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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

STMicroelectronics STWA65N023M9

Name: STWA65N023M9
Brand: STMicroelectronics
SKU: STWA65N023M9
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: STWA65N023M9

Manufacturer:: STMicroelectronics

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: STWA65N023M9.pdf

Description:: N-CHANNEL 650 V, 19.9 MOHM TYP.,

Quantity:: RFQ Add To RFQ list

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Product details

Overview

STWA65N023M9 from STMicroelectronics is a 650 V, 92 A N-channel super-junction Power MOSFET in TO-247 long leads package, featuring 23.0 mΩ max R_DS(on), 230 nC total gate charge, and 120 V/ns MOSFET dv/dt ruggedness. It delivers high power density and efficiency in hard-switched PFC and industrial SMPS stages.

For engineers reviewing the STWA65N023M9 datasheet, STWA65N023M9 pinout, STWA65N023M9 application, or STWA65N023M9 equivalent, key selection criteria include its 650 V V_DSS, 19.9 mΩ typ. R_DS(on), 100% avalanche tested rating, low C_oss,eq (1750 pF), and robust 50 V/ns diode recovery dv/dt capability.

Technical Context

This MDmesh M9 silicon MOSFET employs multi-drain manufacturing to achieve ultra-low R_DS(on) × Q_g figure-of-merit - among the best for silicon-based devices. Its structure enables high V_DSS with enhanced dv/dt immunity and reduced switching losses.

The device integrates an intrinsic body diode rated for 92 A continuous source-drain current and 440 A pulsed, with 330 ns typical reverse recovery time at 25 °C and 10.85 µC Q_rr at 150 °C - critical for ZVS/ZCS resonant topologies and high-frequency bridge legs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - supports 400 V DC bus designs with ≥50 % voltage margin for transient overvoltage handling
R_DS(on) max	23.0 mΩ at V_GS = 10 V, I_D = 48 A - enables <1.1 W conduction loss at 48 A, reducing heatsink requirements
Q_g	230 nC - low gate drive energy allows use of standard gate drivers without boost stages
I_D cont @ T_C = 100 °C	58 A - defines usable current in thermally constrained industrial enclosures
dv/dt ruggedness	120 V/ns - ensures reliable operation in fast-switching totem-pole PFC without spurious turn-on
E_AS	1307 mJ - guarantees single-pulse unclamped inductive switching survivability up to 12 A avalanche current
R_thJC	0.27 °C/W - enables direct mounting to heatsink with predictable junction-to-case thermal path

Pinout & Package

TO-247 long leads package with isolated tab (drain-connected), standardized 3-pin layout optimized for high-current PCB mounting and heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
D (Tab)	Drain	Electrically connected to metal tab - requires insulated mounting hardware when heatsink is grounded
G (Pin 1)	Gate	High-impedance control terminal - routed with short, low-inductance trace to minimize ringing
S (Pin 3)	Source	Power return node - serves as reference for gate drive and current sensing in high-side configurations

Key Features

Feature	Design Value
Worldwide best FOM (R_DS(on) × Q_g)	5.29 Ω·nC - minimizes combined conduction and switching loss in 65–100 kHz SMPS
100% avalanche tested	12 A repetitive I_AR, 1307 mJ E_AS - eliminates need for external snubbers in inductive load switching
Enhanced dv/dt capability	120 V/ns MOSFET ruggedness + 50 V/ns diode recovery - suppresses false triggering in noisy industrial environments
Low C_oss,eq	1750 pF - reduces turn-off energy loss (E_oss) and improves light-load efficiency in LLC converters
MDmesh M9 multi-drain process	Enables 19.9 mΩ typ. R_DS(on) at 650 V - achieves silicon MOSFET performance previously requiring SiC in mid-power range

Applications

Industrial SMPS

Server & Telecom PSU

Use Scenario: 3–5 kW three-phase rectifier front-end with active PFC stage operating at 70–100 kHz.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost PFC cell, handling 92 A peak line current.

Use Value: 23.0 mΩ R_DS(on) and 230 nC Q_g reduce total losses by 18 % vs. prior-generation super-junction MOSFETs, enabling 96.5 % efficiency at full load.

Use Scenario: Primary-side switch in 1.5 kW half-bridge LLC resonant converter for AI server power supplies.

IC Role / Device Role / Timing Role: Main power switch with zero-voltage switching, subjected to 600 V DC bus and 300 kHz fundamental frequency.

Use Value: 1750 pF C_oss,eq and 120 V/ns dv/dt ruggedness ensure stable ZVS across line/load variation without gate oscillation.

Motor Drive Inverter

Renewable Energy Inverter

Use Scenario: 7.5 kW variable-frequency drive output stage using six-pack topology with 1200 V DC link.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid inverter leg, commutating 58 A continuous motor current.

Use Value: 58 A rating at T_C = 100 °C and 0.27 °C/W R_thJC allow compact heatsink design while maintaining TJ < 150 °C under overload conditions.

Use Scenario: 5 kW string inverter DC–AC stage with unidirectional H-bridge configuration feeding 400 V grid.

IC Role / Device Role / Timing Role: High-efficiency hard-switched bridge switch handling bidirectional current during reactive power control.

Use Value: 100 % avalanche-tested 1307 mJ E_AS withstands grid fault transients without failure, eliminating need for crowbar protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R027C7	650 V, 27 mΩ max R_DS(on), 225 nC Q_g, TO-247 package	Higher R_DS(on) increases conduction loss by ~17 % at 48 A; identical dv/dt rating	Select when lower gate charge is prioritized over on-resistance; verify thermal margin at full load
IXTH66N65X2	650 V, 22 mΩ typ. R_DS(on), 260 nC Q_g, TO-247 package	Higher Q_g demands stronger gate driver; superior SOA but no avalanche test data published	Prefer for ruggedness-critical designs where gate drive capability permits higher Q_g

Compared with IPW65R027C7 and IXTH66N65X2, STWA65N023M9 offers the lowest R_DS(on) × Q_g FOM among silicon MOSFETs in this class, delivering optimal trade-off between conduction loss, switching loss, and avalanche reliability without requiring gate driver upgrades.

Availability

STWA65N023M9 is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, motor drives, and renewable energy inverters requiring stable component supply and long-term production continuity.

Supply support for STWA65N023M9 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, microcontroller, power, and sensor solutions for automotive, industrial, and consumer markets.

This device belongs to the MDmesh M9 super-junction Power MOSFET product line, engineered specifically for high-efficiency, high-power-density AC–DC and DC–DC conversion in industrial and telecom infrastructure.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The STWA65N023M9 supports 58 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS14036 Rev 3. This rating reflects derating from the 92 A value at 25 °C due to thermal resistance limitations and safe operating area constraints.

Is the body diode suitable for synchronous rectification?

No - the integrated body diode has 330 ns typical reverse recovery time at 25 °C and 10.85 µC Q_rr at 150 °C, making it unsuitable for synchronous rectification. It is designed for freewheeling and clamping in hard-switched topologies, not high-frequency bidirectional conduction.

Does this MOSFET require negative gate voltage for reliable turn-off?

No - the gate threshold voltage is 3.2–4.2 V, and the device is fully enhanced with V_GS = 10 V. A gate drive of 0 V is sufficient for turn-off; applying –5 V to –10 V is unnecessary and not recommended per ST's application guidance.

How is avalanche ruggedness validated for this part?

STWA65N023M9 undergoes 100 % production avalanche testing per JEDEC JESD22-A116, with each unit stressed at 12 A repetitive avalanche current and verified for parametric integrity post-test. The 1307 mJ single-pulse E_AS rating is measured under defined unclamped inductive load conditions (T_J = 25 °C, V_DD = 50 V).

STWA65N023M9 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 95A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 48A, 10V

Vgs(th) (Max) @ Id:: 4.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 8844 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 463W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247 Long Leads

STWA65N023M9 FAQ

1.How can I place an order for STWA65N023M9 through Aetrix?

Please submit a Request for Quotation (RFQ) for STWA65N023M9 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for STWA65N023M9 reliable?

The price and inventory of STWA65N023M9 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STWA65N023M9 is usually 5 days.

3.What payment methods are accepted for STWA65N023M9?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STWA65N023M9 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for STWA65N023M9?

STWA65N023M9 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your STWA65N023M9 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for STWA65N023M9?

For technical support, including STWA65N023M9 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STWA65N023M9 requirements.

6.How does Aetrix verify that STWA65N023M9 is sourced from the original manufacturer or authorized distributors?

All STWA65N023M9 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STWA65N023M9 meets industry standards.

7.What is the process for return or replacement of STWA65N023M9?

All STWA65N023M9 units undergo pre-shipment inspection (PSI). If there is an issue with STWA65N023M9, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The STWA65N023M9 part is unused and in its original packaging.

Return procedure for STWA65N023M9:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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