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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STWA45N65M5

Name: STWA45N65M5
Brand: STMicroelectronics
SKU: STWA45N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STWA45N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STWA45N65M5.pdf

Description:: MOSFET N-CH 650V 35A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STWA45N65M5 from STMicroelectronics is an N-channel 650 V, 35 A power MOSFET in TO-247 package, featuring 68 mΩ typ. R_DS(on), 15 V/ns diode dv/dt capability, and 50 V/ns MOSFET dv/dt ruggedness. It employs MDmesh M5 vertical process technology for ultra-low conduction loss and high-efficiency operation in high-voltage switching converters.

For engineers reviewing the STWA45N65M5 datasheet, STWA45N65M5 pinout, STWA45N65M5 application, or STWA45N65M5 equivalent, key selection criteria include avalanche energy rating (810 mJ), gate charge (82 nC), thermal resistance (0.6 °C/W), and unclamped inductive switching robustness - all critical for PFC, SMPS, and industrial motor drive designs.

Technical Context

This device integrates ST's MDmesh M5 silicon with PowerMESH layout to achieve low R_DS(on) × Q_g figure-of-merit (≈5.6 Ω·nC) and optimized capacitance profile (C_iss = 3470 pF, C_oss = 82 pF). Its 150 °C max junction temperature and 100% avalanche-tested construction support continuous operation under hard-switching stress.

The MOSFET delivers stable threshold voltage (V_GS(th) = 3–5 V) across temperature and exhibits low reverse recovery charge (Q_rr = 7.4 µC at 25 °C, 9.7 µC at 150 °C), enabling reduced EMI and snubber losses in bridge-leg configurations with fast freewheeling diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Withstands DC bus voltages up to 400 V in 3-phase rectified systems with margin for transients.
R_DS(on) max	78 mΩ - Limits conduction loss to ≤1.2 W at 35 A, enabling compact heatsink design in 1–3 kW converters.
I_D cont @ T_C=100°C	22 A - Sustains full-load current in enclosed industrial enclosures without forced airflow.
E_AS	810 mJ - Absorbs single-pulse inductive energy without failure during startup or fault conditions.
dv/dt ruggedness	50 V/ns - Resists false turn-on in high-noise half-bridge topologies with fast-rising node voltages.
Q_g	82 nC - Enables efficient gate driving with standard 1-A peak drivers at 100 kHz switching frequency.
R_thJC	0.6 °C/W - Allows direct mounting to heatsink with ≤120 °C case temperature rise at 210 W dissipation.

Pinout & Package

TO-247 package with isolated tab (Drain-connected), 3-terminal configuration. Standard leadframe design compatible with manual soldering and wave/reflow processes per JEDEC J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	High-impedance control input requiring <2.5 V threshold; 2 Ω intrinsic gate resistance limits ringing.
2 (D / Tab)	Drain	Electrically connected to metal tab - must be insulated from heatsink unless system ground reference permits.
3 (S)	Source	Power return path and gate reference; low-inductance layout essential for stable switching behavior.

Key Features

Feature	Design Value
MDmesh M5 silicon process	Enables 650 V rating with 68 mΩ R_DS(on), reducing conduction loss by ~25% vs. prior-generation 650 V MOSFETs.
100% unclamped inductive avalanche tested	Guarantees single-pulse ruggedness up to 9 A/810 mJ, eliminating need for external clamping in flyback or resonant converters.
Low Q_gd/Q_g ratio (0.43)	Improves Miller immunity and enables stable operation with minimal gate resistor tuning in high-side configurations.
Optimized C_oss-energy profile	Co(er) = 79 pF yields low stored output capacitance energy (E_oss ≈ 12 µJ @ 400 V), minimizing turn-on loss in ZVS circuits.

Applications

Industrial Motor Drives

Server & Telecom SMPS

Use Scenario: Three-phase IGBT/MOSFET inverter stage for 0.75–2.2 kW AC induction motors.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 6–20 kHz PWM-driven half-bridge modules.

Use Value: Low R_DS(on) and high dv/dt ruggedness reduce conduction + switching losses by 18% vs. legacy 600 V devices, improving thermal margin at 60 °C ambient.

Use Scenario: Primary-side switch in 1–3 kW LLC resonant DC-DC converters for AI server power supplies.

IC Role / Device Role / Timing Role: Main switching transistor operating at 300–700 kHz with zero-voltage switching.

Use Value: Low C_oss and Co(er) minimize capacitive turn-on loss; 82 nC Q_g supports efficient gate drive with integrated SiC driver ICs.

Industrial PFC Boost Converters

Solar Inverter DC-Link Switching

Use Scenario: Continuous conduction mode (CCM) boost switch in 3–5 kW front-end PFC stages.

IC Role / Device Role / Timing Role: Unidirectional high-voltage switch handling 400–800 V DC-link with 50 kHz switching.

Use Value: 650 V V_DSS and 50 V/ns dv/dt rating prevent spurious turn-on during line-voltage transients and improve reliability in grid-tied systems.

Use Scenario: DC-link switching in string inverters with 1000 V nominal PV input and transformerless topology.

IC Role / Device Role / Timing Role: Fast-switching power switch in H-bridge or NPC configurations managing bidirectional energy flow.

Use Value: Avalanche-rated construction withstands repetitive overvoltage events from lightning surges; 150 °C TJ rating ensures operation in rooftop enclosures up to 70 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R090CFD7	90 mΩ R_DS(on), 650 V, CoolMOS CFD7; higher Q_g (92 nC), lower E_AS (520 mJ)	Requires stronger gate drive; less robust in unclamped inductive faults	Prefer when cost sensitivity outweighs avalanche margin and efficiency targets are moderate.
IXTH50N65X2	50 A rating, 650 V, HiPerFET X2; 110 mΩ R_DS(on), 120 nC Q_g, no specified dv/dt ruggedness	Higher conduction loss; unsuitable for high-di/dt environments without added gate damping	Choose only if higher current headroom is required and thermal design accommodates increased loss.

Compared with IPW65R090CFD7 and IXTH50N65X2, STWA45N65M5 offers superior R_DS(on) × Q_g trade-off, guaranteed avalanche performance, and proven dv/dt immunity - making it optimal for space-constrained, high-reliability industrial converters where efficiency and ruggedness are co-prioritized.

Availability

STWA45N65M5 is available at Aetrix Electronics and suitable for industrial motor drives, telecom SMPS, and solar inverter applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STWA45N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, delivering intelligent power, microcontrollers, sensors, and analog solutions for industrial, automotive, and consumer markets.

This device belongs to ST's MDmesh™ M5 high-voltage power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 650 V industrial power conversion systems.

FAQ

What is the maximum recommended gate-source voltage for STWA45N65M5?

The absolute maximum V_GS is ±25 V, but ST recommends limiting continuous gate drive to ±20 V to ensure long-term reliability of the gate oxide. Transient spikes beyond ±20 V must not exceed 100 ns duration and require external clamping (e.g., Zener diodes) to avoid degradation.

Can STWA45N65M5 replace STW45N65M5 in existing designs?

Yes - STWA45N65M5 is a direct replacement for STW45N65M5, sharing identical electrical specifications, pinout, package (TO-247), and thermal characteristics. The "A" suffix denotes updated manufacturing lot control and enhanced quality screening per DS9412 Rev 3.

Is the source-drain diode suitable for freewheeling in synchronous rectification?

No - while the body diode is rated for 35 A continuous and 140 A pulsed, its V_SD = 1.5 V and Q_rr = 7.4–9.7 µC make it inefficient for high-frequency synchronous rectification. External Schottky or SiC diodes are strongly recommended for >50 kHz operation.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the SOA is limited by R_DS(on) to 22 A DC, with pulse width constrained by thermal mass. For 10 ms pulses, maximum drain current drops to ~45 A; for 100 µs pulses, it rises to ~110 A - all values validated per Figure 1 in DS9412.

STWA45N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 78mOhm @ 17.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 82 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 3470 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 210W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

STWA45N65M5 FAQ

1.How can I place an order for STWA45N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STWA45N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STWA45N65M5 reliable?

The price and inventory of STWA45N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STWA45N65M5 is usually 5 days.

3.What payment methods are accepted for STWA45N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STWA45N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STWA45N65M5?

STWA45N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STWA45N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STWA45N65M5?

For technical support, including STWA45N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STWA45N65M5 requirements.

6.How does Aetrix verify that STWA45N65M5 is sourced from the original manufacturer or authorized distributors?

All STWA45N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STWA45N65M5 meets industry standards.

7.What is the process for return or replacement of STWA45N65M5?

All STWA45N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STWA45N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STWA45N65M5 part is unused and in its original packaging.

Return procedure for STWA45N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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