STMicroelectronics STWA65N60DM6

Overview

STWA65N60DM6 from STMicroelectronics is a high-voltage N-channel Power MOSFET in the MDmesh DM6 fast-recovery diode series, designed for high-efficiency bridge topologies and ZVS phase-shift converters. It delivers 600 V V_DS, 60 mΩ typ. R_DS(on) at V_GS = 10 V, 46 A continuous drain current at T_C = 25 °C, and features ultra-low Q_rr (0.58 µC) and fast trr (116 ns) for hard-switching and resonant applications.

For engineers reviewing the STWA65N60DM6 datasheet, STWA65N60DM6 pinout, STWA65N60DM6 application, or STWA65N60DM6 equivalent, key selection criteria include dv/dt ruggedness (100 V/ns), avalanche energy rating (900 mJ), gate charge (65.2 nC), and TO-247 long leads thermal performance (R_thJC = 0.34 °C/W).

Technical Context

This MOSFET employs ST's MDmesh DM6 silicon technology optimized for high-voltage switching with integrated fast-recovery body diode. Its low C_oss (125 pF) and C_oss,eq (204 pF) minimize switching losses in ZVS operation, while intrinsic Zener gate protection ensures robust ESD immunity.

The device supports high di/dt (1000 A/µs) and dv/dt (100 V/ns) during recovery, enabling reliable operation in asymmetric half-bridge and LLC resonant converters. Gate threshold voltage (3.25–4.75 V) and low R_G (1.7 Ω) support clean turn-on with standard gate drivers.

Key Specifications

Pinout & Package

STWA65N60DM6 uses the TO-247 long leads package, optimized for high-current PCB mounting and improved thermal transfer via extended lead length. The package features a metal tab (Drain) on the rear surface, with three through-hole terminals aligned in a linear 1–2–3 configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage fast-recovery MOSFET applications.

Compared with STW65N60DM6, STWA65N60DM6 offers identical electrical specs with enhanced PCB thermal management via long leads; versus IXFH60N60X3, it delivers superior ZVS efficiency and integrated diode simplicity at the cost of slightly lower peak current rating.

Availability

STWA65N60DM6 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, EV onboard chargers, and renewable energy inverters requiring stable component supply and long-term lifecycle assurance.

Supply support for STWA65N60DM6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, specializing in power management, microcontrollers, sensors, and automotive ICs with vertical manufacturing capabilities.

STWA65N60DM6 belongs to the MDmesh DM6 Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in 600 V industrial and renewable energy systems where low Q_rr and avalanche robustness are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The STWA65N60DM6 supports 29 A continuous drain current at T_C = 100 °C, as specified in Table 1 of DS12314 Rev 5. This derating reflects thermal limits of the TO-247 long leads package and ensures safe operation within SOA boundaries at elevated ambient conditions.

Does this MOSFET require an external gate resistor for stability?

A gate resistor of 4.7 Ω is used in the official switching time test circuit (Figure 13), confirming stable turn-on/turn-off behavior without oscillation. Lower values (≤2.2 Ω) may cause ringing due to interaction with L_stray; higher values (>10 Ω) increase switching losses disproportionately.

Can STWA65N60DM6 replace STW65N60DM6 in existing designs?

Yes - STWA65N60DM6 shares identical die, electrical specs, and thermal resistance (R_thJC = 0.34 °C/W), differing only in lead length. Mechanical compatibility must be verified: long leads require deeper PCB holes and may affect creepage/clearance in high-voltage layouts.

Is the body diode suitable for synchronous rectification?

No - the integrated body diode is optimized for fast recovery in high-voltage switching, not low forward voltage. Its V_SD = 1.6 V at 46 A is significantly higher than SiC Schottky diodes (<0.8 V), making it unsuitable for synchronous rectification where conduction loss dominates.