in existing designs.

STW80NE06-10 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: STripFET™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 40A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 189 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW80NE06-10 FAQ

1.How can I place an order for STW80NE06-10 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW80NE06-10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW80NE06-10 reliable?

The price and inventory of STW80NE06-10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW80NE06-10 is usually 5 days.

3.What payment methods are accepted for STW80NE06-10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW80NE06-10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW80NE06-10?

STW80NE06-10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW80NE06-10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW80NE06-10?

For technical support, including STW80NE06-10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW80NE06-10 requirements.

6.How does Aetrix verify that STW80NE06-10 is sourced from the original manufacturer or authorized distributors?

All STW80NE06-10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW80NE06-10 meets industry standards.

7.What is the process for return or replacement of STW80NE06-10?

All STW80NE06-10 units undergo pre-shipment inspection (PSI). If there is an issue with STW80NE06-10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW80NE06-10 part is unused and in its original packaging.

Return procedure for STW80NE06-10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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