STMicroelectronics STWA50N65DM2AG

Overview

STWA50N65DM2AG from STMicroelectronics is an automotive-grade N-channel 650 V, 87 mΩ max., 38 A Power MOSFET in TO-247 long leads package, featuring fast-recovery body diode (trr = 150 ns @ 25 °C), 69 nC total gate charge, and AEC-Q101 qualification. It serves as a high-efficiency primary-side switch in ZVS phase-shift converters and full-bridge topologies for on-board chargers and traction inverters.

For engineers reviewing the STWA50N65DM2AG datasheet, STWA50N65DM2AG pinout, STWA50N65DM2AG application, or STWA50N65DM2AG equivalent, key selection criteria include its 50 V/ns dv/dt ruggedness, 850 mJ single-pulse avalanche energy, low Coss eq (256 pF), Zener-protected gate, and 100% avalanche-tested reliability under automotive thermal stress.

Technical Context

This MDmesh DM2 device employs a superjunction structure optimized for high-voltage switching with minimized Qrr (0.96 μC) and trr (150 ns), enabling reduced switching losses in resonant and soft-switching topologies. Its low Rg (4 Ω) and fast Qgs/Qgd ratio support clean turn-on/turn-off control under high di/dt conditions.

The integrated fast-recovery body diode eliminates need for external anti-parallel diodes in bridge configurations. Zener gate protection and 50 V/ns MOSFET dv/dt ruggedness ensure robust operation during voltage transients and inductive load commutation.

Key Specifications

Pinout & Package

TO-247 long leads package with isolated tab (D), standard lead configuration: Pin 1 = Gate (G), Pin 2 = Drain (D, connected to tab), Pin 3 = Source (S).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STW48N65M5 and IXFH50N65X2, STWA50N65DM2AG uniquely combines AEC-Q101 qualification, Zener gate protection, and industry-leading trr/Qrr performance-making it the only choice for automotive OBC and traction auxiliary converters demanding simultaneous reliability, ruggedness, and soft-switching efficiency.

Availability

STWA50N65DM2AG is available at Aetrix Electronics and suitable for on-board chargers, traction inverter auxiliary supplies, solar microinverters, and industrial UPS inverters requiring stable component supply across automotive and industrial production programs.

Supply support for STWA50N65DM2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, MCU, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh DM2 series-engineered specifically for high-efficiency, high-frequency power conversion in automotive charging and traction systems where low Qrr, fast diode recovery, and AEC-Q101 reliability are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STWA50N65DM2AG supports 24 A continuous drain current at TC = 100 °C, as specified in Table 1 of DS11984 Rev 3. This derating reflects thermal limitations of the TO-247 package and junction-to-case thermal resistance of 0.42 °C/W, ensuring safe operation within TJ ≤ 150 °C under sustained load.

Does this MOSFET require an external gate resistor for stability?

A gate resistor is required for controlled switching speed and EMI management, but not for intrinsic stability-the device's 4 Ω intrinsic gate resistance and low Crss (3 pF) provide inherent Miller immunity. Typical RG values range from 4.7 Ω to 22 Ω depending on desired td(on)/td(off) balance and layout parasitics, as validated in Figure 13 test circuit.

How is the fast-recovery body diode characterized in inductive switching?

The body diode is fully characterized per Table 7: trr = 150 ns and Qrr = 0.96 μC at TJ = 25 °C, ISD = 38 A, di/dt = 100 A/μs, VDD = 60 V. At TJ = 150 °C, trr increases to 245 ns and Qrr to 2.7 μC-data confirmed by Figure 15 test circuit and used directly in snubber and loss calculations for bridge designs.

Is the TO-247 long leads variant compatible with standard TO-247 mounting hardware?

Yes-the TO-247 long leads package uses identical footprint and mounting hole dimensions (E = 15.7–15.9 mm, D = 20.9–21.1 mm) as standard TO-247, per Table 8 mechanical data. Lead length is extended for improved creepage in high-voltage PCB layouts, but screw-hole pitch, tab size, and thermal pad geometry remain unchanged for drop-in heatsink compatibility.