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STMicroelectronics STWA30N65DM6AG

Name: STWA30N65DM6AG
Brand: STMicroelectronics
SKU: STWA30N65DM6AG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STWA30N65DM6AG

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STWA30N65DM6AG.pdf

Description:: MOSFET N-CH 650V 28A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STWA30N65DM6AG from STMicroelectronics is an AEC-Q101 qualified N-channel 650 V, 90 mΩ typ. (110 mΩ max.), 28 A automotive-grade Power MOSFET in TO-247 long leads package, featuring fast-recovery body diode (trr = 126 ns @ 25 °C), low gate charge (Qg = 46 nC), and 100% avalanche tested for ZVS phase-shift converters and high-efficiency bridge topologies.

For engineers reviewing the STWA30N65DM6AG datasheet, STWA30N65DM6AG pinout, STWA30N65DM6AG application, or STWA30N65DM6AG equivalent, key selection criteria include dv/dt ruggedness (100 V/ns), RDS(on) temperature stability, Qrr minimization for reduced switching loss, and Zener-protected gate for ESD robustness in automotive powertrain modules.

Technical Context

This MDmesh DM6-series device uses optimized superjunction architecture to achieve lower RDS(on) per die area versus prior MDmesh generations while maintaining ultra-low Qrr (0.63 µC) and trr (126 ns). Its intrinsic gate resistance (RG = 1.6 Ω) and Crss (1.5 pF) support clean turn-off with minimal Miller-induced oscillation in hard-switched PFC stages.

The integrated fast-recovery body diode enables synchronous rectification in LLC resonant converters without external Schottky replacement. Avalanche energy rating (EAS = 600 mJ) and extreme dv/dt ruggedness (100 V/ns) allow reliable operation under unclamped inductive switching stress in on-board chargers and DC-DC traction inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands full 400 V DC-link voltage with 30 % margin in 800 V-class EV systems.
R_DS(on) max	110 mΩ @ V_GS = 10 V, I_D = 14 A - Enables <1.5 W conduction loss at 28 A continuous current.
Q_g	46 nC - Reduces gate drive power requirement and allows use of smaller gate drivers in space-constrained OBCs.
trr	126 ns @ I_SD = 28 A, di/dt = 100 A/µs - Limits reverse recovery loss in high-frequency half-bridge configurations.
dv/dt ruggedness	100 V/ns - Prevents spurious turn-on during fast voltage transients in motor control gate drivers.
EAS	600 mJ @ T_J = 25 °C - Supports single-pulse fault tolerance without external snubbers in traction inverters.
R_thJC	0.44 °C/W - Enables thermal design margin for 284 W dissipation at case temperature ≤ 100 °C.

Pinout & Package

TO-247 long leads package with isolated tab (D), gate (G), and source (S) terminals. Tab is electrically connected to drain (D); mounting surface must be insulated from heatsink unless referenced to high-side potential.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain terminal / Thermal path	High-voltage output node; primary heat conduction path to heatsink; requires isolation when used in low-side configuration.
G	Gate control input	Low-impedance MOSFET control node; Zener-protected against ±25 V transients; RG = 1.6 Ω limits ringing.
S	Source reference / Return path	Power ground reference for gate drive; carries full load current (28 A continuous); connects to PCB copper pour for low-inductance return.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain applications including on-board chargers and DC-DC converters operating up to 150 °C junction temperature.
Fast-recovery body diode	Qrr = 0.63 µC and trr = 126 ns enable efficient synchronous rectification without external diode in resonant topologies.
Zener-protected gate	Integrated gate oxide protection withstands ±25 V transient overvoltage, eliminating need for external TVS in gate drive circuits.
Extremely high dv/dt ruggedness	100 V/ns rating prevents false triggering during rapid voltage transitions in high-side switch configurations.
100% avalanche tested	Each unit passes single-pulse avalanche stress test at 4 A, ensuring reliability under unclamped inductive fault conditions.

Applications

On-Board Charger (OBC)

DC-DC Traction Converter

Use Scenario: High-frequency interleaved PFC stage operating at 100–200 kHz with 400 V nominal DC-link.

IC Role / Device Role / Timing Role: Main switching transistor in boost PFC cell; handles 28 A RMS current with low conduction + switching loss.

Use Value: Low Qg (46 nC) and Coss eq. (339 pF) reduce gate drive loss and capacitive turn-off energy, improving system efficiency by ≥0.8 % at full load.

Use Scenario: Isolated bidirectional DC-DC converter for 400 V ↔ 48 V power transfer in hybrid electric vehicles.

IC Role / Device Role / Timing Role: Primary-side high-side switch in phase-shifted full-bridge topology; operates with ZVS at 100 kHz.

Use Value: Fast trr (126 ns) and low Qrr (0.63 µC) minimize dead-time losses and improve ZVS window margin across wide load range.

Industrial Motor Drive Inverter

EV Charging Station Power Module

Use Scenario: 15 kW three-phase inverter driving permanent magnet motor in industrial pump system.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter leg; commutates 28 A peak current.

Use Value: 100 V/ns dv/dt ruggedness ensures immunity to voltage spikes induced by stray inductance during IGBT turn-off events.

Use Scenario: 22 kW AC/DC front-end module in modular EV charging station with active rectification.

IC Role / Device Role / Timing Role: Active clamp switch in three-level NPC topology handling 650 V blocking and 28 A conduction.

Use Value: RDS(on) stability over temperature (±10 % from −40 to 150 °C) maintains consistent thermal distribution across parallel devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW38N65M6	RDS(on) = 125 mΩ max., Qg = 52 nC, trr = 140 ns - higher conduction and switching loss.	Same MDmesh M6 family but older generation; lacks Zener gate protection and has lower dv/dt rating (75 V/ns).	Select only if cost sensitivity outweighs efficiency and ruggedness requirements in non-automotive industrial designs.
IXTH30N65X2	RDS(on) = 115 mΩ max., Qg = 42 nC, trr = 105 ns - slightly faster diode but no AEC-Q101 qualification.	Not automotive-qualified; higher EAS (1.2 J) but no 100% avalanche testing; different TO-247 pinout (G-D-S vs D-G-S).	Use only in commercial-grade UPS or solar inverters where automotive compliance is not required and layout accommodates alternate pinout.

Compared with STW38N65M6 and IXTH30N65X2, STWA30N65DM6AG delivers superior automotive reliability (AEC-Q101 + Zener gate), lowest RDS(on)/area, and highest dv/dt immunity-making it optimal for safety-critical EV power conversion where thermal margin and fault robustness are prioritized over marginal gate charge reduction.

Availability

STWA30N65DM6AG is available at Aetrix Electronics and suitable for on-board chargers, traction DC-DC converters, and industrial motor drives requiring stable component supply, automotive-grade traceability, and long-term lifecycle support.

Supply support for STWA30N65DM6AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.

This device belongs to the MDmesh DM6 high-voltage Power MOSFET product line, engineered specifically for zero-voltage switching (ZVS) and high-efficiency bridge topologies in automotive electrification systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current ID at TC = 100 °C is 18 A, as specified in Table 1 of DS13232 Rev 3. This derating reflects thermal limitations of the TO-247 package with RthJC = 0.44 °C/W, ensuring safe operation within the SOA boundary at elevated ambient temperatures typical in engine bay environments.

Is the body diode suitable for synchronous rectification without external components?

Yes-the integrated fast-recovery body diode has trr = 126 ns and Qrr = 0.63 µC at 25 °C, enabling direct use in synchronous rectification for LLC and phase-shifted full-bridge converters. Its low reverse recovery charge reduces switching loss and eliminates need for external Schottky diodes in many 100–200 kHz designs.

Does STWA30N65DM6AG require external gate protection?

No-this device integrates Zener protection between gate and source, rated for ±25 V transient voltage. External gate resistors (e.g., 10–22 Ω) are still recommended for EMI suppression and ringing control, but discrete TVS diodes are unnecessary unless system-level transients exceed ±25 V.

How does the 100% avalanche test impact field reliability?

Each unit undergoes single-pulse avalanche stress at IAR = 4 A and EAS = 600 mJ, verifying robustness under unclamped inductive faults. This screening significantly improves field reliability in motor drives and OBCs where short-circuit events or parasitic inductance can cause destructive voltage overshoot beyond V(BR)DSS.

STWA30N65DM6AG Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 14A, 10V

Vgs(th) (Max) @ Id:: 4.75V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 46 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 2000 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 284W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STWA30N65DM6AG FAQ

1.How can I place an order for STWA30N65DM6AG through Aetrix?

Please submit a Request for Quotation (RFQ) for STWA30N65DM6AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STWA30N65DM6AG reliable?

The price and inventory of STWA30N65DM6AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STWA30N65DM6AG is usually 5 days.

3.What payment methods are accepted for STWA30N65DM6AG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STWA30N65DM6AG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STWA30N65DM6AG?

STWA30N65DM6AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STWA30N65DM6AG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STWA30N65DM6AG?

For technical support, including STWA30N65DM6AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STWA30N65DM6AG requirements.

6.How does Aetrix verify that STWA30N65DM6AG is sourced from the original manufacturer or authorized distributors?

All STWA30N65DM6AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STWA30N65DM6AG meets industry standards.

7.What is the process for return or replacement of STWA30N65DM6AG?

All STWA30N65DM6AG units undergo pre-shipment inspection (PSI). If there is an issue with STWA30N65DM6AG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STWA30N65DM6AG part is unused and in its original packaging.

Return procedure for STWA30N65DM6AG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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