STMicroelectronics STWA40N60M2

Overview

STWA40N60M2 from STMicroelectronics is an N-channel 600 V, 34 A Power MOSFET in TO-247 long leads package, fabricated with MDmesh M2 technology. It delivers 78 mΩ typical R_DS(on), 57 nC total gate charge, and 117 pF output capacitance (C_oss), enabling high-efficiency operation in resonant LLC converters and hard-switched SMPS.

For engineers reviewing the STWA40N60M2 datasheet, STWA40N60M2 pinout, STWA40N60M2 application, or STWA40N60M2 equivalent, key selection criteria include avalanche ruggedness (500 mJ E_AS), dv/dt immunity (50 V/ns), Zener-protected gate, and optimized C_oss profile for soft-switching transitions.

Technical Context

This device employs a strip layout and enhanced vertical structure to minimize conduction loss while maintaining fast switching performance. Its low Q_gd/Q_gs ratio (2.55) and 342 pF C_oss,eq support efficient zero-voltage switching in resonant topologies.

The integrated body diode exhibits 440 ns reverse recovery time at 34 A and 100 A/µs di/dt, with 8.2 µC Q_rr at 25 °C - critical for minimizing commutation losses in bridge-leg configurations.

Key Specifications

Pinout & Package

TO-247 long leads package with isolated tab (drain-connected). Standard lead form per STMicroelectronics mechanical drawing 8463846_6; case temperature measured at tab center.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXTH30N60L2 and IPP60R099C7, STWA40N60M2 offers superior conduction efficiency at 34 A and built-in gate protection - making it optimal for unattended, high-reliability 600 V converter systems where field failure risk must be minimized.

Availability

STWA40N60M2 is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, solar microinverters, and uninterruptible power systems requiring stable component supply and long-term production continuity.

Supply support for STWA40N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, digital, and mixed-signal ICs and discrete devices for automotive, industrial, and power applications.

This device belongs to ST's MDmesh™ M2 high-voltage superjunction MOSFET product line, engineered specifically for high-efficiency resonant and hard-switched SMPS above 300 W where low R_DS(on), controlled C_oss, and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STWA40N60M2 supports 22 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11877 Rev 3. This derating reflects thermal limitations of the TO-247 package with R_thJC = 0.5 °C/W and maximum junction temperature of 150 °C.

Does this MOSFET include integrated gate protection?

Yes - the STWA40N60M2 features an integrated Zener diode between gate and source, rated for ±25 V clamp voltage. This protects the gate oxide from ESD events and driver overvoltage without requiring external components.

How does the C_oss,eq value differ from standard C_oss?

C_oss,eq = 342 pF is defined as the constant capacitance yielding the same V_DS charging time as actual nonlinear C_oss across 0–480 V. It replaces dynamic C_oss in ZVS energy calculations, simplifying E_oss = ½ × C_oss,eq × V_DS² estimation.

Is the TO-247 long leads variant compatible with standard TO-247 footprints?

Yes - the STWA40N60M2 uses the industry-standard TO-247 long leads outline (drawing 8463846_6) with identical D-G-S pin assignment and mechanical dimensions (D = 21.0 mm, E = 15.8 mm). Mounting hole spacing and tab geometry match legacy TO-247 layouts.