STMicroelectronics STW8NB100

Overview

STW8NB100 from STMicroelectronics is an N-channel 1000 V, 7.3 A PowerMesh™ MOSFET in TO-247 package with R_DS(on) = 1.3 Ω (typ), ±30 V gate rating, and 100% avalanche tested for ruggedness. It serves as a high-voltage switching device in primary-side SMPS, welding inverters, and UPS DC-AC stages where fast dv/dt immunity and low gate charge are critical.

For engineers reviewing the STW8NB100 datasheet, STW8NB100 pinout, STW8NB100 application, or STW8NB100 equivalent, key selection criteria include its 1000 V breakdown voltage, 1.3 Ω on-resistance at 10 V gate drive, 68–95 nC total gate charge, 3.5 V/ns dv/dt capability, and TO-247 thermal performance (R_thj-case = 0.66 °C/W).

Technical Context

This MOSFET employs ST's proprietary Mesh Overlay™ process and patented strip layout with edge termination to achieve lowest R_DS(on) per die area and exceptional unclamped inductive switching robustness. Its intrinsic capacitances-C_iss = 2900 pF, C_oss = 275 pF, C_rss = 27 pF-enable high-frequency hard-switching while minimizing Miller effect.

The device features a fully rated source-drain diode with V_SD = 1.6 V at 7.3 A and trr = 1000 ns under harsh recovery conditions (di/dt = 100 A/µs, T_j = 150 °C). Its 700 mJ single-pulse avalanche energy (E_AS) and 7.3 A repetitive avalanche current support reliable operation in flyback and resonant topologies without external snubbers.

Key Specifications

Pinout & Package

TO-247 package: isolated tab (drain), 3-pin through-hole configuration with standard lead spacing and 3.55–3.65 mm mounting hole diameter. Thermal path optimized via copper tab soldered directly to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW9NB100 and IXTH8N100D2, the STW8NB100 delivers the lowest R_DS(on) and gate charge in its voltage class, enabling higher efficiency in 50–100 kHz SMPS and better dv/dt immunity in noisy welding environments.

Availability

STW8NB100 is available at Aetrix Electronics and suitable for industrial SMPS, welding inverters, and UPS DC-AC inverters requiring stable component supply across extended production lifecycles.

Supply support for STW8NB100 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.

The PowerMesh™ MOSFET product line targets high-reliability, high-efficiency power conversion systems demanding ruggedness, low switching loss, and long-term parametric stability under thermal cycling.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The STW8NB100 supports 4.18 A continuous drain current at T_C = 100 °C, derived from its 7.3 A rating at 25 °C and thermal derating factor of 1.52 W/°C. This value reflects safe operation within SOA limits when heatsink temperature remains ≤100 °C and ambient conditions permit adequate convection or forced cooling.

Does the STW8NB100 require a negative gate voltage for reliable turn-off?

No. The device operates reliably with 0 V to +10 V gate drive; however, applying –5 V to –10 V during turn-off improves noise immunity in high-dv/dt environments by widening the margin below V_GS(th) (3–5 V). Its ±30 V V_GS rating supports such bias without gate oxide stress.

Can the STW8NB100 replace IGBTs in 1000 V welding inverters?

Yes - its 1000 V V_DSS, 29.2 A pulsed current, and 3.5 V/ns dv/dt rating match IGBT requirements in hard-switched welding inverters. Unlike IGBTs, it avoids tail current and offers faster switching, though gate drive strength must accommodate 95 nC Q_g at full slew rate.

Is the source-drain diode suitable for synchronous rectification?

No. The body diode has trr = 1000 ns and Q_rr = 10.8 µC - too slow and lossy for synchronous rectification above 50 kHz. It is intended for freewheeling and clamping only; external Schottky or SiC diodes are recommended for high-frequency recovery paths.