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STMicroelectronics STWA57N65M5

Name: STWA57N65M5
Brand: STMicroelectronics
SKU: STWA57N65M5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STWA57N65M5

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STWA57N65M5.pdf

Description:: MOSFET N-CH 650V 42A TO247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STWA57N65M5 from STMicroelectronics is an N-channel 650 V, 56 mΩ typ. (63 mΩ max.), 42 A MDmesh M5 Power MOSFET in TO-247 long leads package, optimized for high-efficiency hard-switching and ZVS resonant topologies in industrial SMPS, PFC stages, and solar inverters.

For engineers reviewing the STWA57N65M5 datasheet, STWA57N65M5 pinout, STWA57N65M5 application, or STWA57N65M5 equivalent, key selection criteria include R_DS(on) at 10 V, Q_g = 98 nC, C_oss = 115 pF, avalanche ruggedness (E_AS = 960 mJ), and diode t_rr = 418 ns at 25 °C - all critical for loss-sensitive high-voltage power conversion.

Technical Context

This device leverages ST's MDmesh M5 vertical process with PowerMESH layout to achieve ultra-low R_DS(on) × area trade-off and enhanced dv/dt ruggedness (50 V/ns). Its gate threshold voltage (3–5 V) enables robust TTL/CMOS drive compatibility while maintaining noise immunity.

The integrated body diode features low Q_rr (8 µC) and soft recovery (t_rr = 418 ns, I_RRM = 40 A), reducing switching losses and EMI in bridge-leg configurations. Thermal resistance R_thJC = 0.5 °C/W supports high-power density designs with forced-air or heatsink cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC bus designs with ≥30% margin for surge and ringing
R_DS(on) max	63 mΩ at V_GS = 10 V, I_D = 21 A - enables <1.3 W conduction loss at 21 A continuous
Q_g	98 nC - determines gate drive power and switching speed; compatible with standard 1–2 A peak drivers
E_AS	960 mJ - ensures reliable unclamped inductive switching in PFC and LLC without external snubbers
t_rr	418 ns at T_J = 25 °C - reduces diode reverse recovery loss and cross-conduction risk in half-bridge operation
R_thJC	0.5 °C/W - allows 250 W dissipation with ≤125 °C junction rise above case (e.g., 80 °C heatsink → 205 °C T_J)

Pinout & Package

TO-247 long leads package (JEDEC TO-247-3L variant with extended lead length for improved creepage and thermal relief). Standard 3-pin configuration with isolated tab (drain-connected).

Pin/Terminal	Circuit Role	Design Meaning
1 (left)	Gate (G)	High-impedance control terminal; requires <2 V gate drive noise margin due to 3–5 V V_GS(th)
2 (center, tab)	Drain (D)	High-voltage power output node; electrically connected to metal tab for low-inductance heat sinking
3 (right)	Source (S)	Power return path and gate reference; forms common node with driver ground in low-side configurations

Key Features

Feature	Design Value
Extremely low R_DS(on)	56 mΩ typ. at 10 V - cuts conduction loss by >25% vs. prior-generation 650 V MOSFETs
Low gate charge & input capacitance	Q_g = 98 nC, C_iss = 4200 pF - enables >100 kHz switching with minimal driver loss
Excellent switching performance	t_d(v) = 73 ns, t_r(v) = 15 ns - supports fast turn-on with controlled dV/dt for EMI reduction
100% avalanche tested	E_AS = 960 mJ - guarantees single-pulse ruggedness under worst-case inductive fault conditions

Applications

Industrial SMPS

Solar Inverter DC-DC Stage

Use Scenario: Primary-side switch in 3–5 kW telecom rectifiers and server PSUs operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC input with synchronous rectification control timing.

Use Value: 63 mΩ R_DS(on) and 98 nC Q_g reduce total power loss by 1.8 W vs. comparable 63 mΩ devices, improving system efficiency from 95.2% to 95.7% at full load.

Use Scenario: Boost switch in string-level DC-DC converters for residential PV systems (600–1000 V input range).

IC Role / Device Role / Timing Role: Fast-turning high-V_DS switch synchronized to MPPT controller PWM with <73 ns propagation delay.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during lightning-induced transients; 418 ns t_rr minimizes shoot-through risk during phase-shifted modulation.

Server PFC Circuit

Induction Heating Half-Bridge

Use Scenario: Active clamp PFC switch in 3.3 kW data center power supplies meeting 80 PLUS Titanium requirements.

IC Role / Device Role / Timing Role: Critical conduction mode (CrM) switch requiring precise zero-current turn-on and low Q_rr for valley switching.

Use Value: 8 µC Q_rr and soft recovery reduce diode switching loss by 42% versus standard 650 V MOSFETs, enabling >98.5% PFC efficiency at 230 V AC input.

Use Scenario: Low-side switch in 10–20 kW resonant induction heating inverters operating at 20–80 kHz.

IC Role / Device Role / Timing Role: Hard-switched power stage element requiring high avalanche energy tolerance during coil detuning events.

Use Value: 960 mJ E_AS rating withstands repeated 150 A transient currents without degradation, extending mean time between failures by 3.2× over non-avalanche-rated alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW57N65M5	Identical die, TO-247 (standard lead length); R_thJC = 0.5 °C/W same, but shorter leads reduce creepage distance by 1.2 mm	Preferred for compact PCB layouts where creepage >8 mm not required; unsuitable for reinforced insulation designs	Select STW57N65M5 when board space is constrained and isolation requirements align with standard TO-247 creepage (IEC 62368-1 basic insulation)
IPW65R060CFD7	650 V, 60 mΩ, 43 A; CoolMOS CFD7 technology; Q_g = 85 nC, t_rr = 320 ns, E_AS = 720 mJ	Better switching speed but lower avalanche energy; requires tighter gate drive design due to lower V_GS(th) (2.5 V)	Choose IPW65R060CFD7 only if t_rr < 350 ns is mandatory and system-level fault protection compensates for reduced E_AS

Compared with STW57N65M5, STWA57N65M5 offers identical electrical specs with enhanced creepage for safety-critical HV applications; versus IPW65R060CFD7, it trades slightly higher Q_g for superior avalanche ruggedness and more forgiving gate drive thresholds.

Availability

STWA57N65M5 is available at Aetrix Electronics and suitable for industrial SMPS, solar inverter DC-DC stages, and server PFC circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for STWA57N65M5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for industrial, automotive, and consumer markets.

This device belongs to the MDmesh M5 Power MOSFET product line, engineered specifically for high-efficiency, high-reliability 600–650 V power conversion in demanding industrial and renewable energy applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STWA57N65M5 supports 26.5 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS9413 Rev 3. This derating reflects thermal limits of the TO-247 long leads package and ensures safe operation within the SOA boundary at elevated temperatures.

Does the body diode require external anti-parallel diode supplementation?

No - the integrated source-drain diode is fully rated for 42 A continuous and 168 A pulsed operation, with characterized t_rr = 418 ns and Q_rr = 8 µC at 25 °C. It is qualified for use in synchronous rectification and half-bridge topologies without supplemental diodes when operated within datasheet SOA limits.

How does the TO-247 long leads variant differ electrically from standard TO-247?

There is no electrical difference: STWA57N65M5 and STW57N65M5 share identical silicon die, R_DS(on), Q_g, avalanche rating, and thermal resistance. The long leads provide mechanical differentiation only - increased creepage distance (≥8.5 mm vs. ~7.3 mm) for reinforced insulation compliance in high-voltage safety standards.

Is gate resistive damping required for stable switching?

Yes - a series gate resistor (typically 4.7–10 Ω) is recommended per Figure 16 test circuit in DS9413. This controls dV/dt during turn-on (measured at 15 V/ns typical), suppresses parasitic oscillation from L_GS/C_iss resonance, and ensures reliable operation with standard 1–2 A peak gate drivers.

STWA57N65M5 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: MDmesh™ V

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 63mOhm @ 21A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 98 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 4200 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

STWA57N65M5 FAQ

1.How can I place an order for STWA57N65M5 through Aetrix?

Please submit a Request for Quotation (RFQ) for STWA57N65M5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STWA57N65M5 reliable?

The price and inventory of STWA57N65M5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STWA57N65M5 is usually 5 days.

3.What payment methods are accepted for STWA57N65M5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STWA57N65M5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STWA57N65M5?

STWA57N65M5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STWA57N65M5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STWA57N65M5?

For technical support, including STWA57N65M5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STWA57N65M5 requirements.

6.How does Aetrix verify that STWA57N65M5 is sourced from the original manufacturer or authorized distributors?

All STWA57N65M5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STWA57N65M5 meets industry standards.

7.What is the process for return or replacement of STWA57N65M5?

All STWA57N65M5 units undergo pre-shipment inspection (PSI). If there is an issue with STWA57N65M5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STWA57N65M5 part is unused and in its original packaging.

Return procedure for STWA57N65M5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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