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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STW9N80K5

Name: STW9N80K5
Brand: STMicroelectronics
SKU: STW9N80K5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STW9N80K5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STW9N80K5.pdf

Description:: MOSFET N-CHANNEL 800V 7A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STW9N80K5 from STMicroelectronics is an N-channel 800 V, 0.73 Ω typ. R_DS(on), 7 A MDmesh™ K5 Power MOSFET in TO-247 package, designed for high-voltage switching in offline SMPS and PFC stages. It features 12 nC total gate charge, 100% avalanche tested, and integrated Zener-protected gate-source diodes.

For engineers reviewing the STW9N80K5 datasheet, STW9N80K5 pinout, STW9N80K5 application, or STW9N80K5 equivalent, key selection criteria include R_DS(on) × area efficiency, dv/dt ruggedness (50 V/ns), unclamped inductive switching capability, and thermal resistance (1.14 °C/W junction-to-case).

Technical Context

This MOSFET employs ST's MDmesh™ K5 vertical superjunction architecture to achieve ultra-low specific on-resistance and minimized output charge (Q_gd = 6.7 nC). Its 800 V V_(BR)DSS rating supports universal-input AC-DC designs up to 400 V DC bus with margin.

The device integrates back-to-back gate-source Zener diodes (V_(BR)GSO = 30 V) for ESD robustness and eliminates external gate protection. Its 292 ns reverse recovery time (T_j = 25 °C) and 2.66 µC Q_rr support hard-switched and quasi-resonant topologies without snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	800 V - Supports 400 V DC bus with 100% safety margin in offline converters
R_DS(on) max	0.90 Ω - Enables low conduction loss at 7 A continuous drain current (T_C = 25 °C)
Q_g	12 nC - Reduces gate drive power and enables high-frequency operation up to 100 kHz
dv/dt ruggedness	50 V/ns - Ensures reliable operation during fast voltage transients in bridge configurations
E_AS	200 mJ - Withstands single-pulse unclamped inductive energy without failure
R_thj-case	1.14 °C/W - Allows 110 W dissipation at T_C = 25 °C with minimal heatsink requirement
trr	292 ns - Minimizes switching losses and EMI in hard-switched PFC and LLC circuits

Pinout & Package

STW9N80K5 is housed in a TO-247 package with three terminals: Drain (Tab), Source (Pin 1), and Gate (Pin 2). The metal tab is electrically connected to the Drain, enabling direct heatsinking with isolation if required.

Pin/Terminal	Circuit Role	Design Meaning
Tab (large metal surface)	Drain	Primary high-voltage power path; thermally coupled to heatsink; requires electrical isolation when mounted to chassis
Pin 1	Source	Reference node for gate drive and current sensing; connects to power ground or low-side switch node
Pin 2	Gate	Control input with ±30 V rating; Zener-protected to withstand transient overvoltage without external clamping

Key Features

Feature	Design Value
MDmesh™ K5 technology	Reduces R_DS(on) × area by >30% vs prior-generation 800 V superjunction MOSFETs
Ultra-low Q_gd/Q_g ratio	6.7 nC / 12 nC = 0.56 - Improves Miller immunity and reduces turn-off delay in high-dV/dt environments
Zener-protected gate	Integrated 30 V bidirectional gate-source clamp - eliminates need for external TVS in most industrial designs
100% avalanche rated	Guaranteed single-pulse E_AS = 200 mJ - Enables robust operation in unclamped inductive switching (e.g., relay drivers, motor phase control)

Applications

Industrial Switch-Mode Power Supplies

Server & Telecom Rectifiers

Use Scenario: 3 kW active PFC front-end operating at 65 kHz with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: High-side switching element in boost topology; handles 7 A RMS input current at peak line.

Use Value: 0.73 Ω R_DS(on) limits conduction loss to <1.8 W at full load, reducing heatsink size by 35% vs legacy 800 V MOSFETs.

Use Scenario: Secondary-side synchronous rectification in 48 V telecom DC-DC brick with 92% efficiency target.

IC Role / Device Role / Timing Role: Low-side freewheeling switch in phase-shifted full-bridge; conducts 28 A pulsed current during dead-time.

Use Value: 292 ns trr and 2.66 µC Q_rr minimize reverse recovery loss and associated EMI, enabling clean zero-voltage switching transitions.

UPS Inverter Stages

EV Charger Power Factor Correction

Use Scenario: Half-bridge inverter stage in 5 kVA online UPS delivering pure sine-wave output.

IC Role / Device Role / Timing Role: High-voltage leg switch handling 800 V DC link; subjected to repetitive unclamped inductive stress during fault conditions.

Use Value: 200 mJ E_AS rating ensures survival of worst-case short-circuit events without derating or parallel devices.

Use Scenario: 11 kW OBC (on-board charger) with dual-phase interleaved PFC operating at 100 kHz.

IC Role / Device Role / Timing Role: Primary switching device in each PFC leg; driven by isolated gate driver with 4.7 Ω series resistance.

Use Value: 12 nC Q_g allows efficient driving with low-power gate drivers (e.g., STGAP2S), cutting auxiliary supply consumption by 40%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP9N80C3	R_DS(on) = 0.85 Ω max, Q_g = 14.5 nC, TO-220FP package	Limited to 90 W dissipation; higher thermal resistance (1.5 °C/W) restricts use in compact 3 kW+ PFC	Preferable only where board space constraints prohibit TO-247 mounting and power level ≤ 1.5 kW
IXTH9N80L2	R_DS(on) = 0.95 Ω max, Q_g = 10.5 nC, no integrated Zener protection	Requires external 18 V gate clamp; lower dv/dt ruggedness (35 V/ns) increases risk in high-noise industrial environments	Suitable only when gate drive circuit includes discrete Zener clamping and layout minimizes coupling noise

Compared with IPP9N80C3 and IXTH9N80L2, STW9N80K5 delivers superior power density (0.73 Ω @ TO-247), guaranteed avalanche robustness, and built-in gate protection-making it the preferred choice for space-constrained, high-reliability 2–5 kW industrial power supplies.

Availability

STW9N80K5 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, UPS inverters, and EV on-board charger PFC stages requiring stable component supply and long-term lifecycle assurance.

Supply support for STW9N80K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

STW9N80K5 belongs to the MDmesh™ K5 high-voltage superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density offline power conversion in industrial and telecom infrastructure.

FAQ

Is STW9N80K5 suitable for use in zero-voltage switching (ZVS) topologies?

Yes. With 6.7 nC Q_gd, 340 pF C_iss, and 292 ns trr, STW9N80K5 enables reliable ZVS in phase-shifted full-bridge and LLC resonant converters. Its low output charge and fast body diode recovery reduce dead-time losses and improve soft-switching window stability across line/load variations.

What is the maximum recommended gate resistor value for hard-switched 65 kHz PFC operation?

For stable 65 kHz operation with 12 nC Q_g, a 10 Ω gate resistor is recommended to limit peak gate current to <1.2 A while maintaining <25 ns turn-on delay. Values above 15 Ω increase switching losses disproportionately due to extended Miller plateau duration.

Does STW9N80K5 require external gate protection in a 400 V DC bus application?

No. The integrated 30 V bidirectional gate-source Zener diodes provide sufficient clamping for typical gate drive overshoots (<±25 V) in well-designed 400 V systems. External TVS is unnecessary unless layout introduces >30 V ringing due to poor grounding or long gate traces.

Can STW9N80K5 replace STP9N80K5 in existing TO-220 layouts?

No. STW9N80K5 uses TO-247 packaging with different pin spacing (5.45 mm e pitch), larger footprint, and tab-connected Drain-requiring PCB redesign, heatsink re-machining, and updated thermal modeling. It is not a drop-in replacement for STP9N80K5 despite identical electrical specs.

STW9N80K5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ K5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 900mOhm @ 3.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 340 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 110W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247-3

STW9N80K5 FAQ

1.How can I place an order for STW9N80K5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STW9N80K5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STW9N80K5 reliable?

The price and inventory of STW9N80K5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STW9N80K5 is usually 5 days.

3.What payment methods are accepted for STW9N80K5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STW9N80K5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STW9N80K5?

STW9N80K5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STW9N80K5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STW9N80K5?

For technical support, including STW9N80K5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STW9N80K5 requirements.

6.How does Aetrix verify that STW9N80K5 is sourced from the original manufacturer or authorized distributors?

All STW9N80K5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STW9N80K5 meets industry standards.

7.What is the process for return or replacement of STW9N80K5?

All STW9N80K5 units undergo pre-shipment inspection (PSI). If there is an issue with STW9N80K5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STW9N80K5 part is unused and in its original packaging.

Return procedure for STW9N80K5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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