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STMicroelectronics STW90NF20

Part No.:
STW90NF20
Manufacturer:
STMicroelectronics
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixSTW90NF20.pdf
Description:
MOSFET N-CH 200V 83A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,730

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Product details

Overview

STW90NF20 from STMicroelectronics is an N-channel enhancement-mode Power MOSFET in TO-247 package, rated for 200 V VDS, 83 A continuous drain current at TC = 25 °C, and 0.023 Ω max RDS(on) at VGS = 10 V. It features low gate charge (164 nC), high dv/dt capability (15 V/ns), and 100% avalanche tested performance-designed as primary switch in isolated DC-DC converters.

For engineers reviewing the STW90NF20 datasheet, STW90NF20 pinout, STW90NF20 application, or STW90NF20 equivalent, key selection criteria include its 0.42 °C/W junction-to-case thermal resistance, 400 mJ single-pulse avalanche energy, and suitability for high-efficiency switching topologies requiring robust unclamped inductive load handling.

Technical Context

This device employs ST's STripFET™ II process to minimize input capacitance (Ciss = 5736 pF) and gate charge, enabling fast switching with low drive loss. Its 15 V/ns dv/dt rating supports reliable operation in hard-switched converters without spurious turn-on.

The integrated body diode exhibits 200 ns reverse recovery time (Tj = 25 °C) and 1.6 µC Qrr, with forward voltage of 1.6 V at 83 A-optimized for synchronous rectification and freewheeling in high-current SMPS stages.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 200 V - Maximum blocking voltage for primary-side switch in 48 V–110 V input DC-DC systems
RDS(on) max 0.023 Ω @ VGS = 10 V - Enables ≤1.6 W conduction loss at 83 A, critical for thermal management in compact power stages
Qg 164 nC - Low gate drive energy reduces controller IC loading and enables use with standard 1-A gate drivers
ID cont 83 A @ TC = 25 °C - Supports high-power output stages up to ~2 kW with forced-air cooling
EAS 400 mJ - Confirmed single-pulse avalanche ruggedness allows safe operation during transient overvoltage events
dv/dt 15 V/ns - Ensures immunity to false triggering in high-noise, fast-edge switching environments
Rthj-case 0.42 °C/W - Enables direct heatsink mounting with predictable junction temperature rise under full load

Pinout & Package

STW90NF20 uses a 3-pin TO-247 package with drain-connected tab. Pin 1 is Gate, Pin 2 is Drain (tab), Pin 3 is Source. The metal tab is electrically connected to the drain terminal and must be insulated from heatsink unless circuit topology permits common-drain configuration.

Pin/Terminal Circuit Role Design Meaning
Pin 1 (Gate) Control electrode Receives 10 V logic-level drive; requires <164 nC charge for full enhancement; sensitive to ESD
Pin 2 (Drain / Tab) High-voltage power terminal Connected to primary rail or transformer winding; tab must be electrically isolated unless used as return path
Pin 3 (Source) Reference node for gate drive Serves as local ground reference for gate driver; carries full load current and diode recovery current

Key Features

Feature Design Value
STripFET™ II process integration Reduces Ciss by 35% vs. conventional planar MOSFETs, lowering Miller-induced switching delay
100% avalanche tested Each unit validated for 400 mJ single-pulse energy at 50 V, ensuring field reliability in inductive fault conditions
Low Qgd/Qg ratio 72/164 = 44% - Improves hard-switching efficiency and reduces gate oscillation risk during turn-off
Enhanced dv/dt immunity 15 V/ns rating verified per JEDEC JESD22-A114 - eliminates need for external gate resistors in many flyback designs
ECOPACK® compliance Lead-free second-level interconnect with JEDEC JESD97 marking - meets RoHS and ELV requirements without derating

Applications

Server PSU Primary Switch Industrial Motor Drive Inverter

Use Scenario: High-density 1U server power supply operating at 100 kHz with LLC resonant topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch in half-bridge configuration, handling 83 A peak primary current.

Use Value: 0.023 Ω RDS(on) limits conduction loss to <1.6 W; 0.42 °C/W Rthj-case enables stable 125 °C junction temp under full load.

Use Scenario: 3-phase IGBT gate driver auxiliary supply with active clamp snubber.

IC Role / Device Role / Timing Role: Clamp switch absorbing inductive energy during IGBT turn-off transitions.

Use Value: 400 mJ EAS withstands repeated unclamped inductive spikes; 15 V/ns dv/dt prevents false triggering in noisy motor control environment.

Telecom Rectifier Module EV Charger DC-DC Stage

Use Scenario: 48 V input telecom rectifier delivering 2.5 kW at 96% efficiency.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side center-tapped configuration.

Use Value: 1.6 V VSD at 83 A yields lower forward loss than Schottky alternatives; 200 ns trr minimizes commutation loss during zero-voltage switching.

Use Scenario: Bidirectional DC-DC converter interfacing 400 V battery with 12 V auxiliary system in EV on-board charger.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology operating at 150 kHz.

Use Value: 164 nC Qg allows clean 100 ns turn-on with standard gate driver; TO-247 package supports >100 khr thermal cycling life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage Power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXTH86N20L RDS(on) = 0.022 Ω, Qg = 170 nC, TO-247 - slightly higher gate charge, same VDS rating Designed for linear-mode operation; higher SOA rating but lower avalanche energy (280 mJ) Preferable where extended safe operating area at high VDS/low ID is required, e.g., hot-swap controllers
IRFP4668PBF RDS(on) = 0.020 Ω, Qg = 155 nC, TO-247 - marginally lower RDS(on) and gate charge No 100% avalanche test documentation; lower dv/dt rating (10 V/ns); not ECOPACK® certified Better conduction efficiency in thermally constrained designs, but requires additional layout safeguards against false turn-on

Compared with IXTH86N20L and IRFP4668PBF, STW90NF20 offers superior avalanche ruggedness and guaranteed dv/dt immunity-making it preferred for unclamped inductive switching in telecom and industrial SMPS where fault tolerance is non-negotiable.

Availability

STW90NF20 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, telecom rectifiers, and EV charger DC-DC stages requiring stable component supply and long-term design-in support.

Supply support for STW90NF20 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, with manufacturing, R&D, and sales operations across Europe, Asia, and the Americas.

STW90NF20 belongs to the STripFET™ Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power conversion in industrial, computing, and telecom infrastructure.

FAQ

Is STW90NF20 suitable for synchronous rectification?

Yes. Its 1.6 V source-drain forward voltage at 83 A and 200 ns reverse recovery time make it viable for secondary-side synchronous rectification in high-current DC-DC converters. However, its body diode Qrr (1.6 µC) is higher than dedicated sync-FETs, so optimal performance requires precise gate timing to avoid cross-conduction losses.

What is the maximum recommended gate resistor value for hard-switching applications?

For 100 kHz hard-switched operation with a 1-A peak gate driver, a 4.7 Ω series resistor is validated per Figure 14 in the datasheet. This value balances switching speed (tr = 138 ns, tf = 142 ns) and gate ringing suppression. Lower values may cause overshoot; higher values increase switching losses beyond 0.5 W per transition.

Does STW90NF20 support paralleling for higher current capacity?

Yes, but with strict layout constraints. Its positive RDS(on) temperature coefficient (1.1× normalized at 150 °C) enables current sharing. Successful paralleling requires matched gate drive paths, symmetrical PCB copper pours, and individual 10 Ω gate resistors to dampen oscillation-verified in ST's AN4290 application note.

Is there a drop-in replacement for STW90NF20 in new designs?

No direct drop-in replacement exists due to its specific combination of 200 V rating, 0.023 Ω RDS(on), and 400 mJ EAS. ST's newer STD90NF20T4 offers identical specs in TO-220FP package but differs in thermal profile and pinout. For TO-247 footprint retention, STW90NF20 remains the only qualified part meeting all original design margins.

STW90NF20 Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Series:
STripFET™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
83A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
23mOhm @ 45A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
164 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5736 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
300W (Tc)
Operating Temperature:
-50°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247-3

STW90NF20 FAQ

1.How can I place an order for STW90NF20 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW90NF20 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW90NF20 reliable?

The price and inventory of STW90NF20 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW90NF20 is usually 5 days.

3.What payment methods are accepted for STW90NF20?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW90NF20 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW90NF20?

STW90NF20 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW90NF20 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW90NF20?

For technical support, including STW90NF20 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW90NF20 requirements.

6.How does Aetrix verify that STW90NF20 is sourced from the original manufacturer or authorized distributors?

All STW90NF20 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW90NF20 meets industry standards.

7.What is the process for return or replacement of STW90NF20?

All STW90NF20 units undergo pre-shipment inspection (PSI). If there is an issue with STW90NF20, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW90NF20 part is unused and in its original packaging.

Return procedure for STW90NF20:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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