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STMicroelectronics STWA65N65DM2AG
- Part No.:
- STWA65N65DM2AG
- Manufacturer:
- STMicroelectronics
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
STWA65N65DM2AG.pdf
- Description:
- MOSFET N-CH 650V 60A TO247
- Quantity:
- Payment:
- Shipping:
Inventory:536
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Product details
Overview
STWA65N65DM2AG from STMicroelectronics is an AEC-Q101 qualified automotive-grade N-channel 650 V Power MOSFET in TO-247 long leads package, featuring 42 mΩ typ. RDS(on), 60 A continuous drain current at TC = 25 °C, 120 nC total gate charge, and fast-recovery body diode with 154 ns trr at 25 °C - deployed in high-efficiency ZVS phase-shift converters and full-bridge SMPS.
For engineers reviewing the STWA65N65DM2AG datasheet, STWA65N65DM2AG pinout, STWA65N65DM2AG application, or STWA65N65DM2AG equivalent, key selection criteria include dv/dt ruggedness (100 V/ns), avalanche energy rating (1100 mJ), Qrr (0.94 μC), thermal resistance (RthJC = 0.28 °C/W), and Zener-protected gate integrity under transient stress.
Technical Context
This MDmesh DM2-series device uses a superjunction architecture optimized for high-voltage switching with minimized capacitive losses. Its low Ciss (5500 pF) and ultra-low Crss (3 pF) enable clean turn-off and reduced Miller-induced shoot-through risk in hard-switched bridge configurations.
The integrated fast-recovery body diode delivers 154 ns reverse recovery time and 0.94 μC Qrr at 25 °C - critical for minimizing commutation loss in resonant topologies. The 100% avalanche-tested construction supports unclamped inductive switching up to 8 A repetitive IAR with 1100 mJ EAS.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - supports DC bus voltages up to 400 VAC rectified systems with margin for transients |
| RDS(on) max | 50 mΩ - enables <1.8 W conduction loss at 60 A, reducing heatsink requirements |
| Qg | 120 nC - determines gate drive power and switching speed in 100–500 kHz ZVS designs |
| trr | 154 ns @ 25 °C - limits diode recovery loss during synchronous rectification or freewheeling |
| dv/dt ruggedness | 100 V/ns - ensures reliable operation under fast voltage transients without spurious turn-on |
| EAS | 1100 mJ - allows safe energy absorption during unclamped inductive switching events |
| RthJC | 0.28 °C/W - enables high-power dissipation with minimal junction-to-case temperature rise |
Pinout & Package
TO-247 long leads package with isolated tab (D), standard 3-pin configuration: Drain connected to metal tab, Gate at pin 1, Source at pin 3. Mounting requires electrically isolated heatsink interface due to tab-drain connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Tab) | Drain terminal / thermal path | Primary high-side switching node; carries full load current and serves as main thermal conduction path to heatsink |
| G (Pin 1) | Gate control input | Low-impedance MOSFET control node requiring <3.3 Ω intrinsic gate resistance and careful layout to avoid oscillation |
| S (Pin 3) | Source reference / return path | Common source node for gate drive reference and current sensing; must be low-inductance for stable switching |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive powertrain and charging systems per stress test requirements including HTOL, TC, and UHAST |
| Zener-protected gate | ±25 V gate-source rating with integrated Zener clamp prevents gate oxide damage during ESD or overvoltage events |
| Fast-recovery body diode | trr = 154 ns and Qrr = 0.94 μC at 25 °C - reduces dead-time loss and improves efficiency in half/full-bridge freewheeling |
| Extremely low Qg/Ciss | 120 nC Qg and 5500 pF Ciss - lowers gate driver power demand and enables faster switching transitions |
| 100% avalanche tested | Each unit validated for single-pulse EAS = 1100 mJ - guarantees robustness in real-world inductive fault conditions |
Applications
| On-Board Charger (OBC) | DC-DC Bidirectional Converter |
|---|---|
|
Use Scenario: 6.6 kW AC/DC conversion stage in EV on-board chargers using interleaved PFC + LLC topology. IC Role / Device Role / Timing Role: High-side switch in active clamp forward or phase-shifted full-bridge primary side. Use Value: Low Qrr and fast trr minimize body diode conduction loss during zero-voltage switching transitions, improving overall efficiency by ≥0.5%. |
Use Scenario: Isolated bidirectional DC-DC converter in 400 V/48 V automotive architectures for regenerative braking and start-stop support. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier and secondary-side high-side switch in dual-active-bridge (DAB) configuration. Use Value: 100 V/ns dv/dt ruggedness prevents false turn-on during high-slew-rate cross-conduction, ensuring timing reliability in 100–300 kHz DAB operation. |
| Industrial UPS Inverter | Server PSU Primary Switch |
|
Use Scenario: Three-phase inverter stage in 10 kVA online UPS systems with IGBT replacement requirement. IC Role / Device Role / Timing Role: High-voltage leg switch in six-step or space-vector modulated output stage. Use Value: 60 A continuous current rating and 446 W power dissipation capability allow direct substitution of legacy 650 V IGBTs while reducing switching losses by >30%. |
Use Scenario: Primary-side switch in 3 kW server power supply using asymmetric half-bridge (AHB) topology. IC Role / Device Role / Timing Role: Main switching element handling 400 V DC bus with soft-switching control. Use Value: 0.28 °C/W RthJC enables compact thermal design with ≤85 °C junction rise at full load, supporting high-density 1U form factor compliance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW65N65DM2AG | Same die, non-automotive grade; lacks AEC-Q101 qualification and tighter parametric screening | Approved for industrial SMPS only; not suitable for automotive safety-critical systems | Select when cost sensitivity outweighs automotive qualification needs and ambient temperature stays ≤105 °C |
| IPW65R041CFD7XKSA1 | Infineon CoolMOS CFD7; 41 mΩ RDS(on), 135 nC Qg, 130 ns trr, no AEC-Q101 rating | Higher gate charge increases driver loss; lower trr gives marginal diode recovery advantage | Prefer where lower RDS(on) dominates over gate drive efficiency and automotive compliance is not required |
Compared with STW65N65DM2AG and IPW65R041CFD7XKSA1, STWA65N65DM2AG uniquely combines AEC-Q101 qualification, Zener gate protection, and 100 V/ns dv/dt ruggedness - making it the only choice for automotive ZVS converters requiring functional safety alignment and transient immunity.
Availability
STWA65N65DM2AG is available at Aetrix Electronics and suitable for on-board chargers, bidirectional DC-DC converters, and industrial UPS inverters requiring stable component supply, automotive-grade traceability, and long-term lifecycle assurance.
Supply support for STWA65N65DM2AG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and analog ICs for automotive, industrial, and consumer markets.
This part belongs to the MDmesh DM2 family - engineered specifically for high-efficiency, high-frequency switching power supplies in automotive and industrial applications where low Qrr, rugged dv/dt behavior, and avalanche reliability are mandatory.
FAQ
Is STWA65N65DM2AG pin-compatible with STW65N65DM2AG?
Yes - both share identical TO-247 long leads mechanical footprint and pinout (D-tab, G-pin1, S-pin3). However, STWA65N65DM2AG undergoes additional AEC-Q101 stress testing and tighter parameter screening, particularly for VGS(th) spread and RDS(on) consistency across temperature.
What is the maximum recommended gate resistor value for hard-switched operation?
For 100–300 kHz hard-switched bridge operation, RG ≤ 10 Ω is recommended to ensure 120 nC Qg is fully charged within 300 ns. Higher values increase switching loss and risk incomplete turn-on; values below 4.7 Ω require gate driver capable of ≥2 A peak current.
Does the body diode support synchronous rectification in LLC resonant converters?
No - while the body diode has fast trr (154 ns) and low Qrr, its VSD = 1.6 V at 60 A creates higher conduction loss than discrete Schottky or SiC diodes. It is intended for freewheeling and clamping, not sustained synchronous rectification duty.
Can STWA65N65DM2AG replace IGBTs in motor drive inverters?
Yes - in 650 V, ≤20 kHz motor drives with <60 A RMS current, its low RDS(on) and 100% avalanche rating provide superior efficiency and fault tolerance versus comparable IGBTs. However, gate drive complexity increases due to higher Qg and need for negative turn-off bias.
STWA65N65DM2AG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- MDmesh™ DM2
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 120 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5500 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 446W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247 Long Leads
STWA65N65DM2AG FAQ
1.How can I place an order for STWA65N65DM2AG through Aetrix?
Please submit a Request for Quotation (RFQ) for STWA65N65DM2AG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for STWA65N65DM2AG reliable?
The price and inventory of STWA65N65DM2AG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for STWA65N65DM2AG is usually 5 days.
3.What payment methods are accepted for STWA65N65DM2AG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for STWA65N65DM2AG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for STWA65N65DM2AG?
STWA65N65DM2AG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your STWA65N65DM2AG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for STWA65N65DM2AG?
For technical support, including STWA65N65DM2AG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your STWA65N65DM2AG requirements.
6.How does Aetrix verify that STWA65N65DM2AG is sourced from the original manufacturer or authorized distributors?
All STWA65N65DM2AG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that STWA65N65DM2AG meets industry standards.
7.What is the process for return or replacement of STWA65N65DM2AG?
All STWA65N65DM2AG units undergo pre-shipment inspection (PSI). If there is an issue with STWA65N65DM2AG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The STWA65N65DM2AG part is unused and in its original packaging.
Return procedure for STWA65N65DM2AG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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