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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STWA20N95DK5

Name: STWA20N95DK5
Brand: STMicroelectronics
SKU: STWA20N95DK5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STWA20N95DK5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STWA20N95DK5.pdf

Description:: MOSFET N-CH 950V 18A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STWA20N95DK5 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DK5 series, featuring 950 V V_DS, 275 mΩ typ. R_DS(on) at V_GS = 10 V, 18 A continuous drain current, and fast-recovery body diode with 150 ns trr at T_J = 25 °C. It is engineered for high-efficiency half-bridge and full-bridge resonant converters in industrial SMPS.

For engineers reviewing the STWA20N95DK5 datasheet, STWA20N95DK5 pinout, STWA20N95DK5 application, or STWA20N95DK5 equivalent, key selection criteria include avalanche ruggedness (520 mJ E_AS), dv/dt immunity (50 V/ns), low Q_rr (1 µC), and TO-247 long leads package suitability for high-voltage isolation and thermal management in high-density power stages.

Technical Context

This device implements ST's MDmesh DK5 silicon architecture optimized for ultra-low Q_rr/trr and minimized R_DS(on) × area trade-off. Its fast-recovery body diode enables ZVS operation without external SiC diodes in LLC topologies.

The MOSFET supports unclamped inductive switching up to 6 A avalanche current and maintains stable V_GS(th) (3–5 V) and R_DS(on) across –55 °C to 150 °C, enabling reliable operation in wide-temperature industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	950 V - Withstands DC bus voltages up to 760 V in hard-switched bridges with margin for transients.
R_DS(on) max	330 mΩ - Limits conduction loss to ≤5.4 W at 18 A, enabling compact heatsink design in 1–3 kW systems.
Q_rr	1 µC (T_J = 25 °C) - Reduces diode recovery loss and EMI in high-frequency bridge operation (>100 kHz).
E_AS	520 mJ - Supports single-pulse unclamped inductive energy handling without failure, critical for PFC and motor drive fault tolerance.
dv/dt ruggedness	50 V/ns - Ensures noise-immune gate triggering under fast voltage transients in high-dV/dt environments like HV inverters.
C_iss	1600 pF - Enables predictable gate drive sizing with standard 1–2 A peak drivers for <100 ns switching transitions.
T_J range	–55 to 150 °C - Validated for continuous operation in industrial ambient conditions up to 85 °C with derating.

Pinout & Package

STWA20N95DK5 uses the TO-247 long leads package (JEDEC TO-247-3L variant with extended lead length for enhanced creepage). The package features isolated tab (Drain), center lead (Gate), and right lead (Source) - verified per Figure 21 and Table 9 of DS12132 Rev 3.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	High-voltage power terminal; electrically connected to metal tab - requires insulated mounting in PCB layouts.
G (Lead 1)	Gate	Control input; low C_iss and 4 Ω intrinsic R_G enable fast, low-loss turn-on with minimal gate driver stress.
S (Lead 3)	Source	Power return path and reference for gate drive; tied to system ground or floating node in high-side configurations.

Key Features

Feature	Design Value
Fast-recovery body diode	trr = 150 ns (25 °C), Q_rr = 1 µC - eliminates need for external anti-parallel diode in synchronous rectification and bidirectional topologies.
Low gate charge	Q_g = 50.7 nC - reduces gate drive power loss and allows use of cost-effective 1-A drivers in 100–300 kHz designs.
100% avalanche tested	Single-pulse E_AS = 520 mJ - guarantees robustness against inductive kickback in PFC, UPS, and motor control applications.
High dv/dt ruggedness	50 V/ns - prevents false turn-on during rapid V_DS transitions in high-side switch configurations.

Applications

Industrial SMPS

Server & Telecom PSU

Use Scenario: 2–3 kW resonant LLC DC-DC converter in modular telecom rectifiers.

IC Role / Device Role / Timing Role: High-side primary switch operating at 200–300 kHz with ZVS enabled by fast body diode recovery.

Use Value: 150 ns trr and low Q_rr reduce dead-time losses by >30% versus legacy superjunction MOSFETs, improving full-load efficiency to ≥96.5%.

Use Scenario: Active clamp forward or phase-shifted full-bridge in 48 V server power supplies.

IC Role / Device Role / Timing Role: Main switching device in high-voltage primary side, handling 380–400 V DC bus with tight timing control.

Use Value: 50 V/ns dv/dt rating ensures reliable operation under fast bus transients caused by paralleled VRMs, minimizing spurious turn-on risk.

EV Onboard Charger

Industrial Motor Drive

Use Scenario: PFC boost stage in bi-directional OBCs converting AC to 400/800 V battery bus.

IC Role / Device Role / Timing Role: Boost switch subjected to repetitive unclamped inductive stress during line-cycle transitions.

Use Value: 520 mJ E_AS and 6 A I_AR allow safe operation without snubbers under worst-case overvoltage events, reducing BOM count.

Use Scenario: Inverter leg in 7.5–11 kW HVAC compressors using three-phase 650–950 V DC link.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in high-voltage inverter output stage.

Use Value: 950 V rating and 275 mΩ R_DS(on) support direct replacement of 650 V IGBTs while enabling higher switching frequencies (up to 20 kHz) and lower acoustic noise.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW20N95DK5	Identical die, TO-247 (standard lead length); R_thJC = 0.5 °C/W same, but creepage distance reduced by ~5 mm.	Preferred where board space is constrained and creepage ≥8 mm not required (e.g., enclosed low-altitude industrial enclosures).	Select STW20N95DK5 when mechanical layout prioritizes compact footprint over HV isolation margin.
IPW95R1K2P7	Infineon CoolMOS™ P7; 950 V, 1.2 Ω R_DS(on), higher Q_g (62 nC), no integrated fast diode (requires external SiC).	Suitable for lower-current (<8 A), higher-frequency (>500 kHz) applications where diode recovery is managed externally.	Choose IPW95R1K2P7 only if system-level optimization favors discrete diode control and lower conduction loss is not critical.

Compared with STW20N95DK5, STWA20N95DK5 offers extended creepage for improved safety in open-frame HV designs; versus IPW95R1K2P7, it delivers integrated fast diode functionality and lower R_DS(on), reducing component count and layout complexity in bridge-based topologies.

Availability

STWA20N95DK5 is available at Aetrix Electronics and suitable for industrial SMPS, server & telecom power supplies, EV onboard chargers, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for STWA20N95DK5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, and analog/mixed-signal ICs for industrial, automotive, and consumer markets.

STWA20N95DK5 belongs to the MDmesh DK5 family - designed specifically for high-efficiency, high-voltage resonant and hard-switched power conversion where low Q_rr, high dv/dt immunity, and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current (I_D) for STWA20N95DK5 is 11 A at T_C = 100 °C, as specified in Table 1 of DS12132 Rev 3. This reflects thermal derating due to junction-to-case resistance (0.5 °C/W) and safe operating area limits at elevated temperatures.

Does STWA20N95DK5 have an integrated body diode, and what are its key recovery parameters?

Yes, STWA20N95DK5 integrates a fast-recovery N-channel body diode. Key parameters include reverse recovery time (t_rr) = 150 ns at T_J = 25 °C, Q_rr = 1 µC, and I_RRM = 13.5 A under standard test conditions (ISD = 9 A, di/dt = 100 A/µs, VDD = 60 V).

How does the TO-247 long leads variant differ electrically from the standard TO-247 package?

Electrically, STWA20N95DK5 (TO-247 long leads) and STW20N95DK5 (standard TO-247) share identical silicon die, R_DS(on), Q_g, t_rr, and thermal resistance (R_thJC = 0.5 °C/W). The long leads provide ≥10.2 mm creepage vs. ~5.5 mm, enhancing isolation in high-voltage open-frame designs - no electrical parameter change.

Is STWA20N95DK5 suitable for use in zero-voltage switching (ZVS) circuits?

Yes - its fast-recovery body diode (t_rr = 150 ns, Q_rr = 1 µC) and low output capacitance (C_oss = 76 pF) enable reliable ZVS turn-on in LLC and phase-shifted full-bridge topologies operating up to 300 kHz, as confirmed by ST's application note AN5067 on MDmesh DK5 ZVS implementation.

STWA20N95DK5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ DK5

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 950 V

Current - Continuous Drain (Id) @ 25°C:: 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 330mOhm @ 9A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 50.7 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STWA20N95DK5 FAQ

1.How can I place an order for STWA20N95DK5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STWA20N95DK5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STWA20N95DK5 reliable?

The price and inventory of STWA20N95DK5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STWA20N95DK5 is usually 5 days.

3.What payment methods are accepted for STWA20N95DK5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STWA20N95DK5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STWA20N95DK5?

STWA20N95DK5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STWA20N95DK5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STWA20N95DK5?

For technical support, including STWA20N95DK5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STWA20N95DK5 requirements.

6.How does Aetrix verify that STWA20N95DK5 is sourced from the original manufacturer or authorized distributors?

All STWA20N95DK5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STWA20N95DK5 meets industry standards.

7.What is the process for return or replacement of STWA20N95DK5?

All STWA20N95DK5 units undergo pre-shipment inspection (PSI). If there is an issue with STWA20N95DK5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STWA20N95DK5 part is unused and in its original packaging.

Return procedure for STWA20N95DK5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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