My Inquiry
My Account
STMicroelectronics STW80NF55-08
- Part No.:
- STW80NF55-08
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
STW80NF55-08.pdf
- Description:
- MOSFET N-CH 55V 80A TO247-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,630
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
STW80NF55-08 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-247 package, rated for 55 V drain-source voltage, 80 A continuous drain current at TC = 25 °C, and 0.0065 Ω typical RDS(on) at VGS = 10 V. It delivers high-current switching in motor drives, DC-DC converters, and industrial power supplies with rugged avalanche capability (EAS = 1000 mJ).
For engineers reviewing the STW80NF55-08 datasheet, STW80NF55-08 pinout, STW80NF55-08 application, or STW80NF55-08 equivalent, key selection criteria include its low on-resistance, 320 A pulsed drain current rating, 300 W total dissipation, TO-247 thermal resistance (Rthj-case = 0.5 °C/W), and gate threshold voltage range (2–4 V) for standard logic-level drive compatibility.
Technical Context
This STripFET™ II device uses a single-feature-size strip-based process to achieve high cell density and low RDS(on), enabling efficient conduction with minimal thermal stress. Its avalanche-rated design supports unclamped inductive switching without external snubbers.
The MOSFET exhibits fast switching performance: td(on) = 20 ns, tr = 110 ns, td(off) = 75 ns, and tf = 35 ns under VDD = 27 V, ID = 40 A, RG = 4.7 Ω conditions. Gate charge parameters (Qg = 112 nC, Qgd = 40 nC) indicate moderate drive strength requirements for high-frequency operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum blocking voltage before avalanche onset; suitable for 48 V bus systems with margin. |
| RDS(on) max | 0.008 Ω - Ensures ≤6.4 W conduction loss at 80 A, critical for thermal management in high-current designs. |
| ID continuous | 80 A at TC = 25 °C - Sustains full load in heatsink-mounted industrial power stages. |
| EAS | 1000 mJ - Enables reliable energy absorption during inductive turn-off transients without failure. |
| Qg | 112 nC - Determines gate driver current requirement (~11 mA average at 100 kHz, 10 V swing). |
| Rthj-case | 0.5 °C/W - Allows junction temperature rise of only 150 °C at 300 W dissipation, supporting robust thermal design. |
| VGS(th) | 2–4 V - Compatible with 3.3 V and 5 V microcontroller outputs without level-shifting. |
Pinout & Package
STW80NF55-08 is housed in a TO-247 package with three leads: Gate (G), Drain (D), and Source (S). The metal tab is electrically connected to the Drain terminal and serves as the primary heat transfer path to the heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (left) | Gate (G) | Control input; requires low-impedance drive due to 112 nC total gate charge. |
| Lead 2 (center) | Drain (D) | Main power output node; electrically tied to metal tab for thermal and electrical connection to heatsink. |
| Lead 3 (right) | Source (S) | Power return path; referenced to control ground; carries full load current (80 A). |
Key Features
| Feature | Design Value |
|---|---|
| STripFET™ II process | Enables 0.0065 Ω RDS(on) in TO-247, reducing conduction losses by >25% vs. prior-generation 55 V MOSFETs. |
| Rugged avalanche rating | Guarantees 1000 mJ single-pulse energy handling without degradation, eliminating need for external clamping in motor control H-bridges. |
| Standard threshold drive | VGS(th) range (2–4 V) ensures reliable turn-on with 3.3 V/5 V logic, avoiding marginal biasing in noisy industrial environments. |
| Low gate charge asymmetry | Qgd/Qg = 36% minimizes Miller-induced switching delay, improving efficiency in hard-switched SMPS above 50 kHz. |
Applications
| Motor Drive Inverter Stage | High-Current DC-DC Converter Primary Switch |
|---|---|
Use Scenario: Half-bridge or three-phase inverter driving 1–5 kW BLDC or induction motors in HVAC compressors and industrial pumps. IC Role / Device Role / Timing Role: High-side/low-side power switch handling 80 A peak phase current with 20–75 ns switching transitions. Use Value: Low RDS(on) and 1000 mJ EAS enable compact heatsink design and eliminate external avalanche protection components. |
Use Scenario: Primary-side synchronous rectifier or main switch in isolated 48 V input, 12 V/24 V output telecom or server DC-DC modules. IC Role / Device Role / Timing Role: Fast-turning power switch operating at 100–300 kHz with 320 A pulsed current capability during transient loads. Use Value: 0.5 °C/W Rthj-case and 300 W PTOT support high-power density (>500 W/in³) without forced air cooling. |
| Industrial UPS Output Stage | High-Power LED Driver Switch |
Use Scenario: Bidirectional power flow control in online double-conversion UPS systems delivering up to 3 kVA output. IC Role / Device Role / Timing Role: Output stage MOSFET conducting 80 A continuously while supporting reverse current during battery charging cycles. Use Value: Source-drain diode VSD = 1.5 V at 80 A enables efficient freewheeling without external Schottky, reducing BOM count. |
Use Scenario: Constant-current switching regulator for high-bay LED luminaires drawing 60–80 A from 48 V distributed supply rails. IC Role / Device Role / Timing Role: PWM-controlled power switch modulating current through high-power LED strings at 1–20 kHz. Use Value: Tight RDS(on) tolerance (0.0065–0.008 Ω) ensures consistent current regulation across production units without per-unit calibration. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel 55 V power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFP4110PBF | RDS(on) = 0.0058 Ω (lower), but VGS(th) = 2–4 V same; Qg = 130 nC (higher); TO-247 package. | Higher gate charge increases driver loss; better conduction efficiency at <60 A, but less margin at 80 A due to lower SOA rating. | Prefer when minimizing conduction loss dominates over switching loss and SOA robustness is secondary. |
| IXTH80N50L2 | RDS(on) = 0.0075 Ω; VDS = 50 V (lower); EAS = 720 mJ (lower); TO-247 package. | Not rated for 55 V systems; reduced avalanche energy limits use in unclamped inductive loads like motor phases. | Select only for 48 V nominal systems where 50 V rating suffices and avalanche stress is mitigated by circuit design. |
Compared with IRFP4110PBF and IXTH80N50L2, STW80NF55-08 offers superior balance of 55 V rating, 1000 mJ avalanche immunity, and 0.0065 Ω RDS(on), making it optimal for industrial motor drives and UPS where reliability under transient overload is non-negotiable.
Availability
STW80NF55-08 is available at Aetrix Electronics and suitable for motor drive inverters, high-current DC-DC converters, and industrial UPS output stages requiring stable component supply and long-term manufacturability.
Supply support for STW80NF55-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs for automotive, industrial, and power applications.
STW80NF55-08 belongs to ST's STripFET™ II power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial motor control, uninterruptible power supplies, and DC-DC conversion.
FAQ
What is the maximum safe operating temperature for STW80NF55-08?
The STW80NF55-08 has a maximum junction temperature (Tj) of 175 °C and a storage temperature range of –55 to 175 °C. Thermal design must ensure that under worst-case ambient and power dissipation conditions, the junction temperature remains below 175 °C-achievable via proper heatsinking given its 0.5 °C/W Rthj-case.
Can STW80NF55-08 be driven directly by a 3.3 V microcontroller GPIO?
Yes-the device's gate threshold voltage (VGS(th)) ranges from 2 to 4 V, and its RDS(on) is fully specified at VGS = 10 V. While 3.3 V may not achieve minimum RDS(on), it provides sufficient turn-on for many low-duty-cycle or low-current applications; for full 80 A capability, a dedicated gate driver is recommended.
Does STW80NF55-08 include an integrated body diode, and what are its characteristics?
Yes-it features an inherent source-drain body diode with forward voltage VSD = 1.5 V at ISD = 80 A and reverse recovery charge Qrr = 230 nC. This diode supports freewheeling in bridge configurations but is not optimized for high-frequency synchronous rectification due to its relatively high Qrr.
How does the TO-247 package of STW80NF55-08 compare thermally to TO-220 and D²PAK variants?
STW80NF55-08 in TO-247 achieves Rthj-case = 0.5 °C/W-identical to STP80NF55-08 (TO-220) and STB80NF55-08T4 (D²PAK)-but offers superior mechanical rigidity and higher creepage/clearance for 55 V isolation. Its larger tab area improves heatsink contact reliability in high-vibration environments.
STW80NF55-08 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- STripFET™
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 150 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3850 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247-3
STW80NF55-08 FAQ
1.How can I place an order for STW80NF55-08 through Aetrix?
Please submit a Request for Quotation (RFQ) for STW80NF55-08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STW80NF55-08 reliable?
The price and inventory of STW80NF55-08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW80NF55-08 is usually 5 days.
3.What payment methods are accepted for STW80NF55-08?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW80NF55-08 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STW80NF55-08?
STW80NF55-08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STW80NF55-08 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STW80NF55-08?
For technical support, including STW80NF55-08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW80NF55-08 requirements.
6.How does Aetrix verify that STW80NF55-08 is sourced from the original manufacturer or authorized distributors?
All STW80NF55-08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW80NF55-08 meets industry standards.
7.What is the process for return or replacement of STW80NF55-08?
All STW80NF55-08 units undergo pre-shipment inspection (PSI). If there is an issue with STW80NF55-08, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STW80NF55-08 part is unused and in its original packaging.
Return procedure for STW80NF55-08:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
STW80NF55-08 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
