STMicroelectronics STW80NF06

Overview

STW80NF06 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-247 package, rated for 60 V drain-source voltage, 80 A continuous drain current at T_C = 25°C, and 0.0065 Ω typical R_DS(on) at V_GS = 10 V. It features 100% avalanche tested ruggedness, low gate threshold (2–4 V), and high packing density via STripFET II™ process-used in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the STW80NF06 datasheet, STW80NF06 pinout, STW80NF06 application, or STW80NF06 equivalent, key selection criteria include its 300 W total dissipation at T_C = 25°C, 0.5 °C/W junction-to-case thermal resistance, 115–150 nC total gate charge, and suitability for hard-switched industrial power stages requiring robust unclamped inductive switching capability.

Technical Context

This MOSFET employs ST's Single Feature Size™ strip-based process to achieve high cell density and low on-resistance while maintaining stable threshold voltage over temperature. Its 870 mJ single-pulse avalanche energy rating and 320 A pulsed drain current support reliable operation under transient overload and inductive turn-off stress.

The device exhibits 3850 pF input capacitance and 250 pF reverse transfer capacitance at V_DS = 25 V, enabling predictable switching behavior with external gate resistors. Its source-drain diode has 1.5 V forward voltage at 80 A and 80 ns reverse recovery time under specified di/dt conditions, critical for synchronous rectification and freewheeling paths.

Key Specifications

Pinout & Package

STW80NF06 uses TO-247 package: three-terminal through-hole metal-can housing with isolated tab (drain-connected). Mounting hole enables mechanical fixation and thermal coupling to heatsink. Tab is electrically connected to drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Compared with IRFP4668PbF and IXFH80N60X3, STW80NF06 offers superior avalanche ruggedness (870 mJ) and tighter R_DS(on) distribution, making it optimal for industrial drives where reliability under overload outweighs marginal conduction loss savings.

Availability

STW80NF06 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing for safety-critical designs.

Supply support for STW80NF06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STW80NF06 belongs to ST's STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability industrial power conversion where ruggedness, thermal performance, and parametric consistency are prioritized over ultra-low gate charge.

FAQ

Is STW80NF06 suitable for surface-mount assembly?

No. STW80NF06 uses TO-247 through-hole package with isolated metal tab and is designed for screw-mount heatsink attachment. It lacks solder pads or land patterns for reflow soldering and requires mechanical fastening and thermal interface material for thermal management.

What is the maximum safe operating temperature for continuous operation?

The maximum operating junction temperature is 175°C. For continuous operation at 80 A, case temperature must be maintained ≤100°C per derating curve, requiring heatsink thermal resistance ≤0.42 °C/W (including interface) when ambient is 50°C and R_thj-case = 0.5 °C/W.

Does STW80NF06 require a gate resistor for protection?

Yes. A series gate resistor (typically 4.7–10 Ω) is required to dampen ringing, limit peak gate current, and control dV/dt during switching. The datasheet specifies 4.7 Ω for switching time measurements and recommends RC snubbers for inductive loads exceeding 27 V.

Can STW80NF06 replace STP80NF06 in existing designs?

Yes, with identical electrical specs and pinout, but STW80NF06 uses TO-247 while STP80NF06 uses TO-220. Mechanical redesign is required for heatsink mounting and PCB footprint; thermal performance improves due to lower R_thj-case (0.5 vs. 0.75 °C/W), allowing higher power density.