STMicroelectronics STWA48N60M2

Overview

STWA48N60M2 from STMicroelectronics is an N-channel 600 V, 70 mΩ (max) MDmesh™ M2 Power MOSFET in TO-247 long leads package, rated for 42 A continuous drain current at T_C = 25 °C and featuring 70 nC total gate charge, 143 pF output capacitance, and 100% avalanche tested ruggedness. It delivers high-efficiency switching in high-voltage DC-DC converters and industrial SMPS.

For engineers reviewing the STWA48N60M2 datasheet, STWA48N60M2 pinout, STWA48N60M2 application, or STWA48N60M2 equivalent, key selection criteria include R_DS(on) stability over temperature, COSS profile under 480 V, dv/dt ruggedness (50 V/ns), and Zener-protected gate integrity - all critical for hard-switched PFC and resonant LLC stages.

Technical Context

This device employs ST's MDmesh M2 strip layout and optimized vertical structure to achieve low conduction loss and fast, controlled switching. Its 600 V V_(BR)DSS, 70 mΩ R_DS(on) max, and 143 pF C_OSS enable high-frequency operation with reduced switching losses in continuous conduction mode (CCM) topologies.

The integrated Zener-protected gate ensures robust ESD immunity (±25 V V_GS rating), while its 15 V/ns diode recovery dv/dt and 50 V/ns MOSFET dv/dt ruggedness support reliable operation in inductive load switching and unclamped inductive turn-off conditions.

Key Specifications

Pinout & Package

TO-247 long leads package with isolated tab (drain-connected). Standard through-hole mounting with 2.54 mm lead pitch and 20.0 mm lead length. Thermal resistance R_thJC = 0.42 °C/W enables >250 W dissipation with moderate heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IXTH48N60L2 and IPP60R099C7, STWA48N60M2 offers superior avalanche ruggedness (1 J E_AS vs 0.5 J), tighter R_DS(on) tolerance (60–70 mΩ vs 72–85 mΩ), and built-in gate protection - making it optimal for industrial SMPS where reliability under transient overload is non-negotiable.

Availability

STWA48N60M2 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, solar DC-DC converters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for STWA48N60M2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power applications since 1987.

This device belongs to ST's MDmesh™ M2 high-voltage Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 600 V industrial and renewable energy systems.

FAQ

What is the maximum recommended gate-source voltage for STWA48N60M2?

The absolute maximum V_GS is ±25 V per datasheet Table 1. Operation above ±20 V risks accelerated gate oxide degradation, while operation below ±12 V may compromise safe turn-off margin. The device integrates a Zener clamp between gate and source, enabling direct connection to 15 V logic-level drivers without external protection.

Does STWA48N60M2 have an integrated body diode, and what are its recovery characteristics?

Yes, it features a monolithic source-drain diode with 42 A continuous forward current rating. At T_j = 25 °C, it exhibits 1.6 V forward voltage at 21 A, 487 ns reverse recovery time, and 9.1 µC reverse recovery charge under 100 A/µs di/dt - values that rise to 605 ns and 12.5 µC at 150 °C junction temperature.

How does the thermal resistance of STWA48N60M2 impact heatsink design?

With R_thJC = 0.42 °C/W and R_thJA = 50 °C/W, the device transfers heat efficiently to the case but poorly to ambient without forced airflow. For 300 W dissipation at T_j = 150 °C and T_C = 80 °C, a heatsink with ≤0.3 °C/W thermal resistance (including interface material) is required to maintain safe junction temperature.

Can STWA48N60M2 replace older STW48N60M2 devices in existing designs?

Yes - STWA48N60M2 is a direct replacement with identical pinout, package, and electrical specifications. Key improvements include updated avalanche testing per Rev 4 (October 2024), refined C_OSS(eq) characterization, and enhanced process control yielding tighter R_DS(on) distribution (60–70 mΩ typ/max vs previous 65–75 mΩ).