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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW8NK80Z

Name: STW8NK80Z
Brand: STMicroelectronics
SKU: STW8NK80Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW8NK80Z

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW8NK80Z.pdf

Description:: MOSFET N-CH 800V 6.2A TO247-3

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Product details

Overview

STW8NK80Z from STMicroelectronics is a Zener-protected N-channel 800 V, 1.3 Ω typ. SuperMESH Power MOSFET in TO-247 package, rated for 6.2 A continuous drain current at 25 °C and 24.8 A pulsed, with 4.5 V/ns dv/dt capability and 100% avalanche tested. It serves as a high-voltage switching device in offline SMPS, AC-DC adapters, and industrial motor drives.

For engineers reviewing the STW8NK80Z datasheet, STW8NK80Z pinout, STW8NK80Z application, or STW8NK80Z equivalent, this page delivers verified electrical ratings, thermal data, gate charge behavior (46 nC total), avalanche energy (300 mJ), and package-specific safe operating area curves - all critical for hard-switching and unclamped inductive load designs.

Technical Context

This MOSFET employs ST's SuperMESH process to reduce R_DS(on) while maintaining high dv/dt immunity (4.5 V/ns) and robust avalanche ruggedness (6.2 A repetitive I_AR, 300 mJ E_AS). Its Zener-protected gate ensures ±30 V V_GS tolerance and 4 kV HBM ESD rating.

The device features low intrinsic capacitance (C_iss = 1320 pF, C_oss = 143 pF, C_rss = 27 pF) and optimized gate charge profile (Q_gd = 25 nC, Q_gs = 8.5 nC), enabling fast switching (t_d(off) = 48 ns, t_f = 28 ns) with minimal Miller-induced oscillation risk in high-frequency converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - supports primary-side switching in universal-input 85–265 VAC offline converters without derating.
R_DS(on) max	1.5 Ω - limits conduction loss to ≤5.8 W at 6.2 A DC, enabling thermally constrained TO-247 mounting.
I_D (cont, T_C=25°C)	6.2 A - defines maximum continuous current under heatsink-cooled conditions.
E_AS	300 mJ - enables reliable operation under unclamped inductive switching (e.g., relay driving, solenoid control).
dv/dt rating	4.5 V/ns - prevents spurious turn-on during fast voltage transients in high-noise industrial environments.
Q_g	46 nC - determines gate driver power requirement and switching loss trade-off in 50–100 kHz SMPS designs.
T_J range	−55 to +150 °C - qualifies for extended-temperature industrial and outdoor power equipment.

Pinout & Package

STW8NK80Z uses the TO-247 package: isolated tab (Drain), center lead (Gate), right lead (Source). The metal tab is electrically connected to Drain and serves as primary heat path; isolation voltage from tab to leads is 2.5 kV RMS.

Pin/Terminal	Circuit Role	Design Meaning
Tab (large metal surface)	Drain (D)	Primary thermal interface and high-voltage power node; requires insulated mounting hardware for floating applications.
Lead 1 (left)	Gate (G)	Low-impedance control input; sensitive to ESD (4 kV HBM); requires <10 Ω series resistance near driver.
Lead 2 (center)	Source (S)	Power return path and reference for gate drive; connects directly to PCB ground plane for low-inductance layout.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 300 mJ and repetitive stress up to 6.2 A without parameter shift.
Minimized gate charge	46 nC total charge enables efficient 65–100 kHz operation with standard 1-A peak gate drivers.
Zener-protected gate	Integrated gate-source Zener clamps transient overvoltage to ±30 V, eliminating external TVS in most layouts.
Very low intrinsic capacitance	C_rss/C_iss ratio of 0.020 reduces Miller effect, improving noise immunity and reducing gate drive losses.

Applications

Offline AC-DC Adapters

Industrial Motor Drives

Use Scenario: 65 W universal-input flyback converter powering IoT gateways in factory settings.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 800 V blocking and 6.2 A peak current during 65 kHz PWM cycles.

Use Value: 1.3 Ω R_DS(on) limits conduction loss to <6 W at full load, enabling compact heatsink design in sealed enclosures.

Use Scenario: Half-bridge leg in 3-phase inverter for 0.75 kW HVAC blower motor.

IC Role / Device Role / Timing Role: High-side switching element enduring 400 V DC bus and 24.8 A pulsed currents during PWM commutation.

Use Value: 4.5 V/ns dv/dt rating prevents false triggering from bus ringing, eliminating need for snubbers in cost-sensitive designs.

LED Streetlight Drivers

Uninterruptible Power Supplies

Use Scenario: Two-transistor forward converter delivering constant current to 100 W LED arrays.

IC Role / Device Role / Timing Role: Main switch sustaining 800 V during output rectifier recovery and absorbing inductive kickback.

Use Value: 300 mJ single-pulse avalanche energy tolerates worst-case output short-circuit events without failure.

Use Scenario: Boost PFC stage in 1 kVA online UPS handling generator-sourced distorted input.

IC Role / Device Role / Timing Role: Critical switching device managing 800 V hold-up and 6.2 A continuous conduction mode current.

Use Value: −55 to +150 °C junction range supports operation in battery rooms with ambient temperatures up to 60 °C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP8NK80ZFP	Same die, TO-220FP package; R_thJC = 4.2 °C/W vs. TO-247's 0.89 °C/W; lower power dissipation limit (140 W vs. 30 W absolute max).	Preferred for space-constrained but thermally relaxed designs where heatsink area is limited and peak power <100 W.	Select when board real estate is critical and thermal management uses forced air or large copper pours instead of bolted heatsinks.
IPP60R190C7	650 V rating, 190 mΩ R_DS(on), CoolMOS™ C7 technology; lower gate charge (34 nC) but no built-in Zener protection or avalanche testing.	Suitable for 400 V DC bus systems (e.g., server PSUs) where efficiency >85% is prioritized over 800 V margin and ruggedness.	Choose only if system voltage never exceeds 650 V and external gate protection + avalanche derating are implemented.

Compared with STP8NK80ZFP, STW8NK80Z offers superior thermal performance (0.89 vs. 4.2 °C/W R_thJC) for high-power density designs, while IPP60R190C7 trades voltage headroom and ruggedness for lower conduction loss in sub-650 V applications - making STW8NK80Z the sole choice for 800 V industrial SMPS requiring guaranteed avalanche survival.

Availability

STW8NK80Z is available at Aetrix Electronics and suitable for offline AC-DC adapters, industrial motor drives, and LED streetlight drivers requiring stable component supply across multi-year production cycles.

Supply support for STW8NK80Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's SuperMESH Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600–1000 V industrial power conversion systems where avalanche ruggedness and dv/dt immunity are non-negotiable.

FAQ

What is the maximum safe operating temperature for STW8NK80Z?

The junction temperature must not exceed +150 °C under any operating condition. With a TO-247 R_thJC of 0.89 °C/W, sustained 6.2 A conduction at 1.3 Ω requires heatsink-to-ambient thermal resistance ≤1.2 °C/W to maintain T_J < 125 °C at 70 °C ambient - verified via SOA curves in DS3070 Figure 5.

Does STW8NK80Z require external gate protection?

No external gate Zener is required: the integrated gate-body Zener clamps V_GS to ±30 V, and the device passes 4 kV HBM ESD testing. However, a 10 Ω gate resistor and local 100 nF ceramic capacitor between G-S remain mandatory to suppress ringing and ensure clean turn-on/turn-off.

How does STW8NK80Z perform in unclamped inductive switching?

It is fully characterized for UIS: 300 mJ single-pulse avalanche energy at T_J = 25 °C (E_AS), with 6.2 A repetitive avalanche current rating. Test circuit details and waveform validation are provided in DS3070 Figure 20 and Figure 21, confirming robustness in relay/solenoid drive and transformer reset applications.

Can STW8NK80Z replace STP8NK80ZFP in existing designs?

Yes, with mechanical and thermal redesign: both share identical die and electrical specs, but STW8NK80Z uses TO-247 (higher power, bolted heatsink) versus TO-220FP (lower power, PCB-mounted). Pinout differs (TO-247: Tab-D, Lead1-G, Lead2-S; TO-220FP: Lead1-D, Lead2-G, Lead3-S), requiring PCB layout change and updated thermal interface.

STW8NK80Z Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: SuperMESH™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 6.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.5Ohm @ 3.1A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1320 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW8NK80Z FAQ

1.How can I place an order for STW8NK80Z through Aetrix?

Please submit a Request for Quotation (RFQ) for STW8NK80Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW8NK80Z reliable?

The price and inventory of STW8NK80Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW8NK80Z is usually 5 days.

3.What payment methods are accepted for STW8NK80Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW8NK80Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW8NK80Z?

STW8NK80Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW8NK80Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW8NK80Z?

For technical support, including STW8NK80Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW8NK80Z requirements.

6.How does Aetrix verify that STW8NK80Z is sourced from the original manufacturer or authorized distributors?

All STW8NK80Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW8NK80Z meets industry standards.

7.What is the process for return or replacement of STW8NK80Z?

All STW8NK80Z units undergo pre-shipment inspection (PSI). If there is an issue with STW8NK80Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW8NK80Z part is unused and in its original packaging.

Return procedure for STW8NK80Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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