STMicroelectronics STWA40N90K5

Overview

STWA40N90K5 from STMicroelectronics is a high-voltage N-channel Power MOSFET using MDmesh K5 technology, rated for 900 V V_DS, 88 mΩ typ. R_DS(on) at V_GS = 10 V, and 40 A continuous drain current at T_C = 25 °C. It delivers ultra-low gate charge (89 nC), 100% avalanche tested performance, and Zener-protected gate, targeting high-efficiency HVDC switching in industrial SMPS and solar inverters.

For engineers reviewing the STWA40N90K5 datasheet, STWA40N90K5 pinout, STWA40N90K5 application, or STWA40N90K5 equivalent, key selection criteria include its 900 V breakdown voltage, 88 mΩ on-resistance, 89 nC total gate charge, 446 W power dissipation, and TO-247 long leads package thermal performance.

Technical Context

This MOSFET employs ST's proprietary vertical MDmesh K5 structure to minimize conduction and switching losses simultaneously. Its 1.3 pF Crss and 3263 pF Ciss enable fast, low-loss hard-switching up to 100 kHz in phase-shifted full-bridge topologies.

The device integrates a robust body diode with 693 ns trr and 22 µC Qrr at 25 °C, supporting ZVS-assisted resonant converters. Its 50 V/ns dv/dt ruggedness and 750 mJ EAS ensure reliable operation under unclamped inductive switching stress.

Key Specifications

Pinout & Package

STWA40N90K5 is housed in a TO-247 long leads package with isolated tab (drain-connected), optimized for high-voltage creepage and manual soldering/rework. The package features extended lead length (L ≈ 20 mm) and enhanced thermal pad geometry per Table 9 in DS11501 Rev 3.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXTH40N90L and IPP90R1K2C3, STWA40N90K5 delivers superior FoM (R_DS(on) × Q_g = 8.8 Ω·nC), integrated gate protection, and proven avalanche robustness-making it the preferred choice for new 3–10 kW high-efficiency HVDC designs.

Availability

STWA40N90K5 is available at Aetrix Electronics and suitable for industrial SMPS, solar string inverters, EV onboard chargers, and high-voltage UPS systems requiring stable component supply across multi-year production cycles.

Supply support for STWA40N90K5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh K5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching in 600–1000 V DC applications such as server PSUs, renewable energy converters, and industrial motor drives.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STWA40N90K5 supports 25 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS11501 Rev 3. This derating reflects thermal limits imposed by its 0.28 °C/W R_thJC and 150 °C maximum junction temperature, requiring appropriate heatsinking for sustained operation.

Does STWA40N90K5 have an integrated body diode, and what are its key recovery parameters?

Yes, it features a monolithic source-drain body diode rated for 40 A continuous and 160 A pulsed current. Key recovery specs include 693 ns trr and 22 µC Q_rr at T_J = 25 °C, with degradation to 884 ns and 29 µC at 150 °C-critical for snubberless operation in hard-switched bridges.

How does the TO-247 long leads variant differ electrically from the standard TO-247 version?

STWA40N90K5 (long leads) and STW40N90K5 (standard) share identical electrical specifications, silicon die, and thermal resistance values. The long leads variant differs only mechanically-offering 20 mm lead length vs. 14.5 mm-to ease manual assembly and improve mechanical reliability in high-vibration environments.

Is gate oxide protection implemented via discrete Zener or integrated structure?

The Zener protection is fully integrated into the gate oxide stack, as confirmed in ST's MDmesh K5 process documentation. It clamps gate-source voltage to ±30 V without external components, verified across 100% production testing and referenced in the "Features" section of DS11501 Rev 3.